GB864771A - Improvements in or relating to junction transistors - Google Patents

Improvements in or relating to junction transistors

Info

Publication number
GB864771A
GB864771A GB3590556A GB3590556A GB864771A GB 864771 A GB864771 A GB 864771A GB 3590556 A GB3590556 A GB 3590556A GB 3590556 A GB3590556 A GB 3590556A GB 864771 A GB864771 A GB 864771A
Authority
GB
United Kingdom
Prior art keywords
melt
emitter
collector
conductivity type
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3590556A
Inventor
George Roman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pye Electronic Products Ltd
Original Assignee
Pye Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pye Ltd filed Critical Pye Ltd
Priority to GB3590556A priority Critical patent/GB864771A/en
Priority to FR1186637D priority patent/FR1186637A/en
Publication of GB864771A publication Critical patent/GB864771A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

864,771. Semi-conductor devices. PYE Ltd. Nov. 18, 1957 [Nov. 23, 1956], No. 35905/56. Class 37. A method of making a junction transistor comprises dipping an acceptor or donor doped body later to form the emitter or collector zone, first in a melt of opposite conductivity type to form a base zone and then in a melt of the same conductivity type to form the collector or emitter zone. In one embodiment a rectangular slab 1 (Fig. 1) of N-type germanium is cut from a monocrystalline rod and after etching is dipped into a melt of acceptor doped semi-conductor which is allowed to crystallize on to the body to form a P-type layer 2. The composite body is then withdrawn from the melt and allowed to grow further from a second donor doped melt to form an N-type layer 3a. A transistor is made from the resulting body by grinding off the lower end of the layer 3a to expose layer 2, and making emitter, base and collector connections to the regions 1, 2, 3 as shown. In an alternative method the composite body is only shallowly dipped into the second melt to form a body as shown in Fig. 2 to which emitter, base and collector connections are made as shown. Each of the regions of different conductivity type may be made of graded conductivity by forming it in several stages by successively dipping into melts which crystallize to form subregions having the same conductivity type but different values of conductivity.
GB3590556A 1956-11-23 1956-11-23 Improvements in or relating to junction transistors Expired GB864771A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB3590556A GB864771A (en) 1956-11-23 1956-11-23 Improvements in or relating to junction transistors
FR1186637D FR1186637A (en) 1956-11-23 1957-11-21 Semiconductor device enhancements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3590556A GB864771A (en) 1956-11-23 1956-11-23 Improvements in or relating to junction transistors

Publications (1)

Publication Number Publication Date
GB864771A true GB864771A (en) 1961-04-06

Family

ID=10382846

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3590556A Expired GB864771A (en) 1956-11-23 1956-11-23 Improvements in or relating to junction transistors

Country Status (2)

Country Link
FR (1) FR1186637A (en)
GB (1) GB864771A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL254896A (en) * 1959-08-29
NL256342A (en) * 1959-09-29
DE1132251B (en) * 1960-08-05 1962-06-28 Telefunken Patent Method of manufacturing an area transistor

Also Published As

Publication number Publication date
FR1186637A (en) 1959-08-28

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