GB985995A - A semiconductor arrangement - Google Patents

A semiconductor arrangement

Info

Publication number
GB985995A
GB985995A GB2807861A GB2807861A GB985995A GB 985995 A GB985995 A GB 985995A GB 2807861 A GB2807861 A GB 2807861A GB 2807861 A GB2807861 A GB 2807861A GB 985995 A GB985995 A GB 985995A
Authority
GB
United Kingdom
Prior art keywords
alloyed
zone
region
type
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2807861A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Publication of GB985995A publication Critical patent/GB985995A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

985,995. Semi-conductor devices. TELEFUNKEN PATENTVERWERTUNGSG.m.b.H. Aug. 2, 1961 [Aug. 5, 1960], No. 28078/61. Heading H1K. In order to facilitate the attachment of electrodes to a high-frequency transistor the device is made from a PN wafer, a P (or N) region being alloyed into the P (or N) zone of the wafer and a boundary of N (or P) type being formed beyond the alloyed region by post alloy diffusion. As shown in Fig. 2 a wafer of P type germanium about 40 Á thick is diffused with arsenic to provide an N type zone 2 and a residual P type zone 1 into which a leadgallium and arsenic pellet, about 200 Á across, is alloyed to form a P type emitter region 3. By diffusing the arsenic out of the alloy a base region 4 about 2 to 3 Á thick is formed. An emitter electrode is alloyed on to the region 3 and an annular collector electrode is alloyed on to the zone 1. The base zone 2 is etched to provide a mesa portion into which the base electrode is alloyed.
GB2807861A 1960-08-05 1961-08-02 A semiconductor arrangement Expired GB985995A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET18794A DE1132251B (en) 1960-08-05 1960-08-05 Method of manufacturing an area transistor

Publications (1)

Publication Number Publication Date
GB985995A true GB985995A (en) 1965-03-17

Family

ID=7549080

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2807861A Expired GB985995A (en) 1960-08-05 1961-08-02 A semiconductor arrangement

Country Status (2)

Country Link
DE (1) DE1132251B (en)
GB (1) GB985995A (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2764642A (en) * 1952-10-31 1956-09-25 Bell Telephone Labor Inc Semiconductor signal translating devices
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions
US2787564A (en) * 1954-10-28 1957-04-02 Bell Telephone Labor Inc Forming semiconductive devices by ionic bombardment
DE1027323B (en) * 1954-12-02 1958-04-03 Siemens Ag Surface transistor and method of manufacture
GB864771A (en) * 1956-11-23 1961-04-06 Pye Ltd Improvements in or relating to junction transistors
DE1063279B (en) * 1957-05-31 1959-08-13 Ibm Deutschland Semiconductor arrangement made up of a semiconductor body with a flat inner pn transition and with more than three electrodes

Also Published As

Publication number Publication date
DE1132251B (en) 1962-06-28

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