ES226670A1 - A semiconductor switching device (Machine-translation by Google Translate, not legally binding) - Google Patents

A semiconductor switching device (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES226670A1
ES226670A1 ES0226670A ES226670A ES226670A1 ES 226670 A1 ES226670 A1 ES 226670A1 ES 0226670 A ES0226670 A ES 0226670A ES 226670 A ES226670 A ES 226670A ES 226670 A1 ES226670 A1 ES 226670A1
Authority
ES
Spain
Prior art keywords
semiconductive
translation
machine
legally binding
google translate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0226670A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES226670A1 publication Critical patent/ES226670A1/en
Expired legal-status Critical Current

Links

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  • Manufacturing Of Electrical Connectors (AREA)
  • Thermistors And Varistors (AREA)

Abstract

Switching semiconductor apparatus, comprising a body of semiconductive material, a pair of electrical connections to this body and at least one rectifying barrier zone enclosing a portion of the body comprised between those conditions, a body of ferroelectric material adjacent to the semiconductive material together with the barrier rectifying zone and an electrode separated from the semiconductive body and mounted on the ferroelectric body, the barrier zone being defined by a surface layer located on the semiconductive body and of the conductivity type opposite to that of the main body portion, characterized in that the the ferroelectric body is located adjacent to the surface portion of the semiconductive body and substantially parallel to the region or barrier zone. (Machine-translation by Google Translate, not legally binding)
ES0226670A 1955-02-18 1956-02-07 A semiconductor switching device (Machine-translation by Google Translate, not legally binding) Expired ES226670A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US226670TA 1955-02-18 1955-02-18

Publications (1)

Publication Number Publication Date
ES226670A1 true ES226670A1 (en) 1956-04-01

Family

ID=38724404

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0226670A Expired ES226670A1 (en) 1955-02-18 1956-02-07 A semiconductor switching device (Machine-translation by Google Translate, not legally binding)

Country Status (1)

Country Link
ES (1) ES226670A1 (en)

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