GB1208030A - A semiconductor device - Google Patents

A semiconductor device

Info

Publication number
GB1208030A
GB1208030A GB4882069A GB4882069A GB1208030A GB 1208030 A GB1208030 A GB 1208030A GB 4882069 A GB4882069 A GB 4882069A GB 4882069 A GB4882069 A GB 4882069A GB 1208030 A GB1208030 A GB 1208030A
Authority
GB
United Kingdom
Prior art keywords
june
semi
conductivity type
semiconductor device
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4882069A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1208030A publication Critical patent/GB1208030A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,208,030. Semi-conductor devices. HITACHI Ltd. 24 June, 1968 [28 June, 1967], No. 48820/69. Divided out of 1,208,029. Heading H1K. The description is identical to that of Specification 1,208,029, but the claims are directed to a semi-conductor device in which an ohmic contact to a region of one conductivity type is provided by a diffused region of the same conductivity type but having an impurity concentration of at least 10<SP>20</SP> cm.<SP>-3</SP> which is contacted by the metal electrode through an aperture in an insulating film comprising a layer of glass sandwiched between two other layers of insulating material.
GB4882069A 1967-06-28 1968-06-24 A semiconductor device Expired GB1208030A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4098067 1967-06-28

Publications (1)

Publication Number Publication Date
GB1208030A true GB1208030A (en) 1970-10-07

Family

ID=12595565

Family Applications (2)

Application Number Title Priority Date Filing Date
GB3001268A Expired GB1208029A (en) 1967-06-28 1968-06-24 Method for manufacturing a semiconductor device
GB4882069A Expired GB1208030A (en) 1967-06-28 1968-06-24 A semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB3001268A Expired GB1208029A (en) 1967-06-28 1968-06-24 Method for manufacturing a semiconductor device

Country Status (2)

Country Link
FR (1) FR1571170A (en)
GB (2) GB1208029A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0391562A2 (en) * 1989-04-07 1990-10-10 STMicroelectronics Limited Semiconductor devices incorporating a tungsten contact and fabrication thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764824A1 (en) * 1968-08-13 1971-11-04 Siemens Ag Field effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0391562A2 (en) * 1989-04-07 1990-10-10 STMicroelectronics Limited Semiconductor devices incorporating a tungsten contact and fabrication thereof
EP0391562A3 (en) * 1989-04-07 1991-03-13 STMicroelectronics Limited Semiconductor devices incorporating a tungsten contact and fabrication thereof
US5422308A (en) * 1989-04-07 1995-06-06 Inmos Limited Method of fabricating a tungsten contact
US6034419A (en) * 1989-04-07 2000-03-07 Inmos Limited Semiconductor device with a tungsten contact
US6614098B1 (en) 1989-04-07 2003-09-02 Inmos Limited Semiconductor devices and fabrication thereof

Also Published As

Publication number Publication date
GB1208029A (en) 1970-10-07
FR1571170A (en) 1969-06-13

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee