GB878265A - A transistor - Google Patents

A transistor

Info

Publication number
GB878265A
GB878265A GB3825759A GB3825759A GB878265A GB 878265 A GB878265 A GB 878265A GB 3825759 A GB3825759 A GB 3825759A GB 3825759 A GB3825759 A GB 3825759A GB 878265 A GB878265 A GB 878265A
Authority
GB
United Kingdom
Prior art keywords
emitter
base
nov
transistor
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3825759A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB878265A publication Critical patent/GB878265A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

878,265. Transistors. LICENTIA PATENTVERWALTUNGS-G.m.b.H. Nov. 11, 1959 [Nov. 12, 1958], No. 38257/59. Class 37. In a transistor where E, Fig. 1, is the emitter, K the collector, B the base, 2 a PP + or NN + junction and 3 and 4 are PN junctions, the dimensions a, band c shown have the following relationship : a # b # c. The emitter and base electrodes may be annular and an additional base electrode may be provided within an annular emitter. In Fig. 5 where the collector K and the base electrodes B, B<1> overlap, E being the emitting electrode, then a # b # c<1>. In Fig. 6 where the surface contacted by the emitter E and base B is stepped or bevelled, a = b = c.
GB3825759A 1958-11-12 1959-11-11 A transistor Expired GB878265A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL31695A DE1105522B (en) 1958-11-12 1958-11-12 Transistor with a disk-shaped semiconductor body

Publications (1)

Publication Number Publication Date
GB878265A true GB878265A (en) 1961-09-27

Family

ID=7265655

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3825759A Expired GB878265A (en) 1958-11-12 1959-11-11 A transistor

Country Status (2)

Country Link
DE (1) DE1105522B (en)
GB (1) GB878265A (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1103544A (en) * 1953-05-25 1955-11-03 Rca Corp Semiconductor devices, and method of making same
BE530566A (en) * 1953-07-22
BE531626A (en) * 1953-09-04
BE539938A (en) * 1954-07-21
US3081421A (en) * 1954-08-17 1963-03-12 Gen Motors Corp Unipolar transistor
FR1162015A (en) * 1955-12-08 1958-09-08 Philips Nv Transistron
NL216645A (en) * 1956-04-26

Also Published As

Publication number Publication date
DE1105522B (en) 1961-04-27

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