US2736672A - Selenium rectifier of increased blocking properties - Google Patents

Selenium rectifier of increased blocking properties Download PDF

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US2736672A
US2736672A US289351A US28935152A US2736672A US 2736672 A US2736672 A US 2736672A US 289351 A US289351 A US 289351A US 28935152 A US28935152 A US 28935152A US 2736672 A US2736672 A US 2736672A
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selenium
halogen
metal
layer
blocking layer
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Klein Otto
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International Standard Electric Corp
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    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06B—TREATING TEXTILE MATERIALS USING LIQUIDS, GASES OR VAPOURS
    • D06B3/00—Passing of textile materials through liquids, gases or vapours to effect treatment, e.g. washing, dyeing, bleaching, sizing, impregnating
    • D06B3/04—Passing of textile materials through liquids, gases or vapours to effect treatment, e.g. washing, dyeing, bleaching, sizing, impregnating of yarns, threads or filaments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/101—Application of the selenium or tellurium to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/103—Conversion of the selenium or tellurium to the conductive state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06B—TREATING TEXTILE MATERIALS USING LIQUIDS, GASES OR VAPOURS
    • D06B2700/00—Treating of textile materials, e.g. bleaching, dyeing, mercerising, impregnating, washing; Fulling of fabrics
    • D06B2700/25—Sizing, starching or impregnating warp yarns; Making glazed yarn; Drying sized warp yarns
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S62/00—Refrigeration
    • Y10S62/20—Materials used to prevent corrosion in refrigeration system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12708—Sn-base component

Definitions

  • the amount of halogen contents determines the properties of the rectifier in both flux and blocking direction.
  • the resistance of the selenium is considerably reduced by the halogen contents. This, however, is also desired for the great mass of the semiconducting layer.
  • a blocking layer is formed at the surface of the selenium. This blocking layer should be rather highly resistive in order to achieve a high blocking voltage and should, therefore, contain as little as possible or no halogen at all. It is therefore known since a rather long time, to build up selenium rectifiers in a way, that a halogen-poor or halogen-free selenium layer is vaporized upon a halogen-containing selenium layer.
  • the initially established condition of the halogen distribution cannot be maintained on the long run.
  • the halogen migrates gradually into the actual blocking layer after having been transported before, amongst others by the electrical formation, out of the actual blocking layer. Owing to these processes of diffusion the properties of the rectifiers will be deteriorated in the course of time.
  • the selenium rectifier will be built up in such a manner, that on to a selenium layer having high contents of halogen amounting to a strength up to 100 and halogen contents amounting up to 100 mg.
  • a very thin halogen-free selenium layer is deposited, which is provided with conductivitydecreasing metal additions. Therefore, additions of alkaline metals may be added to the selenium of this second thin layer.
  • Both layers may be deposited according to the known methods. They both may be pressed on or evaporated. It is of advantage to press on the first, halogenated layer, in the usual manner on air, because a high content of halogen is guaranteed in this way.
  • the second thin halogen-free selenium layer is con veniently being evaporated.
  • Fig. 1 shows the conductivity of the selenium in' deendency of d'iifer'ent contents of sodium and iodine
  • Fig. 2 shows the most favourable dosing of iodine and metal in the blocking layer z'one.
  • the examination of the conductivity behaviour offselenium has resulted in that the adding of metals tohaloeriated selenium'leads' to quick decrease of the conductivity in that particular moment, in wt ichtiie metal is available in the amount corresponding ap roximately to the chemically stable compound of the metal-halogenide.
  • Certain metals, such as alkaline metals (sodium) show this effect in a specially distinct manner, as may be seen from Fig. 1. At about 50% each, of sodium and iodine, the curvature of conductivity a shows a severe drop.
  • the concentration of disturbing points will be reduced by saturating the iodine with metal for obtaining a metal-iodide, thus diminishing the conductivity.
  • the added metal first of all must chemically combine the iodine, and the resulting surplus must then be available in the shape of selenide and not as oxide.
  • the metal When being melted down in an iodine-free selenium, the metal has to form selenides and may not oxidize prior thereto. If this is the case then the layer, which is deposited on the halogenated layer, is regarded as being highly resistive and, therefore, suitable as a blocking layer.
  • the blocking layer zone is said to consist of a metal-selenidecontaining selenium, whereby the equilibrium of reaction is always shifted towards the right in the following order of succession: metal-oxide, metal-selenide, metal-iodide.
  • halogen migrates into the blocking layer, for instance, by difiusion or electrolysis, then a part of the excessive metal-selenide changes into metal-iodide, bufiering therewith with the halogen.
  • the blocking layer remains halogen-poor, i. e. highly resistive.
  • a selenium rectifier comprising a base electrode, a halogen-containing selenium layer on said base electrode, and a second selenium layer substantially free of halogen, containing as an additive an alkaline metal and a crystaJlization-retarding substance taken from the class cons'isting of arsenic and phosphorous.

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Description

Feh. 28,1956
SELENIUM RECTIFIER OF INCREASED BLOCKING PROPERTIES O. KLEIN Filed May 22, 1952 Selenium with 10 mg '/0 mefal, e. q sodium metal electrode Jeleni iodin e +mefal Selenium iodine semiconductor melpil meld! iodide iodide metal selenid iodine INVENTOR QKLEI N ATT OR EY United States Patent SELENIUM Riemann QETNCREASED BLOCKING rn'ornnrrns 2 Claims. (Cl. 117200) It is well known with selenium rectifiers to add halogen additions to the selenium. The amount of halogen contents determines the properties of the rectifier in both flux and blocking direction. The resistance of the selenium is considerably reduced by the halogen contents. This, however, is also desired for the great mass of the semiconducting layer. At the surface of the selenium a blocking layer is formed. This blocking layer should be rather highly resistive in order to achieve a high blocking voltage and should, therefore, contain as little as possible or no halogen at all. It is therefore known since a rather long time, to build up selenium rectifiers in a way, that a halogen-poor or halogen-free selenium layer is vaporized upon a halogen-containing selenium layer.
Owing to diffusion, which is still sponsored by high temperatures, the initially established condition of the halogen distribution cannot be maintained on the long run. Moreover, the halogen migrates gradually into the actual blocking layer after having been transported before, amongst others by the electrical formation, out of the actual blocking layer. Owing to these processes of diffusion the properties of the rectifiers will be deteriorated in the course of time.
Furthemore it is known that additions of metal make the selenium highly resistive. Especially such metals are suitable which, when being melted, rather form selenides than oxides. These are for example, alkaline or alkaline earth metals, both of which are included by the term alkaline metals. If now in the selenium, additionsof halogen are existing as well as additions of metal, then the transition from the conductivity-increasing to the conductivity-decreasing influence will be characterized perhaps by the stoechiometric relation of metal and halogen. Decisive for this stoechiometric relation is the respective stable metal halogenide, such as sodium-iodide. Therefore, the fact is to be taken into account that, whenever the metal in the blocking layer is available in surplus, the blocking layer zone will remain highly resistive also at the diffusing into, of halogen from the semi-conducting layer.
According to the invention, however, the selenium rectifier will be built up in such a manner, that on to a selenium layer having high contents of halogen amounting to a strength up to 100 and halogen contents amounting up to 100 mg. a very thin halogen-free selenium layer is deposited, which is provided with conductivitydecreasing metal additions. Therefore, additions of alkaline metals may be added to the selenium of this second thin layer. Both layers may be deposited according to the known methods. They both may be pressed on or evaporated. It is of advantage to press on the first, halogenated layer, in the usual manner on air, because a high content of halogen is guaranteed in this way. The second thin halogen-free selenium layer is con veniently being evaporated.
A better understanding of the idea of this invention 2 may be had from the description given below and made with reference to the copending drawing", in which:
Fig. 1 shows the conductivity of the selenium in' deendency of d'iifer'ent contents of sodium and iodine, and
Fig. 2 shows the most favourable dosing of iodine and metal in the blocking layer z'one. The examination of the conductivity behaviour offselenium has resulted in that the adding of metals tohaloeriated selenium'leads' to quick decrease of the conductivity in that particular moment, in wt ichtiie metal is available in the amount corresponding ap roximately to the chemically stable compound of the metal-halogenide. Certain metals, such as alkaline metals (sodium) show this effect in a specially distinct manner, as may be seen from Fig. 1. At about 50% each, of sodium and iodine, the curvature of conductivity a shows a severe drop.
According to certain presumptions, the concentration of disturbing points will be reduced by saturating the iodine with metal for obtaining a metal-iodide, thus diminishing the conductivity. Metals which already form oxides when being smelted on air, however, are of no influence upon the conductibility.
At a melting down, therefore, it is required that the added metal first of all must chemically combine the iodine, and the resulting surplus must then be available in the shape of selenide and not as oxide. When being melted down in an iodine-free selenium, the metal has to form selenides and may not oxidize prior thereto. If this is the case then the layer, which is deposited on the halogenated layer, is regarded as being highly resistive and, therefore, suitable as a blocking layer. The blocking layer zone is said to consist of a metal-selenidecontaining selenium, whereby the equilibrium of reaction is always shifted towards the right in the following order of succession: metal-oxide, metal-selenide, metal-iodide. If halogen migrates into the blocking layer, for instance, by difiusion or electrolysis, then a part of the excessive metal-selenide changes into metal-iodide, bufiering therewith with the halogen. The blocking layer, however, remains halogen-poor, i. e. highly resistive.
For the purpose of achieving layers of high resistance, it is suggested by the present invention to carry out a laminated building up by means of selenium layers containing halogen and metal respectively. A distribution of the added additions in the blocking layer will then be performed by diiferent diifusing processes, as represented in Fig. 2 of the drawing. A very highly resistive layer, providing the rectifier with excellent properties, will then be formed approximately near the point of intersection of the two graphic curves representing the metal and iodine concentration.
As mentioned already before, after this application of the counter electrode, one will have to reckon with processes of difiusion and with electrolysis, owing to which the halogen gradually will enter the actual blocking layer, whereby the blocking effect will be aiiected. In order to support the effect of the metal, existing in the blocking layer, it will be convenient to add recrystallization-retarding substances such as arsenic or phosphorous and/ or dilfusion-retarding additions, such as neutral metal oxides (A1203) to the selenium. It is easy to perceive, that the recrystallization-retarding additions should substantially be existent in the blocking layer, whilst the diffusion-retarding additions should perform their effect in the halogen-containing semi-conducting layer. The different components may be added singly or in mixtures. The added quantities may amount up to mg. percent for each component.
While I have described above the principles of my invention in connection with specific apparatus, it is to be clearly understood that this description is made only by way of example and not as a limitation to the scope of my invention as set forth in the objects thereof and in the accompanying claims.
What is claimed is:
l. A selenium rectifier comprising a base electrode, a halogen-containing selenium layer on said base electrode, and a second selenium layer substantially free of halogen, containing as an additive an alkaline metal and a crystaJlization-retarding substance taken from the class cons'isting of arsenic and phosphorous.
2. A selenium rectifier according to claim 1 wherein said selenium contains a diffusion-retarding addition of aluminum oxide.
References Cited in the file of this patent UNITED STATES PATENTS Hewlett Nov. 16, 1943 Smith Nov. 16, 1948 FOREIGN PATENTS Great Britain Mar. 25, 1938 Great Britain Sept. 29, 1945 France Dec. 6, 1948 France Feb. 21, 1949

Claims (1)

1. A SELENIUM RECTIFIER COMPRISING A BASE ELECTRODE, A HALOGEN-CONTAINING SELENIUM LAYER ON SAID BASE ELECTRODE, AND A SECOND SELENIUM LAYER SUBSTANTIALLY FREE OF HALOGEN CONTAINING AS AN ADDITIVE AN ALKALINE METAL AND A CRYSTALLIZATION-RETARDING SUBSTANCE TAKEN FROM THE CLASS CONSISTING OF ARSENIC AND PHOSPHOROUS.
US289351A 1939-01-22 1952-05-22 Selenium rectifier of increased blocking properties Expired - Lifetime US2736672A (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DE1939V0035594 DE696361C (en) 1939-01-22 1939-01-22 Device for oiling and finishing of running textile threads
GB224048X 1939-03-17
DE2736672X 1951-05-25
DES23645A DE892193C (en) 1939-01-22 1951-06-22 Selenium rectifier
DE2867550X 1953-02-27
DES34699A DE1015542B (en) 1939-01-22 1953-08-06 Method of manufacturing selenium rectifier plates
DEST9480A DE1056746B (en) 1939-01-22 1955-02-24 Process for the manufacture of selenium rectifiers

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US320380A Expired - Lifetime US2314104A (en) 1939-01-22 1940-02-23 Selenium rectifier
US289351A Expired - Lifetime US2736672A (en) 1939-01-22 1952-05-22 Selenium rectifier of increased blocking properties
US411539A Expired - Lifetime US2867550A (en) 1939-01-22 1954-02-19 Method of making selenium rectifiers and article produced thereby
US558423A Expired - Lifetime US2908592A (en) 1939-01-22 1956-01-11 Method of producing a selenium rectifier

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US411539A Expired - Lifetime US2867550A (en) 1939-01-22 1954-02-19 Method of making selenium rectifiers and article produced thereby
US558423A Expired - Lifetime US2908592A (en) 1939-01-22 1956-01-11 Method of producing a selenium rectifier

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BE (4) BE545512A (en)
CH (5) CH224048A (en)
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2858239A (en) * 1956-03-13 1958-10-28 Siemens Ag Method for producing selenium rectifiers
US3077386A (en) * 1958-01-02 1963-02-12 Xerox Corp Process for treating selenium

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976574C (en) * 1939-10-17 1963-11-21 Standard Elek K Lorenz Ag Process for the manufacture of dry rectifier plates
US2449420A (en) * 1942-03-28 1948-09-14 Hartford Nat Bank & Trust Co Electrode system
DE966415C (en) * 1943-06-19 1957-08-01 Siemens Ag Selenium rectifier in column shape
US2444430A (en) * 1943-07-13 1948-07-06 Fed Telephone & Radio Corp Metal rectifier element
US2419602A (en) * 1943-08-14 1947-04-29 Standard Telephones Cables Ltd Rectifier and method of making the same
BE475135A (en) * 1943-10-26 1900-01-01
US2493643A (en) * 1944-01-15 1950-01-03 Int Standard Electric Corp Metal rectifier of the selenium type
GB570722A (en) * 1944-01-15 1945-07-19 Standard Telephones Cables Ltd Improvements in or relating to metal rectifiers of the selenium type
US2444255A (en) * 1944-11-10 1948-06-29 Gen Electric Fabrication of rectifier cells
US2517602A (en) * 1945-01-17 1950-08-08 Int Standard Electric Corp Metal contact rectifier and photoelectric cell
US2454846A (en) * 1945-03-22 1948-11-30 Standard Telephones Cables Ltd Rectifier stack
NL132958C (en) * 1945-04-07 1900-01-01
US2482817A (en) * 1945-05-17 1949-09-27 Standard Telephones Cables Ltd Rectifier
US2539894A (en) * 1947-07-18 1951-01-30 Union Switch & Signal Co Dry surface contact rectifier assembly
DE975319C (en) * 1947-09-20 1961-11-09 Asea Ab Dry rectifier plate
US2647226A (en) * 1947-09-20 1953-07-28 Asea Ab Dry rectifier valve plate
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
US2752542A (en) * 1950-09-23 1956-06-26 Siemens Ag Dry-plate rectifier
DE972120C (en) * 1950-09-24 1959-05-27 Siemens Ag Process for the production of a selenium rectifier of the free-form design
DE972128C (en) * 1951-06-29 1959-05-27 Siemens Ag Arrangement for current consumption in dry rectifiers
NL94441C (en) * 1951-09-15
US2716207A (en) * 1951-10-06 1955-08-23 Fansteel Metallurgical Corp Electrical apparatus
DE1046192B (en) * 1952-07-29 1958-12-11 Licentia Gmbh Dry rectifier plate
DE976249C (en) * 1952-08-18 1963-06-12 Licentia Gmbh Method of sticking a pick-up electrode
DE1008415B (en) * 1952-11-17 1957-05-16 Siemens Ag Process for the production of dry rectifier disks, especially for selenium rectifiers
US2933661A (en) * 1953-08-05 1960-04-19 Fansteel Metallurgical Corp Rectifier and method of making same
US2853656A (en) * 1953-08-07 1958-09-23 Burroughs Corp Printed circuit panel assembly
US2981872A (en) * 1953-08-20 1961-04-25 Fansteel Metallurgical Corp Selenium rectifier
US2788474A (en) * 1953-09-10 1957-04-09 Westinghouse Electric Corp Rectifier assembly
US2817797A (en) * 1953-11-23 1957-12-24 United Carr Fastener Corp Rectifier
DE1121734B (en) * 1953-12-11 1962-01-11 Siemens Ag Dry rectifier element and method for its manufacture
DE975284C (en) * 1954-02-19 1961-11-02 Licentia Gmbh Selenium rectifier with a ring-shaped insulating piece applied to the selenium layer or to the carrier electrode
DE977210C (en) * 1955-03-29 1965-06-10 Siemens Ag Process for the production of dry rectifiers with an insulating layer which emits gas when heated at the points exposed to pressure
DE1116828B (en) * 1955-09-15 1961-11-09 Standard Elektrik Lorenz Ag Method for producing a dry rectifier, in particular selenium rectifier, in which an insulating layer is arranged over the selenium at the pressure-stressed points
US3077421A (en) * 1961-03-13 1963-02-12 Gen Am Transport Processes of producing tin-nickelphosphorus coatings
GB937151A (en) * 1961-03-14 1963-09-18 Westinghouse Brake & Signal Method of manufacturing selenium rectifiers and rectifiers manufactured thereby
DE1141386B (en) * 1961-04-26 1962-12-20 Siemens Ag Method for manufacturing a semiconductor device
US3077285A (en) * 1961-09-15 1963-02-12 Gen Am Transport Tin-nickel-phosphorus alloy coatings
DE1209210B (en) * 1961-10-31 1966-01-20 Siemens Ag Process for the production of selenium rectifier tablets with an active area which is small in relation to their total area
DE1208822B (en) * 1961-10-31 1966-01-13 Siemens Ag Process for the production of selenium rectifier tablets with an active area which is small in relation to their total area
NL287468A (en) * 1962-01-29
DE1185727B (en) * 1962-03-15 1965-01-21 Licentia Gmbh Process for the manufacture of selenium rectifiers
US3238426A (en) * 1962-06-08 1966-03-01 Gen Instrument Corp Casing for series connected rectifier assembly
DE1176282B (en) * 1962-07-23 1964-08-20 Ckd Modrany Narodni Podnik Selenium rectifier
US3361591A (en) * 1964-04-15 1968-01-02 Hughes Aircraft Co Production of thin films of cadmium sulfide, cadmium telluride or cadmium selenide
DE1279856B (en) * 1965-07-13 1968-10-10 Licentia Gmbh Process for the production of selenium rectifiers with a small effective rectifier surface
US3437479A (en) * 1967-04-07 1969-04-08 Mitsubishi Electric Corp Contact materials for vacuum switches
US3622712A (en) * 1969-08-29 1971-11-23 Rca Corp Device employing selenium-semiconductor heterojunction
US4518469A (en) * 1984-08-31 1985-05-21 At&T Technologies, Inc. Method of making non-precious metal electrical contacts by electroplating
US4566953A (en) * 1984-12-24 1986-01-28 At&T Technologies, Inc. Pulse plating of nickel-antimony films
US5501154A (en) * 1993-07-06 1996-03-26 Teledyne Industries, Inc. Substantially lead-free tin alloy sheath material for explosive-pyrotechnic linear products
US5333550A (en) * 1993-07-06 1994-08-02 Teledyne Mccormick Selph Tin alloy sheath material for explosive-pyrotechnic linear products
US20040055495A1 (en) * 2002-04-23 2004-03-25 Hannagan Harold W. Tin alloy sheathed explosive device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB482239A (en) * 1935-06-22 1938-03-25 British Thomson Houston Co Ltd Improvements in and relating to dry plate rectifiers
US2334554A (en) * 1942-06-22 1943-11-16 Gen Electric Method of producing blocking layer devices
US2453763A (en) * 1945-07-07 1948-11-16 Ruben Samuel Selenium rectifier and process for making same
FR949640A (en) * 1946-04-19 1949-09-05 Int Standard Electric Corp Selenium current rectifiers and manufacturing processes
GB629869A (en) * 1946-12-26 1949-09-29 British Thomson Houston Co Ltd Improvements in and relating to selenium rectifiers and methods of making the same

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL30044C (en) *
US1869017A (en) * 1928-05-04 1932-07-26 Union Switch & Signal Co Electrical rectifier
DE561548C (en) * 1929-11-10 1932-10-15 Siemens Schuckertwerke Akt Ges Plate-shaped dry rectifier element
DE665416C (en) * 1930-08-13 1938-09-24 Erwin Falkenthal Process for the production of a photocell which itself generates a voltage when exposed to light
DE600410C (en) * 1930-12-02 1934-07-26 Siemens & Halske Akt Ges Contact rectifier element
GB440369A (en) * 1934-06-29 1935-12-30 Gen Electric Co Ltd Improvements in dry plate rectifiers
BE415725A (en) * 1935-06-07 1900-01-01
DE658362C (en) * 1935-12-24 1938-04-01 Ernst Presser Photoelectric cell with a semiconductor layer
DE655648C (en) * 1936-04-09 1938-01-20 Ernst Presser Method of manufacturing photosensitive cells of the layered type
AT153134B (en) * 1936-06-13 1938-04-11 Aeg Process for the manufacture of dry plate rectifiers.
AT155712B (en) * 1936-06-20 1939-03-10 Aeg Process for the production of semiconductor coatings.
NL96218C (en) * 1939-01-11
BE466860A (en) * 1939-10-13
US2412692A (en) * 1941-06-25 1946-12-17 B L Electric Mfg Company Method of forming selenium coated base plates
GB556152A (en) * 1942-03-17 1943-09-22 Westinghouse Brake & Signal Improvements relating to alternating electric current rectifiers of the selenium type
US2356094A (en) * 1943-02-11 1944-08-15 Fed Telephone & Radio Corp Method of treating selenium elements
BE463668A (en) * 1943-03-15 1900-01-01
NL136384B (en) * 1943-05-01 1900-01-01
BE463819A (en) * 1943-05-01
GB565323A (en) * 1943-11-22 1944-11-06 Otto Kurt Kolb Improvements relating to alternating electric current rectifiers of the selenium type
BE464435A (en) * 1944-03-02
GB577585A (en) * 1944-03-02 1946-05-23 Westinghouse Brake & Signal Improvements relating to alternating electric current rectifiers of the selenium type
US2554237A (en) * 1945-10-29 1951-05-22 Westinghouse Electric Corp Rectifier
BE485774A (en) * 1947-11-29 1900-01-01
DE926987C (en) * 1952-06-10 1955-04-28 Falkenthal Process for the production of thin, cohesive, homogeneous, hexagonal selenium layers on a smooth, translucent base, e.g. B. on glass or quartz glass

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB482239A (en) * 1935-06-22 1938-03-25 British Thomson Houston Co Ltd Improvements in and relating to dry plate rectifiers
US2334554A (en) * 1942-06-22 1943-11-16 Gen Electric Method of producing blocking layer devices
FR945988A (en) * 1942-06-22 1949-05-19 Thomson Houston Comp Francaise Manufacturing process of stop layers in dry straighteners
US2453763A (en) * 1945-07-07 1948-11-16 Ruben Samuel Selenium rectifier and process for making same
FR949640A (en) * 1946-04-19 1949-09-05 Int Standard Electric Corp Selenium current rectifiers and manufacturing processes
GB629869A (en) * 1946-12-26 1949-09-29 British Thomson Houston Co Ltd Improvements in and relating to selenium rectifiers and methods of making the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2858239A (en) * 1956-03-13 1958-10-28 Siemens Ag Method for producing selenium rectifiers
US3077386A (en) * 1958-01-02 1963-02-12 Xerox Corp Process for treating selenium

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DE696361C (en) 1940-09-19
CH326740A (en) 1957-12-31
FR864102A (en) 1941-04-19
FR66772E (en) 1957-08-19
GB526482A (en) 1940-09-19
CH224048A (en) 1942-10-31
GB796896A (en) 1958-06-18
GB752751A (en) 1956-07-11
GB806661A (en) 1958-12-31
BE534381A (en)
BE545512A (en)
FR63144E (en) 1955-08-24
CH343031A (en) 1959-12-15
DE892193C (en) 1953-10-05
FR62920E (en) 1955-06-30
DE974772C (en) 1961-04-20
CH324876A (en) 1957-10-15
BE511647A (en)
FR69423E (en) 1958-11-06
DE1056746B (en) 1959-05-06
FR69807E (en) 1958-12-30
NL93669C (en)
BE509989A (en)
FR66041E (en) 1956-04-24
US2867550A (en) 1959-01-06
US2314104A (en) 1943-03-16
NL204119A (en)
DE1015542B (en) 1957-09-12
CH311961A (en) 1955-12-15
US2908592A (en) 1959-10-13

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