DE884847C - Dry contact rectifier or light-sensitive element - Google Patents

Dry contact rectifier or light-sensitive element

Info

Publication number
DE884847C
DE884847C DEW1630A DEW0001630A DE884847C DE 884847 C DE884847 C DE 884847C DE W1630 A DEW1630 A DE W1630A DE W0001630 A DEW0001630 A DE W0001630A DE 884847 C DE884847 C DE 884847C
Authority
DE
Germany
Prior art keywords
layer
selenium
cadmium sulfide
light
sensitive element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEW1630A
Other languages
German (de)
Inventor
Wayne Elias Blackburn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of DE884847C publication Critical patent/DE884847C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Thermistors And Varistors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)

Description

Die vorliegende Erfindung betrifft einetrTrockenkontakt-Gleichrichter bzw. ein lichtempfindliches Element, das im wesentlichen aus einer Selenlage besteht. . 'The present invention relates to a dry contact rectifier or a photosensitive element consisting essentially of a selenium layer consists. . '

- Die der Erfindung zugrunde liegende Aufgabe _ besteht. darin, einen Selengleichrichter oder ein • Selenelement zu ' schaffen, bei welchem die zur Gleichrichtung oder zur Erzeugung des photoelektrischen Effektes bestimmte! Selenschicht mit einer- The object on which the invention is based exists. therein, a selenium rectifier or a • To create selenium element, in which the for Rectification or to generate the photoelectric effect! Selenium layer with one

ίο weiteren Lage versehen wird, welche einen hohen Widerstand des Stromflusses in der nicht leitenden Richtung vermittelt, wenn das Element dem Einfluß von Wechselstrom unterliegt. Eine solche Lage wird gewöhnlich als Sperrlage oder Sperrschicht bezeichnet.ίο another location is provided, which has a high Resistance to the flow of current in the non-conductive direction is imparted when the element is in the influence of alternating current. Such a layer is usually called a barrier layer or barrier layer designated.

Die Erfindung besteht darin, daß die Oberfläche des Selens bis auf schmale, isolierende Randzonen einen homogenen Überzug aus Kadmiumsulfid besitzt. Darüber hinaus besteht die Erfindung auch in einem Verfahren zur Herstellung eines solchen Elements durch Aufbringen einer Schicht eines Metallsulfids auf eine Selenlage.The invention consists in that the surface of the selenium except for narrow, insulating edge zones has a homogeneous coating of cadmium sulfide. In addition, the invention also consists in a method of making such an element by applying a layer of a Metal sulfide on a selenium layer.

Die Zeichnung zeigt eine Ausführungsform eines Elements, und zwarThe drawing shows an embodiment of an element, namely

Fig. ι im Radialschnitt,
Fig. 2· in Draufsicht.Fig. Ι in radial section,
Fig. 2 · in plan view.

Der in der Zeichnung dargestellte Gleichrichter besteht aus einer Basiisplatte 1, welche durch Stahl gebildet sein kann. Diese Stahlplatte wird mit dem Sandstrahlgebläse behandelt und sodann nickelplattiert. Die Platte 1 ist mit einem zentralen Loch 2 versehen, mit Hilfe dessen sie auf eine rotierende Welle aufgesetzt werden kann. Die Platte und die Welle werden während der Drehung in geschmolzenes Selen getaucht und sodann wieder herausgezogen. Zufolge der Wirkung der Zentrifugalkraft wird alles überflüssige Selen abgeschleudert mit Ausnahme einer dünnen, gleichmäßigen Selenschicht 3 auf der Oberfläche der Platte 1. Die Oberfläche der Selenschicht wird mit einer Kadmiumsulfidschicht 4 überzogen, und zwar durch Vierdampf ung und Kondensation des Kadmiumsulfids. Dieses Überziehen mit Kadmiumsulfid erfolgt in der Hitze in geschlossenem Raum, in welchem ein Unterdruck von etwa Y40 des atmosphärischen . Druckes herrscht. Die so mit Kadrhiumsulfid überzogene Einheit wird einer Temperatur von 1850C ausgesetzt, und es wird sodann eine Schicht 5 aufgebracht aus einem leitenden Stoff von niedrigem Schmelzpunkt, wie z. B. metallischem Kadmium oder einer Kadmiumlegierung und Zinn. Es ist zweckmäßig, die metallisch leitende Schicht zunächst auf die Kadmiumsulfidschicht aufzubringen und erst dann die Wärmebehandlung bei einer Temperatur von 1850C vorzunehmen. Man wird die Einheit beispielsweise zwischen 6 und 16 Stunden einer solchen Temperatur aussetzen. Der in beschriebener Weise hergestellte Gleichrichter oder das elektrische Element kann in üblicher Weise in den Stromkreis eingeschaltet werden.The rectifier shown in the drawing consists of a base plate 1, which can be formed by steel. This steel plate is sandblasted and then nickel-plated. The plate 1 is provided with a central hole 2 by means of which it can be placed on a rotating shaft. The plate and the shaft are immersed in molten selenium during rotation and then withdrawn again. As a result of the effect of the centrifugal force, all superfluous selenium is thrown off with the exception of a thin, even layer of selenium 3 on the surface of the plate 1. The surface of the selenium layer is coated with a cadmium sulfide layer 4, namely by four vaporization and condensation of the cadmium sulfide. This coating with cadmium sulfide takes place in the heat in a closed room, in which a negative pressure of about Y 40 of the atmospheric. There is pressure. The thus coated with Kadrhiumsulfid unit is exposed to a temperature of 185 0 C and it is then a layer 5 made of a conductive material of low melting point such. B. metallic cadmium or a cadmium alloy and tin. It is convenient to first apply the metallic conductive layer on the cadmium sulfide layer, and only then carry out the heat treatment at a temperature of 185 0 C. The unit will be exposed to such a temperature for between 6 and 16 hours, for example. The rectifier produced in the manner described or the electrical element can be switched into the circuit in the usual way.

Die Sperrlage, hergestellt auf der Selenunterlage im Sinne der vorliegenden Erfindung zeichnet sich durch außerordentlichen Widerstand in der nicht leitenden Richtung aus. In der Gegenrichtung setzt die Schicht dem Strom keinen hohen Widerstand entgegen. Eine Selenschicht mit einer erfindungsgemäßen Sperrschicht oder Sperrlage unterliegt keinerlei chemischen Reaktionen während des praktischen Gebrauchs, so daß das Element seine elektrischen Eigenschaften nicht ändert. Es altert nicht.The barrier layer produced on the selenium pad within the meaning of the present invention is distinguished due to extraordinary resistance in the non-conductive direction. Set in the opposite direction the layer does not have a high resistance to the current. A selenium layer with one according to the invention The barrier layer or barrier layer is not subject to any chemical reactions during the practical So that the element does not change its electrical properties. It doesn't age.

Claims (4)

PATENTANSPRÜCHE:PATENT CLAIMS: 1. Aus Seingestehendes elektrisches Element, dadurch gekennzeichnet, daß die Oberfläche des Selens bis auf schmale, isolierende Randzonen einen homogenen Überzug aus Kadmiumsulfid besitzt.1. Electrical element made of self, characterized in that the surface of the selenium except for narrow, insulating edge zones has a homogeneous coating of cadmium sulfide. 2. Elektrisches Element nach Anspruch 1, dadurch gekennzeichnet, daß die Kadmiumsulfid-Schicht eine leitende Schicht, z. B. Kadmium, als Elektrode trägt.2. Electrical element according to claim 1, characterized in that the cadmium sulfide layer a conductive layer, e.g. B. cadmium, carries as an electrode. 3. Verfahren zur Herstellung von Sperrschichtelementen auf einer Selenbasis nach Anspruch i, dadurch gekennzeichnet, daß auf die Oberfläche der Selenschicht eine homogene Schicht von Kadmiumsulfid aufgebracht wird und daß das Element vor dem Aufbringen einer leitenden Deckschicht oder im Anschluß daran bei ungefähr 185° getempert wird.3. A method for producing barrier elements based on selenium according to claim i, characterized in that on the surface of the selenium layer a homogeneous Layer of cadmium sulfide is applied and that the element before applying a conductive cover layer or is annealed thereafter at about 185 °. 4. Verfahren nach Anspruch 3, dadurch gekennzeichnet, daß man Kadmiumsulfid durch Verdampfung auf einer Oberfläche von amorphem Selen niederschlägt.4. The method according to claim 3, characterized in that cadmium sulfide by Evaporation precipitates on a surface of amorphous selenium.
DEW1630A 1943-12-15 1950-04-13 Dry contact rectifier or light-sensitive element Expired DE884847C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US514371A US2488369A (en) 1943-12-15 1943-12-15 Selenium rectifier

Publications (1)

Publication Number Publication Date
DE884847C true DE884847C (en) 1953-07-30

Family

ID=24046859

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW1630A Expired DE884847C (en) 1943-12-15 1950-04-13 Dry contact rectifier or light-sensitive element

Country Status (6)

Country Link
US (1) US2488369A (en)
CH (1) CH248334A (en)
DE (1) DE884847C (en)
FR (1) FR988428A (en)
GB (1) GB596585A (en)
NL (1) NL70500C (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1032669B (en) * 1953-03-17 1958-06-19 Haloid Co Photosensitive material for generating a latent charge image
DE1034290B (en) * 1956-02-07 1958-07-17 Zeiss Jena Veb Carl Process for increasing the sensitivity, in particular the ultra-red sensitivity, of selenium barrier cells sensitized for the ultra-red range
DE1046794B (en) * 1955-02-15 1958-12-18 Emi Ltd Process for forming a photoconductive layer on a carrier layer
DE1090768B (en) * 1957-05-11 1960-10-13 Licentia Gmbh Process for the production of selenium dry rectifiers
DE1097573B (en) * 1954-07-08 1961-01-19 Vickers Inc Selenium semiconductor device and process for its production

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE968580C (en) * 1948-10-02 1958-03-06 Standard Elektrik Ag Process for the manufacture of dry rectifiers
DE973817C (en) * 1951-03-05 1960-06-15 Licentia Gmbh Method of manufacturing a dry rectifier
US2871149A (en) * 1955-05-02 1959-01-27 Sprague Electric Co Semiconductor method
US2886434A (en) * 1955-06-06 1959-05-12 Horizons Inc Protected photoconductive element and method of making same
US3023121A (en) * 1959-08-13 1962-02-27 Robert L Dyar Method of constructing abrasive coated cylinders

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB439774A (en) * 1934-03-21 1935-12-13 British Thomson Houston Co Ltd Improvements relating to photo-electric cells and methods of manufacturing the same
DE640567C (en) * 1966-09-08 1937-01-07 Siemens Schuckertwerke Akt Ges Dry plate rectifier
CH206837A (en) * 1937-11-01 1939-08-31 Hermes Patentverwertungs Gmbh Process for the manufacture of selenium rectifiers.
US2193610A (en) * 1938-02-17 1940-03-12 Westinghouse Electric & Mfg Co Selenium contact electrode
CH213808A (en) * 1938-10-24 1941-03-15 Sueddeutsche Apparate Fabrik G Process for the manufacture of barrier photocells.
US2279187A (en) * 1939-01-11 1942-04-07 Union Switch & Signal Co Alternating electric current rectifier of the selenium type
DE760089C (en) * 1940-04-24 1954-08-16 Siemens Schuckertwerke A G Process for improving the blocking effect of selenium rectifiers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2121603A (en) * 1936-05-30 1938-06-21 Westinghouse Electric & Mfg Co Method of producing selenium rectifiers
US2221596A (en) * 1938-01-22 1940-11-12 Fides Gmbh Method of manufacturing dry rectifiers
FR851651A (en) * 1938-09-21 1940-01-12 Westinghouse Freins & Signaux Improvements in the fabrication of asymmetric conductivity devices

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB439774A (en) * 1934-03-21 1935-12-13 British Thomson Houston Co Ltd Improvements relating to photo-electric cells and methods of manufacturing the same
CH206837A (en) * 1937-11-01 1939-08-31 Hermes Patentverwertungs Gmbh Process for the manufacture of selenium rectifiers.
US2195725A (en) * 1937-11-01 1940-04-02 Hermes Patentverwertungs Gmbh Method of manufacturing selenium rectifiers
US2193610A (en) * 1938-02-17 1940-03-12 Westinghouse Electric & Mfg Co Selenium contact electrode
CH213808A (en) * 1938-10-24 1941-03-15 Sueddeutsche Apparate Fabrik G Process for the manufacture of barrier photocells.
US2279187A (en) * 1939-01-11 1942-04-07 Union Switch & Signal Co Alternating electric current rectifier of the selenium type
DE760089C (en) * 1940-04-24 1954-08-16 Siemens Schuckertwerke A G Process for improving the blocking effect of selenium rectifiers
DE640567C (en) * 1966-09-08 1937-01-07 Siemens Schuckertwerke Akt Ges Dry plate rectifier

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1032669B (en) * 1953-03-17 1958-06-19 Haloid Co Photosensitive material for generating a latent charge image
DE1097573B (en) * 1954-07-08 1961-01-19 Vickers Inc Selenium semiconductor device and process for its production
DE1046794B (en) * 1955-02-15 1958-12-18 Emi Ltd Process for forming a photoconductive layer on a carrier layer
DE1034290B (en) * 1956-02-07 1958-07-17 Zeiss Jena Veb Carl Process for increasing the sensitivity, in particular the ultra-red sensitivity, of selenium barrier cells sensitized for the ultra-red range
DE1090768B (en) * 1957-05-11 1960-10-13 Licentia Gmbh Process for the production of selenium dry rectifiers

Also Published As

Publication number Publication date
GB596585A (en) 1948-01-07
CH248334A (en) 1947-04-30
NL70500C (en) 1900-01-01
FR988428A (en) 1951-08-27
US2488369A (en) 1949-11-15

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