SE306578B - - Google Patents

Info

Publication number
SE306578B
SE306578B SE558365A SE558365A SE306578B SE 306578 B SE306578 B SE 306578B SE 558365 A SE558365 A SE 558365A SE 558365 A SE558365 A SE 558365A SE 306578 B SE306578 B SE 306578B
Authority
SE
Sweden
Application number
SE558365A
Inventor
O Jaentsch
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE306578B publication Critical patent/SE306578B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
SE558365A 1964-04-29 1965-04-28 SE306578B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0090833 1964-04-29

Publications (1)

Publication Number Publication Date
SE306578B true SE306578B (en) 1968-12-02

Family

ID=7516107

Family Applications (1)

Application Number Title Priority Date Filing Date
SE558365A SE306578B (en) 1964-04-29 1965-04-28

Country Status (8)

Country Link
AT (1) AT249174B (en)
BE (1) BE662714A (en)
CH (1) CH437537A (en)
DE (1) DE1439368A1 (en)
FR (1) FR1433766A (en)
GB (1) GB1094336A (en)
NL (1) NL6505357A (en)
SE (1) SE306578B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
DE2835089A1 (en) * 1978-08-10 1980-03-20 Siemens Ag THYRISTOR
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
US4611235A (en) * 1984-06-04 1986-09-09 General Motors Corporation Thyristor with turn-off FET
DE10107142A1 (en) * 2001-02-15 2002-11-14 Infineon Technologies Ag Production of a chip-like semiconductor component used as a FET chip comprises using chip side edges for contacting an electrode of the component

Also Published As

Publication number Publication date
CH437537A (en) 1967-06-15
FR1433766A (en) 1966-04-01
NL6505357A (en) 1965-11-01
DE1439368A1 (en) 1969-02-13
BE662714A (en) 1965-08-17
GB1094336A (en) 1967-12-06
AT249174B (en) 1966-09-12

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