GB761926A - Self-powered semiconductive devices - Google Patents

Self-powered semiconductive devices

Info

Publication number
GB761926A
GB761926A GB20073/54A GB2007354A GB761926A GB 761926 A GB761926 A GB 761926A GB 20073/54 A GB20073/54 A GB 20073/54A GB 2007354 A GB2007354 A GB 2007354A GB 761926 A GB761926 A GB 761926A
Authority
GB
United Kingdom
Prior art keywords
zones
junction
transistor
alloy
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20073/54A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB761926A publication Critical patent/GB761926A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Abstract

761,926. Semi-conductor devices. RADIO CORPORATION OF AMERICA. July 8, 1954 [Aug. 3, 1953], No. 20073/54. Addition to 761,404. Class 37. An electrical device comprises a semiconductor body which constitutes both a utilisation device such as a transistor, and a voltage generator provided by the action of a nuclear source of energy on the body, as claimed in the parent Specification. Fig. 1 shows a grown junction semi-conductor body consisting of PNPN zones 11, 13, 15 and 17 respectively. Zones 11, 13 and 15 constitute PNP transistor. Zones 15 and 17 provide a PN junction which is surrounded with nuclear emissive material 19 to provide a potential between zones 17 and 15, as described in the parent Specification, which is used to bias the transistor portion by means of voltage divider 23. Fig. 2 shows a modification in which alloy junction electrodes 27 and 29 are used to form the transistor, and alloy junctions 35 and 37 are used for the voltage generator portion. To provide the desired polarity, junction 35 is an NP junction provided by selecting the alloy impurity so as to effect conversion of conductivity type, while junction 37 is provided by selecting impurity characteristic of the same conductivity type as the base zone 25, to provide a region of increased conductivity. Both zones are surrounded by the emissive material 19 so that, with an N-type region 25 a positive potential appears at zone 35, and a negative potential at zone 37, which provide the potentials for biasing emitter and collector zones 27 and 27. Point contacts may be used for the emitter and collector electrodes in place of the PN junctions.
GB20073/54A 1953-08-03 1954-07-08 Self-powered semiconductive devices Expired GB761926A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US761926XA 1953-08-03 1953-08-03

Publications (1)

Publication Number Publication Date
GB761926A true GB761926A (en) 1956-11-21

Family

ID=22130499

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20073/54A Expired GB761926A (en) 1953-08-03 1954-07-08 Self-powered semiconductive devices

Country Status (2)

Country Link
BE (1) BE530809A (en)
GB (1) GB761926A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit
DE1196298B (en) * 1959-02-06 1965-07-08 Texas Instruments Inc Method for producing a microminiaturized, integrated semiconductor circuit arrangement
DE1207511B (en) * 1959-05-06 1965-12-23 Texas Instruments Inc Semiconductor integrated circuit arrangement and method for making same
FR2629639A1 (en) * 1988-04-01 1989-10-06 Balkanski Minko Self-powered integrated component of the junction type and method for its manufacture
EP0637037A1 (en) * 1993-07-30 1995-02-01 Texas Instruments Incorporated Radioisotope power cells

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit
DE1196296B (en) * 1959-02-06 1965-07-08 Texas Instruments Inc Microminiaturized semiconductor integrated circuit device and method for making it
DE1196299B (en) * 1959-02-06 1965-07-08 Texas Instruments Inc Microminiaturized semiconductor integrated circuit arrangement and method for making same
DE1196300B (en) * 1959-02-06 1965-07-08 Texas Instruments Inc Microminiaturized, integrated semiconductor circuitry
DE1196295B (en) * 1959-02-06 1965-07-08 Texas Instruments Inc Microminiaturized, integrated semiconductor circuit arrangement
DE1196301B (en) * 1959-02-06 1965-07-08 Texas Instruments Inc Process for the production of microminiaturized, integrated semiconductor devices
DE1196298B (en) * 1959-02-06 1965-07-08 Texas Instruments Inc Method for producing a microminiaturized, integrated semiconductor circuit arrangement
DE1196297B (en) * 1959-02-06 1965-07-08 Texas Instruments Inc Microminiaturized semiconductor integrated circuit arrangement and method for making same
DE1196297C2 (en) * 1959-02-06 1974-01-17 Texas Instruments Inc Microminiaturized semiconductor integrated circuit arrangement and method for making same
DE1196299C2 (en) * 1959-02-06 1974-03-07 Texas Instruments Inc MICROMINIATURIZED INTEGRATED SEMI-CONDUCTOR CIRCUIT ARRANGEMENT AND METHOD FOR MANUFACTURING IT
DE1207511B (en) * 1959-05-06 1965-12-23 Texas Instruments Inc Semiconductor integrated circuit arrangement and method for making same
FR2629639A1 (en) * 1988-04-01 1989-10-06 Balkanski Minko Self-powered integrated component of the junction type and method for its manufacture
EP0637037A1 (en) * 1993-07-30 1995-02-01 Texas Instruments Incorporated Radioisotope power cells

Also Published As

Publication number Publication date
BE530809A (en)

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