US2345122A - Dry rectifier - Google Patents
Dry rectifier Download PDFInfo
- Publication number
- US2345122A US2345122A US362462A US36246240A US2345122A US 2345122 A US2345122 A US 2345122A US 362462 A US362462 A US 362462A US 36246240 A US36246240 A US 36246240A US 2345122 A US2345122 A US 2345122A
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- US
- United States
- Prior art keywords
- layer
- selenium
- lacquer coating
- insulating
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/073—Apertured devices mounted on one or more rods passed through the apertures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
March 28, 1944. H. HERRMANN DRY RECTIFIER Filed Oct. 23, 1940 ORNE Y .base plate electrode I,
Patented Mar. 28, 1944 OFFICE DRY RECTIFIER Heinrich Herrmann,
vested in the Alien Nuremberg,
Property Custodian Germany;
Application october 2s, 1940, sei-131m. 362.462 In Germany: October 17, 1939 7 Claims.
This invention relates to rectiners of the l-nind comprising so-called valve discs and consists in certain features of novelty which will appear from the following description, reference being had to the accompanying drawing, in which Fig. 1 is a fragmentary sectional view of a discs represented in Fiig. 2.
For the sake of clearness the plates and layers constituting the valve discs are shown larger in thickness than they really are. f
The valve discs represented in Figs. 1 and 2 are in well-known manner each composed of a a semi-conductor layer 3 carried by plate I,the so-called counterelectrode 5, produced by spraying metal against layer 3, and layer 'I that forms between the layers 3, 5 during the manufacture of the These rectifying valve discs I, 3, 'I, 5 have each a central lbore 2 provided in the plate I. The bores 2 are to receive a mandrel and an insulating tube 9 inserted over this spindle. The valve discs are serially mounted on the mandrel 8, 9.
The prior arrangement illustrated in Fig. 1 has insulating discs Ill and resilient contact plates II likewise mounted on the mandrel 8, 9 and disposed between the valve discs. 'Ihe plates II are arranged to contact with the trodes 5 and base plate electrodes I bear against the layers 3 and plates II and are surrounded by the counterelectrodes 5. They are thick enough to provide for cooling interspaces I2 between the valve discs.
The arrows in la means of the 2, namely, nut screws I3 on mandrel 8, 9 to contact each with one of the 65 sp aying, has raised (ci. 17a-ass) f extensions A trode I,
and the adjacent provided between the valve discs. The extensions A are separated from the layers 3 by annular insulating means which preferably are constituted by a lacquer coating 4 on the layers 3. 'I'he valve discs are 4pressed together by the nut screws I3 of spindle-8. The coatings 4 prevent the plates sprayed against layer 3 might fbe able to interconnect the parts I, 5, thus short-circuiting the blocking layer 'I also in this case.
The lacquer coating 4 may be 3 by stamping or rolling or method.
applied to layer any other suitable According to Fig. 3 the lacquer coating 4 may be produced as follows.
layer 3 metal is sprayed to form a layer 5' which striking the coating I5 acts to destr it at where layer 5', being produced by dipping or On the semi-conductor the layer 5" will hence contact with layer 6' and thus constitute a counter-electrode 5', 5 equivalent to that designated 5 in Fig. 2. vin order t'o give a pictorial idea of this the dotted line in Fig. 3 represents by way oi example the surface o1' the coating I5 before the layer 5" is produced on it.
What is claimed is: l
l. The method of manufacturing a valve disc which comprises spraying a metallic material onto a semi-conductor layer except for a central area thereof, so as to produce an annular metal layer on the semi-conductor layer, providing such metal layer and said area with a lacquer coating, that part of the lacquer coating which is applied t0 this area constituting an insulating means, and spraying a metallic material onto such lacquer coating so as to form a metal layer thereon and to destroy the lacquer coating in part, whereby the two said metal layers contact with each other through-the lacquer coating, thus constituting the said counterelectrode.
2. The method of manufacturing a va1ve disc in which the semi-conductor layer is of selenium while the insulating means is a lacquer coating, which method comprises applying this lacquer coating to an amorphous selenium layer and then heating the assembly composed -of a .base plate electrode, selenium layer and lacquer coating to the forming temperature of selenium.
3. The method of manufacturing a valve disc in which the semi-conductor layer is of selenium while the insulating means is a lacquer coating, which method comprises the step of heating the assembly composed of a base plate electrode and 35 selenium layer to a preliminary forming temperature of selenium, applying the said lacquer coating to the selenium layer, and heating the assembly composed of the base plate electrode, selenium layer and lacquer coating to the forming 'temperature of selenium.
4. A rectifier comprising a base plate, a semiconductor layer carried by the base plate, a first sprayed metal layer placed over an outer portion of the semi-conductor layer, an insulating layer over the central portion of said semi-conductor layer and extending in a thin coating over said sprayed metal layer, and a second sprayed metal layer over said thin insulating coating and making contact with the first-mentioned sprayed metal layer.
5. A rectier according to claim 4 in which the ilrst and second sprayed metal layers make contact with each other at minute points through the thin insulating coating.
6. A rectifier according to claim 4 in which a blocking layer is formed between said semiconductor layer and the first sprayed metal layer.
7. A rectifier comprising a base plate, a se lenium layer. carried by the base plate, a central portion of said selenium layer being covered by a disc of insulating material, a portion of said selenium layer not covered by said disc being covered by a blocking layer, a sprayed metal layer covering said blocking layer, an insulating illm over said metal layer, and a second metal layer covering said lm and said insulating disc, said metal layers making contact with each other at minute points through the insulating lm.
HEINRICH HERRMANN.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2345122X | 1939-10-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
US2345122A true US2345122A (en) | 1944-03-28 |
Family
ID=7995196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US362462A Expired - Lifetime US2345122A (en) | 1939-10-17 | 1940-10-23 | Dry rectifier |
Country Status (1)
Country | Link |
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US (1) | US2345122A (en) |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2417839A (en) * | 1942-12-03 | 1947-03-25 | Int Standard Electric Corp | Manufacture of rectifier discs |
US2434960A (en) * | 1942-02-27 | 1948-01-27 | Int Standard Electric Corp | Metal rectifier |
US2444385A (en) * | 1945-07-06 | 1948-06-29 | Union Switch & Signal Co | Alternating electric current rectifier |
US2450020A (en) * | 1942-12-03 | 1948-09-28 | Int Standard Electric Corp | Manufacture of rectifier disks |
US2473884A (en) * | 1946-05-07 | 1949-06-21 | Westinghouse Electric Corp | Contact means |
US2480124A (en) * | 1945-04-07 | 1949-08-30 | Standard Telephones Cables Ltd | Manufacture of selenium elements such as rectifiers |
US2493643A (en) * | 1944-01-15 | 1950-01-03 | Int Standard Electric Corp | Metal rectifier of the selenium type |
US2502540A (en) * | 1943-02-22 | 1950-04-04 | Philips Nv | Method of manufacturing blockinglayer cells of the selenium type |
US2517602A (en) * | 1945-01-17 | 1950-08-08 | Int Standard Electric Corp | Metal contact rectifier and photoelectric cell |
US2586539A (en) * | 1947-09-04 | 1952-02-19 | Gen Electric | Metal rectifier assembly |
US2637771A (en) * | 1950-04-15 | 1953-05-05 | Radio Receptor Company Inc | Rectifier |
US2647226A (en) * | 1947-09-20 | 1953-07-28 | Asea Ab | Dry rectifier valve plate |
US2752542A (en) * | 1950-09-23 | 1956-06-26 | Siemens Ag | Dry-plate rectifier |
US2758263A (en) * | 1952-01-08 | 1956-08-07 | Ericsson Telefon Ab L M | Contact device |
US2777100A (en) * | 1956-01-03 | 1957-01-08 | Morris Bookstein | Rectifier device |
US2787560A (en) * | 1955-03-03 | 1957-04-02 | Stoddart Aircraft Radio Co Inc | Microwave resistor manufacture |
US2804580A (en) * | 1953-08-13 | 1957-08-27 | Visseaux S A J | Unidirectionally conducting elements |
US2828452A (en) * | 1953-01-08 | 1958-03-25 | Westinghouse Air Brake Co | Humidity protective treatment for selenium rectifier cells |
US2858489A (en) * | 1955-11-04 | 1958-10-28 | Westinghouse Electric Corp | Power transistor |
US2877395A (en) * | 1955-03-28 | 1959-03-10 | Siemens Ag | Dry rectifier and method for its manufacture |
US2981872A (en) * | 1953-08-20 | 1961-04-25 | Fansteel Metallurgical Corp | Selenium rectifier |
DE975319C (en) * | 1947-09-20 | 1961-11-09 | Asea Ab | Dry rectifier plate |
DE1228002B (en) * | 1961-03-07 | 1966-11-03 | Gerhard Gille Dr Ing | Dry rectifier |
-
1940
- 1940-10-23 US US362462A patent/US2345122A/en not_active Expired - Lifetime
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2434960A (en) * | 1942-02-27 | 1948-01-27 | Int Standard Electric Corp | Metal rectifier |
US2450020A (en) * | 1942-12-03 | 1948-09-28 | Int Standard Electric Corp | Manufacture of rectifier disks |
US2417839A (en) * | 1942-12-03 | 1947-03-25 | Int Standard Electric Corp | Manufacture of rectifier discs |
US2502540A (en) * | 1943-02-22 | 1950-04-04 | Philips Nv | Method of manufacturing blockinglayer cells of the selenium type |
US2493643A (en) * | 1944-01-15 | 1950-01-03 | Int Standard Electric Corp | Metal rectifier of the selenium type |
US2517602A (en) * | 1945-01-17 | 1950-08-08 | Int Standard Electric Corp | Metal contact rectifier and photoelectric cell |
US2480124A (en) * | 1945-04-07 | 1949-08-30 | Standard Telephones Cables Ltd | Manufacture of selenium elements such as rectifiers |
US2444385A (en) * | 1945-07-06 | 1948-06-29 | Union Switch & Signal Co | Alternating electric current rectifier |
US2473884A (en) * | 1946-05-07 | 1949-06-21 | Westinghouse Electric Corp | Contact means |
US2586539A (en) * | 1947-09-04 | 1952-02-19 | Gen Electric | Metal rectifier assembly |
DE975319C (en) * | 1947-09-20 | 1961-11-09 | Asea Ab | Dry rectifier plate |
US2647226A (en) * | 1947-09-20 | 1953-07-28 | Asea Ab | Dry rectifier valve plate |
US2637771A (en) * | 1950-04-15 | 1953-05-05 | Radio Receptor Company Inc | Rectifier |
US2752542A (en) * | 1950-09-23 | 1956-06-26 | Siemens Ag | Dry-plate rectifier |
US2758263A (en) * | 1952-01-08 | 1956-08-07 | Ericsson Telefon Ab L M | Contact device |
US2828452A (en) * | 1953-01-08 | 1958-03-25 | Westinghouse Air Brake Co | Humidity protective treatment for selenium rectifier cells |
US2804580A (en) * | 1953-08-13 | 1957-08-27 | Visseaux S A J | Unidirectionally conducting elements |
US2981872A (en) * | 1953-08-20 | 1961-04-25 | Fansteel Metallurgical Corp | Selenium rectifier |
US2787560A (en) * | 1955-03-03 | 1957-04-02 | Stoddart Aircraft Radio Co Inc | Microwave resistor manufacture |
US2877395A (en) * | 1955-03-28 | 1959-03-10 | Siemens Ag | Dry rectifier and method for its manufacture |
US2858489A (en) * | 1955-11-04 | 1958-10-28 | Westinghouse Electric Corp | Power transistor |
US2777100A (en) * | 1956-01-03 | 1957-01-08 | Morris Bookstein | Rectifier device |
DE1228002B (en) * | 1961-03-07 | 1966-11-03 | Gerhard Gille Dr Ing | Dry rectifier |
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