GB603940A - Improvements in or relating to blocking-layer cells - Google Patents

Improvements in or relating to blocking-layer cells

Info

Publication number
GB603940A
GB603940A GB29545/45A GB2954545A GB603940A GB 603940 A GB603940 A GB 603940A GB 29545/45 A GB29545/45 A GB 29545/45A GB 2954545 A GB2954545 A GB 2954545A GB 603940 A GB603940 A GB 603940A
Authority
GB
United Kingdom
Prior art keywords
layer
films
blocking
grid
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB29545/45A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Lamps Ltd
Koninklijke Philips NV
Original Assignee
Philips Lamps Ltd
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Lamps Ltd, Philips Gloeilampenfabrieken NV filed Critical Philips Lamps Ltd
Publication of GB603940A publication Critical patent/GB603940A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Ceramic Engineering (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

603,940. Asymmetrically-conducting resistances. PHILIPS LAMPS, Ltd. Nov. 6, 1945; No. 29545. Convention date, June 3, 1940. [Class 37] The blocking layer of a rectifier element in which one or more grids 5 are embedded is made up of films 3, 4 of different materials, e.g. from layers of solutions having no common solvent, in order that application of the grid layer and subsequent films forming the blocking layer shall not remove or modify the films already applied. A layer of iodized copper is deposited to form the grid and is sufficiently thin for the electron flow to pass through.
GB29545/45A 1940-07-03 1945-11-06 Improvements in or relating to blocking-layer cells Expired GB603940A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL229960X 1940-07-03

Publications (1)

Publication Number Publication Date
GB603940A true GB603940A (en) 1948-06-25

Family

ID=19779877

Family Applications (1)

Application Number Title Priority Date Filing Date
GB29545/45A Expired GB603940A (en) 1940-07-03 1945-11-06 Improvements in or relating to blocking-layer cells

Country Status (5)

Country Link
US (1) US2328440A (en)
BE (1) BE442069A (en)
CH (1) CH229960A (en)
GB (1) GB603940A (en)
NL (1) NL60402C (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2428400A (en) * 1940-08-02 1947-10-07 Hartford Nat Bank & Trust Co Blocking-layer cells comprising one or more grids embedded in the blocking layer
CH238752A (en) * 1941-04-21 1945-08-15 Philips Nv Barrier electrode system with at least one grid embedded in the barrier layer.
BE446156A (en) * 1941-06-26
BE478832A (en) * 1942-07-02 1900-01-01
NL63032C (en) * 1944-04-06 1900-01-01
US2452603A (en) * 1944-04-08 1948-11-02 Standard Telephones Cables Ltd Metal contact rectifier
US2446465A (en) * 1944-11-11 1948-08-03 Selenium rectifier
US2607832A (en) * 1947-07-19 1952-08-19 Vickers Inc Devices which have selenium as constituent parts thereof
NL84061C (en) * 1948-06-26
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
BE490438A (en) * 1948-08-13
US2689191A (en) * 1948-12-10 1954-09-14 Rca Corp Formation of reflecting coatings
US3204159A (en) * 1960-09-14 1965-08-31 Bramley Jenny Rectifying majority carrier device
US3250967A (en) * 1961-12-22 1966-05-10 Rca Corp Solid state triode
US3153154A (en) * 1962-02-13 1964-10-13 James J Murray Grid controlled transistor device
US3515629A (en) * 1966-09-30 1970-06-02 Raytheon Co Electrical device having intermediate dielectric layer

Also Published As

Publication number Publication date
NL60402C (en)
CH229960A (en) 1943-11-30
US2328440A (en) 1943-08-31
BE442069A (en)

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