GB500344A - Improvements in and relating to dry surface-contact electric rectifiers - Google Patents

Improvements in and relating to dry surface-contact electric rectifiers

Info

Publication number
GB500344A
GB500344A GB27540/38A GB2754038A GB500344A GB 500344 A GB500344 A GB 500344A GB 27540/38 A GB27540/38 A GB 27540/38A GB 2754038 A GB2754038 A GB 2754038A GB 500344 A GB500344 A GB 500344A
Authority
GB
United Kingdom
Prior art keywords
relating
contact electric
dry surface
sept
electric rectifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB27540/38A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Thomson Houston Co Ltd
Original Assignee
British Thomson Houston Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Thomson Houston Co Ltd filed Critical British Thomson Houston Co Ltd
Publication of GB500344A publication Critical patent/GB500344A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Rectifiers (AREA)

Abstract

500,344. Asymmetrically conducting resistances. BRITISH THOMSON-HOUSTON CO., Ltd. Sept. 21, 1938, No. 27540. Convention date, Sept. 22, 1937. [Class 37] In an electric valve of the dry rectifier type a control grid 3 is embedded in the semiconductor layer 2 and is coated with an insulating layer 4. The grid 3 may be of aluminium and the insulator an oxide film or of silver with a coating of quartz vaporized on it.
GB27540/38A 1937-09-22 1938-09-21 Improvements in and relating to dry surface-contact electric rectifiers Expired GB500344A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE500344X 1937-09-22

Publications (1)

Publication Number Publication Date
GB500344A true GB500344A (en) 1939-02-07

Family

ID=6545602

Family Applications (1)

Application Number Title Priority Date Filing Date
GB27540/38A Expired GB500344A (en) 1937-09-22 1938-09-21 Improvements in and relating to dry surface-contact electric rectifiers

Country Status (1)

Country Link
GB (1) GB500344A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2428400A (en) * 1940-08-02 1947-10-07 Hartford Nat Bank & Trust Co Blocking-layer cells comprising one or more grids embedded in the blocking layer
US2456758A (en) * 1941-04-21 1948-12-21 Hartford Nat Bank & Trust Co Blocking-layer electrode system
US2683840A (en) * 1948-10-14 1954-07-13 Westinghouse Freins & Signaux Semiconductor for control purposes
US2758263A (en) * 1952-01-08 1956-08-07 Ericsson Telefon Ab L M Contact device
DE971775C (en) * 1942-09-22 1959-03-26 Hildegard Koepke Dr Device for amplifying electrical currents and voltages
DE1203882B (en) * 1961-01-27 1965-10-28 Elektronik M B H Method for introducing a metallic grid into a single-crystal zone of a semiconductor component
US3320464A (en) * 1963-05-06 1967-05-16 Hughes Aircraft Co Inverted solid state triode and tetrode devices
DE1246898B (en) * 1962-06-01 1967-08-10 Ibm Process for the production of a thin metallic grid for electronic solid state components

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2428400A (en) * 1940-08-02 1947-10-07 Hartford Nat Bank & Trust Co Blocking-layer cells comprising one or more grids embedded in the blocking layer
US2456758A (en) * 1941-04-21 1948-12-21 Hartford Nat Bank & Trust Co Blocking-layer electrode system
DE971775C (en) * 1942-09-22 1959-03-26 Hildegard Koepke Dr Device for amplifying electrical currents and voltages
US2683840A (en) * 1948-10-14 1954-07-13 Westinghouse Freins & Signaux Semiconductor for control purposes
US2758263A (en) * 1952-01-08 1956-08-07 Ericsson Telefon Ab L M Contact device
DE1203882B (en) * 1961-01-27 1965-10-28 Elektronik M B H Method for introducing a metallic grid into a single-crystal zone of a semiconductor component
DE1246898B (en) * 1962-06-01 1967-08-10 Ibm Process for the production of a thin metallic grid for electronic solid state components
US3320464A (en) * 1963-05-06 1967-05-16 Hughes Aircraft Co Inverted solid state triode and tetrode devices

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