GB485528A - Improvements in and relating to light sensitive devices and methods of manufacturing the same - Google Patents

Improvements in and relating to light sensitive devices and methods of manufacturing the same

Info

Publication number
GB485528A
GB485528A GB27401/37A GB2740137A GB485528A GB 485528 A GB485528 A GB 485528A GB 27401/37 A GB27401/37 A GB 27401/37A GB 2740137 A GB2740137 A GB 2740137A GB 485528 A GB485528 A GB 485528A
Authority
GB
United Kingdom
Prior art keywords
cadmium
sputtering
bell jar
commenced
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB27401/37A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Thomson Houston Co Ltd
Original Assignee
British Thomson Houston Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Thomson Houston Co Ltd filed Critical British Thomson Houston Co Ltd
Publication of GB485528A publication Critical patent/GB485528A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

485,528. Depositing metals by electric discharge. BRITISH THOMSON-HOUSTON CO., Ltd. Oct. 8, 1937, No. 27401. Convention date, May 29. Addition to 439,774, [Group XL]. [Class 41] [Also in Group XL] In light-sensitive devices of the type described in the parent Specification, the additional step of first coating the selenium with a metal such as cadmium, by sputtering, is commenced in an atmosphere containing water vapour and completed in a dry atmosphere. The cell is placed in a holder 26 which is adapted to be moved by means of a magnet 34 from outside the bell jar 12, so that it comes underneath the cadmium electrode 33 or platinum electrode 32. The plate 20 acts as a partition to prevent sputtered deposits from one cathode being deposited on the other. The bell jar is evacuated and argon at a pressure of about 240 microns is introduced and the sputtering on of the cadmium layer in one-second flashes separated by twenty-second intervals is commenced. After one to five flashes liquid air is poured into the re-entrant bulb 14 causing water vapour inside the bell jar to condense. When the cadmium layer permits 30 per cent of the incident light to pass, the platinum layer is sputtered on for about three-fifths the length of time of the sputtering of the cadmium.
GB27401/37A 1937-05-29 1937-10-08 Improvements in and relating to light sensitive devices and methods of manufacturing the same Expired GB485528A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US145539A US2189580A (en) 1937-05-29 1937-05-29 Method of making a photoelectric cell

Publications (1)

Publication Number Publication Date
GB485528A true GB485528A (en) 1938-05-20

Family

ID=22513564

Family Applications (1)

Application Number Title Priority Date Filing Date
GB27401/37A Expired GB485528A (en) 1937-05-29 1937-10-08 Improvements in and relating to light sensitive devices and methods of manufacturing the same

Country Status (2)

Country Link
US (1) US2189580A (en)
GB (1) GB485528A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE961467C (en) * 1952-04-26 1957-04-04 Standard Elektrik Ag Process for the manufacture of selenium rectifiers

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE472808A (en) * 1942-10-02
US2452577A (en) * 1943-10-07 1948-11-02 Standard Telephones Cables Ltd Dry rectifier element and method of manufacture
US2537256A (en) * 1946-07-24 1951-01-09 Bell Telephone Labor Inc Light-sensitive electric device
US2537257A (en) * 1947-01-17 1951-01-09 Bell Telephone Labor Inc Light-sensitive electric device
US2636855A (en) * 1948-03-25 1953-04-28 Hilger & Watts Ltd Method of producing photoconductive coatings
US2781282A (en) * 1953-09-21 1957-02-12 Libbey Owens Ford Glass Co Method and apparatus for masking support bodies
GB830391A (en) * 1955-10-28 1960-03-16 Edwards High Vacuum Ltd Improvements in or relating to cathodic sputtering of metal and dielectric films
US2899372A (en) * 1955-12-30 1959-08-11 Method of manufacturing photoconductive
US2917442A (en) * 1955-12-30 1959-12-15 Electronique & Automatisme Sa Method of making electroluminescent layers
US3324019A (en) * 1962-12-11 1967-06-06 Schjeldahl Co G T Method of sputtering sequentially from a plurality of cathodes
GB1054660A (en) * 1963-09-16
US3477935A (en) * 1966-06-07 1969-11-11 Union Carbide Corp Method of forming thin film resistors by cathodic sputtering
US3506556A (en) * 1968-02-28 1970-04-14 Ppg Industries Inc Sputtering of metal oxide films in the presence of hydrogen and oxygen
US3678324A (en) * 1970-06-17 1972-07-18 James L Leonard Cathode ray tube having standby cathode assembly on rotatable support
US3901783A (en) * 1973-02-09 1975-08-26 Int Standard Electric Corp Method of producing selenium charge electrophotographic recording plates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE961467C (en) * 1952-04-26 1957-04-04 Standard Elektrik Ag Process for the manufacture of selenium rectifiers

Also Published As

Publication number Publication date
US2189580A (en) 1940-02-06

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