NL6602553A - - Google Patents

Info

Publication number
NL6602553A
NL6602553A NL6602553A NL6602553A NL6602553A NL 6602553 A NL6602553 A NL 6602553A NL 6602553 A NL6602553 A NL 6602553A NL 6602553 A NL6602553 A NL 6602553A NL 6602553 A NL6602553 A NL 6602553A
Authority
NL
Netherlands
Prior art keywords
silicon
cathode
substrate
conductivity type
produced
Prior art date
Application number
NL6602553A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6602553A publication Critical patent/NL6602553A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A semi-conductor device containing an abrupt PN junction is produced by sputtering silicon of one conductivity type on to silicon of the opposite conductivity type. The process takes place in an inert atmosphere and is stated to result in an epitaxial deposit. Fig. 1 (not shown) depicts the sputtering chamber (10) in which a silicon substrate (20) is placed between an anode (16) and a cathode (13), the latter consisting of the silicon to be deposited. In the chamber atmosphere - which consists of an inert gas such as Argon containing not more than 0.002% oxygen - a glow discharge is set up and the positive gas ions thus produced bombard the silicon cathode to release silicon particles which are sputtered on to the substrate. A nickel mask may be placed between the cathode and the substrate during the deposition. A similar mask may be used in the subsequent provision of evaporated-on aluminium electrodes.
NL6602553A 1965-04-21 1966-02-28 NL6602553A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44985565A 1965-04-21 1965-04-21

Publications (1)

Publication Number Publication Date
NL6602553A true NL6602553A (en) 1966-10-24

Family

ID=23785755

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6602553A NL6602553A (en) 1965-04-21 1966-02-28

Country Status (3)

Country Link
DE (1) DE1544322A1 (en)
GB (1) GB1077320A (en)
NL (1) NL6602553A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2142045B (en) * 1983-06-15 1987-12-31 British Telecomm Growth of semiconductors
GB8421162D0 (en) * 1984-08-21 1984-09-26 British Telecomm Growth of semi-conductors

Also Published As

Publication number Publication date
GB1077320A (en) 1967-07-26
DE1544322A1 (en) 1970-02-26

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