GB936812A - Improvements in or relating to transistors - Google Patents

Improvements in or relating to transistors

Info

Publication number
GB936812A
GB936812A GB4195960A GB4195960A GB936812A GB 936812 A GB936812 A GB 936812A GB 4195960 A GB4195960 A GB 4195960A GB 4195960 A GB4195960 A GB 4195960A GB 936812 A GB936812 A GB 936812A
Authority
GB
United Kingdom
Prior art keywords
junction
electrode
collector
base
dec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4195960A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB936812A publication Critical patent/GB936812A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/0422—Anti-saturation measures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

936,812. Transistors. SIEMENS & HALSKE A.G. Dec. 6, 1960 [Dec. 7, 1959], No. 41959/60. Class 37. In a junction transistor comprising an additional electrode which forms a rectifying junction with the base zone at a distance from the emitter junction greater than the emittercollector spacing the electrode is connected directly with the collector electrode. The rectifying junction, poled in the same sense as the collector junction prevents the transistor from being driven into saturation. In an example, Fig. 2, the N-type. base zone is a disc mounted on an annular base contact M, and the additional junction A is formed opposite the contact at the edge of the disc. The device is mounted in a housing through which the emitter, base and collector leads extend.
GB4195960A 1959-12-07 1960-12-06 Improvements in or relating to transistors Expired GB936812A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES66142A DE1188732B (en) 1959-12-07 1959-12-07 Transistor, in particular for use as a switch

Publications (1)

Publication Number Publication Date
GB936812A true GB936812A (en) 1963-09-11

Family

ID=7498582

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4195960A Expired GB936812A (en) 1959-12-07 1960-12-06 Improvements in or relating to transistors

Country Status (4)

Country Link
CH (1) CH384723A (en)
DE (1) DE1188732B (en)
GB (1) GB936812A (en)
NL (1) NL258753A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571674A (en) * 1969-01-10 1971-03-23 Fairchild Camera Instr Co Fast switching pnp transistor
FR2234469A1 (en) * 1973-06-22 1975-01-17 Lucas Electrical Co Ltd

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE863372C (en) * 1944-09-30 1953-01-15 Siemens Ag Crystal detector for voltage measurement or demodulation of electrical waves
DE851228C (en) * 1950-12-08 1952-10-02 Schaub Appbau Ges M B H G Mounted rectifier
US2655608A (en) * 1952-07-22 1953-10-13 Bell Telephone Labor Inc Semiconductor circuit controlling device
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
US2872594A (en) * 1953-12-31 1959-02-03 Ibm Large signal transistor circuits having short "fall" time
US2846592A (en) * 1955-05-20 1958-08-05 Ibm Temperature compensated semiconductor devices
DE1048358B (en) * 1955-08-12 1959-01-08
DE1049912B (en) * 1956-06-08 1959-02-05
DE1786107U (en) * 1956-09-25 1959-04-02 Siemens Ag POWER TRANSISTOR.
BE567246A (en) * 1957-05-01

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571674A (en) * 1969-01-10 1971-03-23 Fairchild Camera Instr Co Fast switching pnp transistor
FR2234469A1 (en) * 1973-06-22 1975-01-17 Lucas Electrical Co Ltd

Also Published As

Publication number Publication date
NL258753A (en)
DE1188732B (en) 1965-03-11
CH384723A (en) 1965-02-26

Similar Documents

Publication Publication Date Title
GB1529498A (en) Transistor having integrated protection
GB1397086A (en) Semiconductor device having darlington circuit
GB936812A (en) Improvements in or relating to transistors
GB1333411A (en) Semi-conductor devices
NL130600C (en)
JPS5261975A (en) Semiconductor device
GB1182447A (en) Semiconductor Element with Transverse-Field Emitter
GB878265A (en) A transistor
GB1117915A (en) Improvements in or relating to the manufacture of semiconductor bodies
GB982019A (en) A comparison circuit for comparing a varying potential with a reference potential
GB952985A (en) Improvements in or relating to semi-conductor devices
JPS53108778A (en) Transistor
FR1454806A (en) Transistor
GB983623A (en) Improvements relating to semi-conductor devices
GB985995A (en) A semiconductor arrangement
GB1284015A (en) Improvements in or relating to transistors
JPS52133761A (en) Integrated circuit
GB851751A (en) Improvements in and relating to the construction of semi-conductor diodes
JPS538580A (en) Semiconductor device
JPS5365076A (en) Semiconductor device
ES468941A1 (en) Monolithic integrated semiconductor diode arrangement
GB865368A (en) Improvements in or relating to transistors
GB907942A (en) Improvements in or relating to transistors
GB1065741A (en) Improvements in or relating to semiconductor devices
JPS5265679A (en) Semiconductor device