GB439774A - Improvements relating to photo-electric cells and methods of manufacturing the same - Google Patents
Improvements relating to photo-electric cells and methods of manufacturing the sameInfo
- Publication number
- GB439774A GB439774A GB8392/35A GB839235A GB439774A GB 439774 A GB439774 A GB 439774A GB 8392/35 A GB8392/35 A GB 8392/35A GB 839235 A GB839235 A GB 839235A GB 439774 A GB439774 A GB 439774A
- Authority
- GB
- United Kingdom
- Prior art keywords
- film
- selenium
- ring
- cadmium
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 5
- 229910052711 selenium Inorganic materials 0.000 abstract 5
- 239000011669 selenium Substances 0.000 abstract 5
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- 229910052793 cadmium Inorganic materials 0.000 abstract 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052697 platinum Inorganic materials 0.000 abstract 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 239000004922 lacquer Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
439,774. Light - - sensitive cells. BRITISH THOMSON-HOUSTON CO., Ltd., Crown House, Aldwych, London. March 18, 1935, No. 8392. Convention date, March 21, 1934. [Class 40 (iii)] Relates to a lightsensitive cell comprising a metal plate coated with a thin film of selenium rendered lightsensitive by heat treatment and having a transparent film of a non- oxidizable metal deposited thereon and consists in coating the selenium film with a film of a metal of the second group of the periodic table of the elements, e.g. cadmium, prior to its being coated with the final film of non- oxidizable metal. As shown, the light sensi. tive unit comprises an iron or nickel base plate 8 on to the roughened surface of which selenium which has been evaporated is condensed as a thin layer 9, the coated plate then being heat treated so as to convert the selenium into a metallic light-sensitive form. A film of cadmium 10 is then sputtered on the selenium surface and finally a film of platinum 16 is sputtered on the cadmium film. The unit so formed is mounted within a casing 1 of insulating material which is closed at the back by a cover 5 and is preferably provided with a front cover 15 of glass. This front cover may, however, be dispensed with in which case the platinum layer is covered with a transparent lacquer except at the place where electrical contact is to be made. The casing 1 carries a pair of contact pins 6 through which conductors 7 are threaded, one of the conductors contacting with the disc 8 whilst the other is wound several times about a slotted cardboard ring 11, and has its free end secured between this ring and a tinfoil ring 13. The ring 11 is positioned between the glass cover 15 and the platinum layer 16.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US439774XA | 1934-03-21 | 1934-03-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB439774A true GB439774A (en) | 1935-12-13 |
Family
ID=21929887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8392/35A Expired GB439774A (en) | 1934-03-21 | 1935-03-18 | Improvements relating to photo-electric cells and methods of manufacturing the same |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR787563A (en) |
GB (1) | GB439774A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE884847C (en) * | 1943-12-15 | 1953-07-30 | Westinghouse Electric Corp | Dry contact rectifier or light-sensitive element |
DE933286C (en) * | 1942-05-20 | 1955-09-22 | Electrocell Ges M B H Falkenth | Process for the production of layered, current-supplying photoelectric cells |
DE1114251B (en) * | 1953-05-23 | 1961-09-28 | Siemens Ag | Process for the manufacture of selenium rectifiers |
-
1935
- 1935-03-18 GB GB8392/35A patent/GB439774A/en not_active Expired
- 1935-03-20 FR FR787563D patent/FR787563A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE933286C (en) * | 1942-05-20 | 1955-09-22 | Electrocell Ges M B H Falkenth | Process for the production of layered, current-supplying photoelectric cells |
DE884847C (en) * | 1943-12-15 | 1953-07-30 | Westinghouse Electric Corp | Dry contact rectifier or light-sensitive element |
DE1114251B (en) * | 1953-05-23 | 1961-09-28 | Siemens Ag | Process for the manufacture of selenium rectifiers |
Also Published As
Publication number | Publication date |
---|---|
FR787563A (en) | 1935-09-25 |
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