GB939842A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB939842A
GB939842A GB3169361A GB3169361A GB939842A GB 939842 A GB939842 A GB 939842A GB 3169361 A GB3169361 A GB 3169361A GB 3169361 A GB3169361 A GB 3169361A GB 939842 A GB939842 A GB 939842A
Authority
GB
United Kingdom
Prior art keywords
semi
characteristic
conductivity type
zone
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3169361A
Inventor
George Roman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pye Electronic Products Ltd
Original Assignee
Pye Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pye Ltd filed Critical Pye Ltd
Priority to GB3169361A priority Critical patent/GB939842A/en
Priority claimed from GB4172458A external-priority patent/GB939841A/en
Publication of GB939842A publication Critical patent/GB939842A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

939,842. Semi-conductor devices. PYE Ltd. Dec. 23, 1959 [Dec. 24, 1958], No. 31693/61. Divided out of 939,841. Class 37. A semi-conductor device consists of a piece 1 of semi-conductor material containing an impurity, characteristic of one conductivity type, e.g. N type germanium, and having exposed at a surface thereof a dish-shaped recrystallized zone 3 consisting of a mixture of the semi-conductor material and a metallic impurity, e.g. indium, characteristic of the opposite conductivity type, and an electrode 2a of a metallic impurity, e.g. indium, characteristic of said opposite conductivity type positioned in the centre of the re-crystallized zone 3 and extending over an area substantially smaller than that of the exposed surface of the re-crystallized zone. A junction transistor can be made having a re-crystallized zone and an electrode, formed as above, on opposite surfaces of the piece of semi-conductor material and forming the emitter and collector. The device can be made by the method described in Specification 939,841.
GB3169361A 1958-12-24 1958-12-24 Semiconductor device Expired GB939842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3169361A GB939842A (en) 1958-12-24 1958-12-24 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4172458A GB939841A (en) 1958-12-24 1958-12-24 Method of producing junction regions in semiconductor materials
GB3169361A GB939842A (en) 1958-12-24 1958-12-24 Semiconductor device

Publications (1)

Publication Number Publication Date
GB939842A true GB939842A (en) 1963-10-16

Family

ID=26261045

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3169361A Expired GB939842A (en) 1958-12-24 1958-12-24 Semiconductor device

Country Status (1)

Country Link
GB (1) GB939842A (en)

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