GB710245A - Contact device - Google Patents
Contact deviceInfo
- Publication number
- GB710245A GB710245A GB24457/52A GB2445752A GB710245A GB 710245 A GB710245 A GB 710245A GB 24457/52 A GB24457/52 A GB 24457/52A GB 2445752 A GB2445752 A GB 2445752A GB 710245 A GB710245 A GB 710245A
- Authority
- GB
- United Kingdom
- Prior art keywords
- grid
- layer
- crystal
- germanium
- conducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 abstract 7
- 229910052732 germanium Inorganic materials 0.000 abstract 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- 239000010937 tungsten Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
710,245. Semiconductor devices: ROBILLARD, J. J. A. Sept. 30, 1952, [Jan. 8, 1952.] No. 24457/52. Class 37. A contact arrangement for transistors or crystal rectifiers comprises a conducting layer which is evaporated on the surface of the crystal through the spaces in a fine-meshed conducting grid placed on the crystal surface, the layer being insulated from the grid, so as to provide a number of point contacts connected in parallel. The grid may be of copper, and of the type used for electrotypes, with approximately 20 meshes per mm<SP>2</SP>. Fig. 3 shows a rectifier construction, in which a germanium crystal 1 on a base electrode 5, has on its surface, a grid 2 having a thin insulating layer 3. The layer 3 may be provided by evaporating silicon dioxide on to the grid. The conducting layer 4 may be provided by evaporating tungsten by means of electrically heated wires placed close to the grid. The parts of the layer 4 in each of the meshes of the grid provide substantially point contacts on the germanium. The layer of insulation between the grid 3 and the germanium may be omitted, so that the grid contacts the surface,whereby each mesh of the grid co-operates with the contact point of the layer 4 to enable transitor effect to be obtained. Fig. 4 shows a transistor comprising a germanium crystal t, and base electrode 5 in a plastic envelope 6. The grid 2, covered with insulation except for the under surface as described, is held against the crystal surface by plastic ring 7. A tungsten layer 4 is evaporated on to the grid and crystal, and on to contact piece 8. Aperture 12 may be sealed with plastic material.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE307776X | 1952-01-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB710245A true GB710245A (en) | 1954-06-09 |
Family
ID=20307567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB24457/52A Expired GB710245A (en) | 1952-01-08 | 1952-09-30 | Contact device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US2758263A (en) |
| CH (1) | CH307776A (en) |
| GB (1) | GB710245A (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2883592A (en) * | 1955-12-30 | 1959-04-21 | Gen Electric | Encapsulated selenium rectifiers |
| NL255454A (en) * | 1960-02-09 | |||
| US3204159A (en) * | 1960-09-14 | 1965-08-31 | Bramley Jenny | Rectifying majority carrier device |
| NL264072A (en) * | 1960-11-21 | 1900-01-01 | ||
| FR1317256A (en) * | 1961-12-16 | 1963-02-08 | Teszner Stanislas | Improvements to semiconductor devices known as multibrand tecnetrons |
| BE633151A (en) * | 1962-06-01 | |||
| US3273029A (en) * | 1963-08-23 | 1966-09-13 | Hoffman Electronics Corp | Method of attaching leads to a semiconductor body and the article formed thereby |
| US3312879A (en) * | 1964-07-29 | 1967-04-04 | North American Aviation Inc | Semiconductor structure including opposite conductivity segments |
| US3448352A (en) * | 1966-07-26 | 1969-06-03 | Westinghouse Electric Corp | Multiple electrical contact assembly for compression bonded electrical devices |
| US3577042A (en) * | 1967-06-19 | 1971-05-04 | Int Rectifier Corp | Gate connection for controlled rectifiers |
| US4329701A (en) * | 1978-03-20 | 1982-05-11 | The Trane Company | Semiconductor package |
| US5057903A (en) * | 1989-07-17 | 1991-10-15 | Microelectronics And Computer Technology Corporation | Thermal heat sink encapsulated integrated circuit |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2386218A (en) * | 1945-10-09 | Rectifier electrode connection | ||
| US2046686A (en) * | 1934-05-22 | 1936-07-07 | Bell Telephone Labor Inc | Asymmetrical electrical conductor |
| GB500342A (en) * | 1937-09-18 | 1939-02-07 | British Thomson Houston Co Ltd | Improvements relating to dry surface-contact electric rectifiers |
| GB500344A (en) * | 1937-09-22 | 1939-02-07 | British Thomson Houston Co Ltd | Improvements in and relating to dry surface-contact electric rectifiers |
| GB500180A (en) * | 1937-09-23 | 1939-02-03 | British Thomson Houston Co Ltd | Improvements in and relating to dry surface contact electric rectifiers |
| GB529754A (en) * | 1939-06-07 | 1940-11-27 | Henriette Rupp | Method for controlling and amplifying electric currents by the use of asymmetricallyconducting layers |
| US2345122A (en) * | 1939-10-17 | 1944-03-28 | Herrmann Heinrich | Dry rectifier |
| US2444385A (en) * | 1945-07-06 | 1948-06-29 | Union Switch & Signal Co | Alternating electric current rectifier |
| US2595052A (en) * | 1948-07-23 | 1952-04-29 | Sylvania Electric Prod | Crystal amplifier |
-
1952
- 1952-09-26 CH CH307776D patent/CH307776A/en unknown
- 1952-09-30 GB GB24457/52A patent/GB710245A/en not_active Expired
- 1952-10-03 US US313025A patent/US2758263A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CH307776A (en) | 1955-06-15 |
| US2758263A (en) | 1956-08-07 |
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