GB471157A - Improvements in photoelectric devices and electric contact rectifiers of the barrierlayer type - Google Patents

Improvements in photoelectric devices and electric contact rectifiers of the barrierlayer type

Info

Publication number
GB471157A
GB471157A GB588736A GB588736A GB471157A GB 471157 A GB471157 A GB 471157A GB 588736 A GB588736 A GB 588736A GB 588736 A GB588736 A GB 588736A GB 471157 A GB471157 A GB 471157A
Authority
GB
United Kingdom
Prior art keywords
selenium
type
electric contact
barrierlayer
photoelectric devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB588736A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB588736A priority Critical patent/GB471157A/en
Publication of GB471157A publication Critical patent/GB471157A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers

Abstract

471,157. Light-sensitive cells; rectifiers. GENERAL ELECTRIC CO., Ltd., JOHNSON, W. A., and TURNER, H. C. Feb. 27, 1936, No. 5887. [Class 40 (iii)] [Also in Group XXXVI] In making a photo-electric'device or electric contact rectifier of the type having a selenium electrode and a metal electrode separated by a barrier layer, the selenium electrode is coated with selenium dioxide. A base plate provided with a layer of selenium in the metallic form (e.g. as described in Specification 465,760) may be taken, and a mixture of selenium dioxide and selenium sublimed thereon in a closed oven. After cooling, a conductive layer is added, for example by sputtering gold or platinum on to the surface of the sublimed material.
GB588736A 1936-02-27 1936-02-27 Improvements in photoelectric devices and electric contact rectifiers of the barrierlayer type Expired GB471157A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB588736A GB471157A (en) 1936-02-27 1936-02-27 Improvements in photoelectric devices and electric contact rectifiers of the barrierlayer type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB588736A GB471157A (en) 1936-02-27 1936-02-27 Improvements in photoelectric devices and electric contact rectifiers of the barrierlayer type

Publications (1)

Publication Number Publication Date
GB471157A true GB471157A (en) 1937-08-27

Family

ID=9804491

Family Applications (1)

Application Number Title Priority Date Filing Date
GB588736A Expired GB471157A (en) 1936-02-27 1936-02-27 Improvements in photoelectric devices and electric contact rectifiers of the barrierlayer type

Country Status (1)

Country Link
GB (1) GB471157A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2477870A (en) * 1947-07-29 1949-08-02 Visking Corp Method of preparing nitroalkane sulfonates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2477870A (en) * 1947-07-29 1949-08-02 Visking Corp Method of preparing nitroalkane sulfonates

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