DE1116828B - Method for producing a dry rectifier, in particular selenium rectifier, in which an insulating layer is arranged over the selenium at the pressure-stressed points - Google Patents
Method for producing a dry rectifier, in particular selenium rectifier, in which an insulating layer is arranged over the selenium at the pressure-stressed pointsInfo
- Publication number
- DE1116828B DE1116828B DEST10336A DEST010336A DE1116828B DE 1116828 B DE1116828 B DE 1116828B DE ST10336 A DEST10336 A DE ST10336A DE ST010336 A DEST010336 A DE ST010336A DE 1116828 B DE1116828 B DE 1116828B
- Authority
- DE
- Germany
- Prior art keywords
- rectifier
- selenium
- insulating layer
- metal foil
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 14
- 229910052711 selenium Inorganic materials 0.000 title claims description 14
- 239000011669 selenium Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000011888 foil Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 238000011282 treatment Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000002966 varnish Substances 0.000 claims 1
- 230000006378 damage Effects 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Description
Verfahren zur Herstellung eines Trockengleichrichters, insbesondere Selengleichrichters, bei welchem an den druckbeanspruchten Stellen eine isolierende Schicht über dem Selen angeordnet ist Die Erfindung bezieht sich auf Trockengleichrichter, vorzugsweise Selengleichrichter, und verfolgt insbesondere den Zweck, das Gleichrichterelement vor störenden Druckeinflüssen zu schützen.Method for producing a dry rectifier, in particular Selenium rectifier, in which an insulating at the pressure-stressed points Layer above which selenium is arranged The invention relates to dry rectifiers, preferably selenium rectifier, and in particular has the purpose of the rectifier element to protect against disturbing pressure influences.
Bekanntlich werden bei der Verwendung von mehreren Einheiten des Selengleichrichters die einzelnen Platten auf einem isolierten Bolzen aufgereiht. Der Abstand der Gleichrichterplatten wird gegebenenfalls durch Scheiben zwischen den einzelnen Elementen eingestellt. Zur Herstellung des elektrischen Kontaktes 'werden alle Teile aneinandergepreßt. Da der Montagedruck zu einem Kurzschluß durch die Selenschicht führen kann, wird das Selen dort, wo der Montagedruck wirkt, durch eine isolierende Schicht oder einen Isolierkörper geschützt.It is known that when using several units of the selenium rectifier the individual plates lined up on an insulated bolt. The distance between the rectifier plates If necessary, it is adjusted by means of washers between the individual elements. To make electrical contact, all parts are pressed together. Since the assembly pressure can lead to a short circuit through the selenium layer the selenium where the assembly pressure acts, through an insulating layer or a Insulating body protected.
Es hat sich nun gezeigt, daß sich bei den eingelagerten Isolierkörpern, die z. B. als dünne Ringe ausgebildet sein können, bei höheren Temperaturen, wie sie im Betrieb des Gleichrichters vorkommen, störende Nebenerscheinungen, wie Zerstörung bzw. chemische Zersetzung des Isoliermaterials des druckauffangenden Ringes, auftreten können. Außerdem ist durch die Eigenschaften des Selens, z. B. dessen Schmelztemperatur, der Auswahl eines geeigneten Lackes oder Kunststoffes eine gewisse Grenze gesetzt.It has now been shown that with the embedded insulating bodies, the z. B. can be designed as thin rings, at higher temperatures, such as they occur in the operation of the rectifier, disruptive side effects such as destruction or chemical decomposition of the insulating material of the pressure-absorbing ring can. In addition, the properties of selenium, e.g. B. its melting temperature, there is a certain limit to the selection of a suitable paint or plastic.
Die Erfindung bezweckt nun, diesen Mangel zu beheben und besteht darin, daß die den Druck auffangende Isolierschicht vor dem Einbau in das Gleichrichterelement auf eine Metallfolie aufgebracht und durch das jeweils zweckentsprechende Behandlungsverfahren (Aushärten, Einbrennen, Trocknen usw.) in den endgültigen, d. h. praktisch stabilen Zustand übergeführt wird, und dann zusammen mit der Metallfolie in den Gleichrichter eingebaut wird. Die so hergestellte Folie wird dann mit der isolierten Seite gegen das Selen gewendet, auf die Gleichrichterträgerplatte aufgesetzt und ganz oder teilweise mit der Deckelektrode überdeckt. Jetzt etwa nachfolgende Wärmebehandlungen der Platte, z. B. für Formierungszwecke, gehen bei bereits im Endzustand befindlicher Isolierschicht vor sich, so daß störende Einflüsse infolge Lackzerstörung od. dgl. nicht mehr auftreten können.The invention now aims to remedy this deficiency and consists in that the pressure-absorbing insulating layer prior to installation in the rectifier element applied to a metal foil and through the respective appropriate treatment process (Curing, baking, drying, etc.) in the final, d. H. practically stable State is transferred, and then together with the metal foil in the rectifier is installed. The film produced in this way is then with the insulated side against turned the selenium, placed it on the rectifier support plate and wholly or partially covered with the cover electrode. Now about subsequent heat treatments of the plate, z. B. for formation purposes, go when the insulation layer is already in the final state in front of him, so that disruptive influences as a result of paint destruction or the like no longer occur can.
Die Abbildung zeigt im Querschnitt als Ausführungsbeispiel ein kreisförmiges Gleichrichterelement, das auf die mit einem Isolierrohr 2 umhüllte Achse 1 aufgeschoben ist. Das Gleichrichterelement selbst bestelht z. B. aus einer metallischen Grundplatte 3, auf der die Selenschicht 4 aufgebracht ist. Gemäß der Erfindung wird auf dieser die Metallfolie 5 mit der Isolierschicht 5a so aufgebracht, daß die Isolierschicht gegen das Selen gerichtet ist. Die Metallfolie wird dabei von der Deckelelektrode 6 ganz oder teilweise überdeckt. Als Abstandshalter und zur Herstellung der elektrischen Verbindung von Gleichrichterelement zu Gleichrichterelement dient eine Kontaktscheibe 7, die auch federnd ausgebildet sein kann..The figure shows in cross section as an exemplary embodiment a circular rectifier element which is pushed onto the axis 1, which is encased by an insulating tube 2. The rectifier element itself bestelht z. B. from a metallic base plate 3 on which the selenium layer 4 is applied. According to the invention, the metal foil 5 with the insulating layer 5a is applied to this in such a way that the insulating layer is directed against the selenium. The metal foil is completely or partially covered by the cover electrode 6. A contact disk 7, which can also be designed to be resilient, serves as a spacer and to establish the electrical connection between the rectifier element and the rectifier element.
Die Metallfolie 5 kann auch so ausgebildet sein, daß sich auf beiden Seiten eine Isolierschicht 5 a befindet.The metal foil 5 can also be designed so that there is an insulating layer 5 a on both sides.
Im Sinne der Erfindung liegt es ferner, als Folie mit Isolierschicht ein Metall zu verwenden, auf dem durch eine chemische oder elektrochemische Behandlung mindestens einseitig eine isolierende Schicht erzeugt wurde, z. B. eloxiertes Aluminium.It is also within the meaning of the invention as a film with an insulating layer to use a metal on which by a chemical or electrochemical treatment an insulating layer was produced on at least one side, e.g. B. anodized aluminum.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEST10336A DE1116828B (en) | 1955-09-15 | 1955-09-15 | Method for producing a dry rectifier, in particular selenium rectifier, in which an insulating layer is arranged over the selenium at the pressure-stressed points |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEST10336A DE1116828B (en) | 1955-09-15 | 1955-09-15 | Method for producing a dry rectifier, in particular selenium rectifier, in which an insulating layer is arranged over the selenium at the pressure-stressed points |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1116828B true DE1116828B (en) | 1961-11-09 |
Family
ID=7455067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEST10336A Pending DE1116828B (en) | 1955-09-15 | 1955-09-15 | Method for producing a dry rectifier, in particular selenium rectifier, in which an insulating layer is arranged over the selenium at the pressure-stressed points |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1116828B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB526482A (en) * | 1939-01-22 | 1940-09-19 | Standard Telephones Cables Ltd | Improvements in or relating to selenium rectifiers |
-
1955
- 1955-09-15 DE DEST10336A patent/DE1116828B/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB526482A (en) * | 1939-01-22 | 1940-09-19 | Standard Telephones Cables Ltd | Improvements in or relating to selenium rectifiers |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1015542B (en) | Method of manufacturing selenium rectifier plates | |
| DE884847C (en) | Dry contact rectifier or light-sensitive element | |
| DE1116828B (en) | Method for producing a dry rectifier, in particular selenium rectifier, in which an insulating layer is arranged over the selenium at the pressure-stressed points | |
| DE1018512B (en) | Zoned electrical conductors, especially resistors | |
| DE743351C (en) | Electric capacitor | |
| DE1242282B (en) | Process for the production of a carrier for printed circuits consisting of layers of metal and insulating material | |
| DE2436600A1 (en) | METHOD FOR ACHIEVING A SURFACE STABILIZING PROTECTIVE LAYER IN SEMICONDUCTOR COMPONENTS | |
| DE2543079C3 (en) | Process for manufacturing solid electrolytic capacitors | |
| DE976574C (en) | Process for the manufacture of dry rectifier plates | |
| DE924817C (en) | AC dry-type rectifier | |
| DE561548C (en) | Plate-shaped dry rectifier element | |
| AT141833B (en) | Process for the production of electrically conductive layers on non-conductive objects. | |
| DE1189667B (en) | Heatable mirror | |
| DE614333C (en) | resistance | |
| DE977210C (en) | Process for the production of dry rectifiers with an insulating layer which emits gas when heated at the points exposed to pressure | |
| DE886178C (en) | Process for the manufacture of dry rectifiers | |
| DE1924620A1 (en) | Field effect transistor | |
| DE971697C (en) | Process for the manufacture of selenium rectifiers | |
| DE2534468B2 (en) | METHOD OF MANUFACTURING A GRID FOR ELECTRON TUBES | |
| DE2347766A1 (en) | HEATING ELEMENT | |
| DE755073C (en) | Process for the production of electrical capacitors | |
| DE564690C (en) | Collapsible electric irradiation and hot air bath | |
| DE1489091C2 (en) | Encapsulated semiconductor device | |
| AT145324B (en) | Electrode system for indirectly heated discharge tubes. | |
| DE2114624C3 (en) | Electrical component with diagonal stop element and method for its manufacture |