GB482239A - Improvements in and relating to dry plate rectifiers - Google Patents

Improvements in and relating to dry plate rectifiers

Info

Publication number
GB482239A
GB482239A GB17044/37A GB1704437A GB482239A GB 482239 A GB482239 A GB 482239A GB 17044/37 A GB17044/37 A GB 17044/37A GB 1704437 A GB1704437 A GB 1704437A GB 482239 A GB482239 A GB 482239A
Authority
GB
United Kingdom
Prior art keywords
layer
selenium
layers
relating
june
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB17044/37A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Thomson Houston Co Ltd
Original Assignee
British Thomson Houston Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Thomson Houston Co Ltd filed Critical British Thomson Houston Co Ltd
Publication of GB482239A publication Critical patent/GB482239A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/101—Application of the selenium or tellurium to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Heat Sensitive Colour Forming Recording (AREA)

Abstract

482,239. Asymmetrically - conducting resistances. BRITISH THOMSON-HOUSTON CO., Ltd. June 18, 1937, No. 17044. Convention date, June 22, 1936. [Class 37] A dry rectifier is constructed by applying successively to the base two or more layers of suitable semi-conducting material such as selenium and subjecting the base after the application of each layer to the requisite treatment to bring the layer to a rectifying condition. The first layer, is preferably applied mechanically as by melting the second layer is preferably vaporized on. The same material may be used for the various layers or a different material or a different modification of the same material. Thus the first layer may be composed of a mixture of iodine and selenium while the subsequent layers are of pure selenium.
GB17044/37A 1935-06-22 1937-06-18 Improvements in and relating to dry plate rectifiers Expired GB482239A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE482239X 1935-06-22

Publications (1)

Publication Number Publication Date
GB482239A true GB482239A (en) 1938-03-25

Family

ID=6542800

Family Applications (1)

Application Number Title Priority Date Filing Date
GB17044/37A Expired GB482239A (en) 1935-06-22 1937-06-18 Improvements in and relating to dry plate rectifiers

Country Status (3)

Country Link
US (1) US2189576A (en)
GB (1) GB482239A (en)
NL (1) NL49864C (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE883784C (en) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Process for the production of surface rectifiers and crystal amplifier layers from elements
DE892330C (en) * 1950-06-20 1953-10-04 Siemens Ag Dry rectifier
DE909846C (en) * 1941-06-20 1954-04-26 Aeg Process for the production of an asymmetrically conductive system with selenium as semiconductor
DE919360C (en) * 1949-08-17 1954-10-21 Western Electric Co Selenium rectifier with tellurium and process for its manufacture
US2736672A (en) * 1939-01-22 1956-02-28 Int Standard Electric Corp Selenium rectifier of increased blocking properties
DE966906C (en) * 1953-04-09 1957-09-19 Siemens Ag Method for non-blocking contacting of surface rectifiers or transistors with a semiconductor single crystal having a p-n layer
US2819433A (en) * 1951-03-22 1958-01-07 Syntron Co Selenium rectifiers and the method of making the same
DE968966C (en) * 1949-05-30 1958-04-10 Siemens Ag Dry rectifier, in particular selenium rectifier, and method for its manufacture
DE1060053B (en) * 1953-02-10 1959-06-25 Siemens Ag Process for the production of selenium rectifiers with a multilayer semiconductor with different halogen contents and electropositive additives in the individual layers
DE974580C (en) * 1952-06-19 1961-02-16 Siemens Ag Method of manufacturing selenium rectifier plates
DE1105996B (en) * 1954-04-30 1961-05-04 Siemens Ag Method and arrangement for the manufacture of selenium rectifiers
DE975018C (en) * 1952-07-17 1961-07-06 Siemens Ag Process for the manufacture of selenium rectifiers

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE974421C (en) * 1943-07-05 1960-12-22 Aeg Semiconductor layer dry rectifier and process for its manufacture
US2446467A (en) * 1944-11-11 1948-08-03 Fansteel Metallurgical Corp Dry plate rectifier
BE634687A (en) * 1947-01-06
BE501244A (en) * 1950-02-14
US2659846A (en) * 1951-05-15 1953-11-17 Int Rectifier Corp Selenium element and method of making it
BE516298A (en) * 1951-12-18
US2901348A (en) * 1953-03-17 1959-08-25 Haloid Xerox Inc Radiation sensitive photoconductive member
US2803541A (en) * 1953-05-29 1957-08-20 Haloid Co Xerographic plate
US2833675A (en) * 1953-10-01 1958-05-06 Rca Corp Method of imparting red response to a photoconductive target for a pickup tube
US2963365A (en) * 1956-02-16 1960-12-06 Rca Corp Electrostatic printing

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2736672A (en) * 1939-01-22 1956-02-28 Int Standard Electric Corp Selenium rectifier of increased blocking properties
DE909846C (en) * 1941-06-20 1954-04-26 Aeg Process for the production of an asymmetrically conductive system with selenium as semiconductor
DE883784C (en) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Process for the production of surface rectifiers and crystal amplifier layers from elements
DE968966C (en) * 1949-05-30 1958-04-10 Siemens Ag Dry rectifier, in particular selenium rectifier, and method for its manufacture
DE919360C (en) * 1949-08-17 1954-10-21 Western Electric Co Selenium rectifier with tellurium and process for its manufacture
DE892330C (en) * 1950-06-20 1953-10-04 Siemens Ag Dry rectifier
US2819433A (en) * 1951-03-22 1958-01-07 Syntron Co Selenium rectifiers and the method of making the same
DE974580C (en) * 1952-06-19 1961-02-16 Siemens Ag Method of manufacturing selenium rectifier plates
DE975018C (en) * 1952-07-17 1961-07-06 Siemens Ag Process for the manufacture of selenium rectifiers
DE1060053B (en) * 1953-02-10 1959-06-25 Siemens Ag Process for the production of selenium rectifiers with a multilayer semiconductor with different halogen contents and electropositive additives in the individual layers
DE966906C (en) * 1953-04-09 1957-09-19 Siemens Ag Method for non-blocking contacting of surface rectifiers or transistors with a semiconductor single crystal having a p-n layer
DE1105996B (en) * 1954-04-30 1961-05-04 Siemens Ag Method and arrangement for the manufacture of selenium rectifiers

Also Published As

Publication number Publication date
NL49864C (en)
US2189576A (en) 1940-02-06

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