GB830391A - Improvements in or relating to cathodic sputtering of metal and dielectric films - Google Patents

Improvements in or relating to cathodic sputtering of metal and dielectric films

Info

Publication number
GB830391A
GB830391A GB30944/55A GB3094455A GB830391A GB 830391 A GB830391 A GB 830391A GB 30944/55 A GB30944/55 A GB 30944/55A GB 3094455 A GB3094455 A GB 3094455A GB 830391 A GB830391 A GB 830391A
Authority
GB
United Kingdom
Prior art keywords
sputtering
cathode
source
cathodes
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30944/55A
Inventor
Leslie Arthur Holland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Edwards High Vacuum Ltd
Original Assignee
Edwards High Vacuum Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Edwards High Vacuum Ltd filed Critical Edwards High Vacuum Ltd
Priority to GB30944/55A priority Critical patent/GB830391A/en
Priority to US617867A priority patent/US2886502A/en
Priority to FR1167761D priority patent/FR1167761A/en
Priority to DEE13491A priority patent/DE1116015B/en
Publication of GB830391A publication Critical patent/GB830391A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/146—Sheet resistance, dopant parameters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Filters (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

830.391. Coating by vapour deposition. EDWARDS HIGH VACUUM Ltd. Oct. 22, 1956 [Oct. 28, 1955], No. 30944/55. Class 82(2) An apparatus for cathode sputtering a film of a given substance or substances on to a workpiece 7 comprises a vacuum chamber 1, a workpiece-supporting table 3 in said chamber adapted for rotation about a central perpendicular axis, a sector-shaped cathode or cathodes 5, 6 comprising said substance or substances respectively and supported in the vacuum chamber and spaced from said table along its axis of rotation, means for connecting the cathode(s) to a source of high potential, and means for effecting rotation of the table. The vacuum chamber may also contain a vapour source 11 for depositing films by evaporation. The term "cathode" is defined to include a pair of electrodes connected respectively to each pole of a single-phase A.C. source, and three electrodes connected respectively to the poles of a three-phase A.C. source. The enclosed angle # of the sector-shaped cathodes may vary from 10 to 180 degrees. Further, the cathodes may be shaped, e.g. to the forms 17 and 18 shown in Figs. 4a and 4b respectively. The following applications are disclosed: (a) the sputtering of iron oxide on to sun-glasses followed by the evaporation of magnesium fluoride or silicon monoxide, (b) the production of multi-layer interference filters incorporating alternate layers of reactively sputtered titanium oxide and evaporated magnesium fluoride, (c) the use of alternate layers of sputtered bismuth oxide and evaporated magnesium fluoride in interference filters and on the surfaces of imitation precious stones, and (d) the production of transparent conducting coatings on glass by reactively sputtering a metal oxide film from one cathode and then sputtering a gold film from another cathode. Reference is also made to the sputtering of nickel and reactive sputtering of cadmium oxide. Specification 610,529 is referred to.
GB30944/55A 1955-10-28 1955-10-28 Improvements in or relating to cathodic sputtering of metal and dielectric films Expired GB830391A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB30944/55A GB830391A (en) 1955-10-28 1955-10-28 Improvements in or relating to cathodic sputtering of metal and dielectric films
US617867A US2886502A (en) 1955-10-28 1956-10-23 Cathodic sputtering of metal and dielectric films
FR1167761D FR1167761A (en) 1955-10-28 1956-10-27 Method and apparatus for cathodic projection of metal and dielectric films
DEE13491A DE1116015B (en) 1955-10-28 1956-10-27 Method and device for cathodic spraying of a film onto a workpiece

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB30944/55A GB830391A (en) 1955-10-28 1955-10-28 Improvements in or relating to cathodic sputtering of metal and dielectric films

Publications (1)

Publication Number Publication Date
GB830391A true GB830391A (en) 1960-03-16

Family

ID=10315555

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30944/55A Expired GB830391A (en) 1955-10-28 1955-10-28 Improvements in or relating to cathodic sputtering of metal and dielectric films

Country Status (4)

Country Link
US (1) US2886502A (en)
DE (1) DE1116015B (en)
FR (1) FR1167761A (en)
GB (1) GB830391A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0216919A1 (en) * 1985-05-02 1987-04-08 Hewlett Packard Co Method and target for sputter depositing thin films.
EP0429905A2 (en) * 1989-11-30 1991-06-05 Siemens Aktiengesellschaft Process for reducing the reflectivity of sputtered layers

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3039952A (en) * 1959-03-25 1962-06-19 Western Electric Co Apparatus for depositing films on article surfaces
US3220938A (en) * 1961-03-09 1965-11-30 Bell Telephone Labor Inc Oxide underlay for printed circuit components
US3257305A (en) * 1961-08-14 1966-06-21 Texas Instruments Inc Method of manufacturing a capacitor by reactive sputtering of tantalum oxide onto a silicon substrate
BE634012A (en) * 1961-10-03
US3271488A (en) * 1961-11-21 1966-09-06 Itt Method of making masks for vapor deposition of electrodes
US3324019A (en) * 1962-12-11 1967-06-06 Schjeldahl Co G T Method of sputtering sequentially from a plurality of cathodes
US3450581A (en) * 1963-04-04 1969-06-17 Texas Instruments Inc Process of coating a semiconductor with a mask and diffusing an impurity therein
GB1054660A (en) * 1963-09-16
LU45647A1 (en) * 1964-03-12 1965-09-13
US3351543A (en) * 1964-05-28 1967-11-07 Gen Electric Process of coating diamond with an adherent metal coating using cathode sputtering
US3369989A (en) * 1964-07-22 1968-02-20 Ibm Cathode sputtering apparatus including precision temperature control of substrate
US3457614A (en) * 1964-09-29 1969-07-29 Gen Instrument Corp Process and apparatus for making thin film capacitors
US3716472A (en) * 1966-02-04 1973-02-13 Siemens Ag Cathode atomization apparatus
DE1515314C2 (en) * 1966-02-04 1973-12-13 Siemens Ag, 1000 Berlin U. 8000 Muenchen Device for cathode sputtering with ring discharge
US3616401A (en) * 1966-06-30 1971-10-26 Texas Instruments Inc Sputtered multilayer ohmic molygold contacts for semiconductor devices
US3350293A (en) * 1966-11-14 1967-10-31 Components Inc Passivating silicon semiconductor devices with sputtered tungsten oxide at low temperatures
US3507248A (en) * 1967-06-15 1970-04-21 Ibm Vacuum evaporation coating apparatus including means for precleaning substrates by ion bombardment
US3660180A (en) * 1969-02-27 1972-05-02 Ibm Constrainment of autodoping in epitaxial deposition
GB1446848A (en) * 1972-11-29 1976-08-18 Triplex Safety Glass Co Sputtered metal oxide coatings articles comprising transparent electrically-conductive coatings on non-conducting substrates
US4166018A (en) * 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
US4142958A (en) * 1978-04-13 1979-03-06 Litton Systems, Inc. Method for fabricating multi-layer optical films
DE3306870A1 (en) * 1983-02-26 1984-08-30 Leybold-Heraeus GmbH, 5000 Köln DEVICE FOR PRODUCING LAYERS WITH ROTATIONALLY SYMMETRIC THICK PROFILE BY CATODENSIONING
US4797527A (en) * 1985-02-06 1989-01-10 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Electrode for electric discharge machining and method for producing the same
US6328856B1 (en) 1999-08-04 2001-12-11 Seagate Technology Llc Method and apparatus for multilayer film deposition utilizing rotating multiple magnetron cathode device
JP4167833B2 (en) * 2002-01-24 2008-10-22 株式会社ユーテック Film forming apparatus, oxide thin film forming substrate and manufacturing method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US929017A (en) * 1906-02-14 1909-07-27 James K Reynard Metal-depositing apparatus.
DE542404C (en) * 1929-03-06 1932-01-23 Steatit Magnesia Akt Ges Process for the production of high value resistors
US1917271A (en) * 1932-01-28 1933-07-11 James G Potter Method of forming coatings of metal and product thereof
US2160981A (en) * 1935-10-19 1939-06-06 O'brien Brian Method and apparatus for producing thin wedges
US2189580A (en) * 1937-05-29 1940-02-06 Gen Electric Method of making a photoelectric cell
GB541739A (en) * 1940-07-16 1941-12-09 Gabor Adam Veszi Improvements in or relating to photo electric cells
US2373639A (en) * 1943-01-23 1945-04-10 Bausch & Lomb Method and apparatus for forming films
FR1107451A (en) * 1949-11-08 1956-01-03 Materiel Telephonique Improvements in the manufacture of dry straighteners, in particular selenium

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0216919A1 (en) * 1985-05-02 1987-04-08 Hewlett Packard Co Method and target for sputter depositing thin films.
EP0216919A4 (en) * 1985-05-02 1988-05-10 Hewlett Packard Co Method and target for sputter depositing thin films.
EP0429905A2 (en) * 1989-11-30 1991-06-05 Siemens Aktiengesellschaft Process for reducing the reflectivity of sputtered layers
EP0429905A3 (en) * 1989-11-30 1992-09-16 Siemens Aktiengesellschaft Process for reducing the reflectivity of sputtered layers

Also Published As

Publication number Publication date
FR1167761A (en) 1958-11-28
DE1116015B (en) 1961-10-26
US2886502A (en) 1959-05-12

Similar Documents

Publication Publication Date Title
GB830391A (en) Improvements in or relating to cathodic sputtering of metal and dielectric films
GB1489807A (en) Method for coating a substrate
GB1325961A (en) Feroelectric device and process of manufacturing same
KR880011364A (en) Sputtered films of bismuth / tin oxides and articles comprising such films
GB974667A (en) Improvements in and relating to the manufacture of multi-layer thin film electrical devices
GB1212114A (en) Negative-temperature-coefficient resistors
GB1496590A (en) Sputtered dielectric thin films
JPS569249A (en) Electrically conductive infrared shielding glass and its manufacture
GB1408883A (en) Production of tio2-layers by vapour deposition
GB1349833A (en) Production of thin films of tantalum
GB1328298A (en) Production of a highly refractive oxide layer permeable to lihgt
GB1284781A (en) Depositing layers by cathode sputtering
GB1251193A (en)
GB620405A (en) Improvements in or relating to compact electric condensers
US3589994A (en) Sputtering technique
JPH03240973A (en) Surface treatment
JPS5935676A (en) External parts for portable watch
JPH04280967A (en) Method for forming transparent electric conductive film
JPS613879A (en) Sputtering device
GB1299945A (en) Sputtering apparatus
JPH046243B2 (en)
HOFFMEISTER et al. Ion sputtering for manufacturing thin layers(copper on glass substrate with 70 to 100 mm diameter)
GB915568A (en) Improvements in or relating to the formation of thin films
Garzino New Techniques for the Non-Aqueous Coating of Materials Using Vapour Phase Plasma Systems
GB1183979A (en) Improvements in or relating to Hard, Well Adhering and Practically Non-Absorbent Thin Layers