GB916379A - Improvements in and relating to semiconductor junction units - Google Patents

Improvements in and relating to semiconductor junction units

Info

Publication number
GB916379A
GB916379A GB18139/60A GB1813960A GB916379A GB 916379 A GB916379 A GB 916379A GB 18139/60 A GB18139/60 A GB 18139/60A GB 1813960 A GB1813960 A GB 1813960A GB 916379 A GB916379 A GB 916379A
Authority
GB
United Kingdom
Prior art keywords
relating
semiconductor junction
semi
conductivity type
junction units
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB18139/60A
Inventor
Kenneth Arthur Maddex
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB18139/60A priority Critical patent/GB916379A/en
Priority to DEA37372A priority patent/DE1174129B/en
Priority to FR862557A priority patent/FR1289397A/en
Publication of GB916379A publication Critical patent/GB916379A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

916,379. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. March 21, 1961 [May 23, 1960], No. 18139/60. Class 37. A PN junction is formed with a semi-conductor body 2 (Fig. 2) of one conductivity type by evaporating a doping material characteristic of the opposite conductivity type through an inert mask 4 (Fig. 2) with a chamfered inner edge to form a layer 1 with a central region of uniform thickness and chamfered edges and subsequently alloying or diffusing the doping material into the body.
GB18139/60A 1960-05-23 1960-05-23 Improvements in and relating to semiconductor junction units Expired GB916379A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB18139/60A GB916379A (en) 1960-05-23 1960-05-23 Improvements in and relating to semiconductor junction units
DEA37372A DE1174129B (en) 1960-05-23 1961-05-06 Method for producing a pn junction by applying an activator layer on a surface of a semiconductor body and then alloying and / or diffusing
FR862557A FR1289397A (en) 1960-05-23 1961-05-23 Method for increasing the reverse voltage withstood by a semiconductor body junction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB18139/60A GB916379A (en) 1960-05-23 1960-05-23 Improvements in and relating to semiconductor junction units

Publications (1)

Publication Number Publication Date
GB916379A true GB916379A (en) 1963-01-23

Family

ID=10107314

Family Applications (1)

Application Number Title Priority Date Filing Date
GB18139/60A Expired GB916379A (en) 1960-05-23 1960-05-23 Improvements in and relating to semiconductor junction units

Country Status (3)

Country Link
DE (1) DE1174129B (en)
FR (1) FR1289397A (en)
GB (1) GB916379A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1041220A (en) * 1962-08-31 1966-09-01 Ass Elect Ind Improvements in semi-conductor devices
FR2129814B1 (en) * 1971-03-15 1976-04-16 Commissariat Energie Atomique
US4416759A (en) * 1981-11-27 1983-11-22 Varian Associates, Inc. Sputter system incorporating an improved blocking shield for contouring the thickness of sputter coated layers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2395743A (en) * 1942-12-22 1946-02-26 Bell Telephone Labor Inc Method of making dry rectifiers
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
DE1054802B (en) * 1956-03-05 1959-04-09 Westinghouse Electric Corp Process for the evaporation of substances, in particular for the creation of the transition zones (junctions) of transistors
NL235480A (en) * 1956-05-15

Also Published As

Publication number Publication date
DE1174129B (en) 1964-07-16
FR1289397A (en) 1962-03-30

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