GB1118758A - Improvements in or relating to the sputtering of conductive materials - Google Patents

Improvements in or relating to the sputtering of conductive materials

Info

Publication number
GB1118758A
GB1118758A GB51035/66A GB5103566A GB1118758A GB 1118758 A GB1118758 A GB 1118758A GB 51035/66 A GB51035/66 A GB 51035/66A GB 5103566 A GB5103566 A GB 5103566A GB 1118758 A GB1118758 A GB 1118758A
Authority
GB
United Kingdom
Prior art keywords
conductive material
sputtered
sputtering
sio2
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB51035/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1118758A publication Critical patent/GB1118758A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/085—Vapour deposited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Abstract

A conductive material, e.g. Al, Cu, Si, Ge or "Nichrome" (Registered Trade Mark), is radio frequency sputtered to deposit a film of the sputtered particles on to a substrate such as a wafer of semiconductor material e.g. Si in a vacuum chamber enclosing a cathode comprising the conductive material and an anode supporting the substrate and containing gas capable of supporting a glow discharge stimulated by RF power applied to the electrodes through a capacitor. The gas may be inert e.g. A or Ne, or reactive e.g. O2, N2 or H2 with the conductive material; a mixture of gases may be used, e.g. 90%A-10%O2. Films of Al2 O3, CdS, SiO2 or TaN may be deposited by reactive sputtering. For example, a passivating film of SiO2 may be deposited by reactive sputtering Si in O2 over a sputtered contact layer of A1 on an oxide coated Si wafer.
GB51035/66A 1965-12-20 1966-11-15 Improvements in or relating to the sputtering of conductive materials Expired GB1118758A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US51485365A 1965-12-20 1965-12-20
US51482765A 1965-12-20 1965-12-20

Publications (1)

Publication Number Publication Date
GB1118758A true GB1118758A (en) 1968-07-03

Family

ID=27058328

Family Applications (2)

Application Number Title Priority Date Filing Date
GB51035/66A Expired GB1118758A (en) 1965-12-20 1966-11-15 Improvements in or relating to the sputtering of conductive materials
GB51467/66A Expired GB1118759A (en) 1965-12-20 1966-11-17 Improvements in or relating to the sputtering of dielectric materials

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB51467/66A Expired GB1118759A (en) 1965-12-20 1966-11-17 Improvements in or relating to the sputtering of dielectric materials

Country Status (9)

Country Link
US (1) US3525680A (en)
JP (1) JPS4327930B1 (en)
BE (1) BE690690A (en)
CH (2) CH471241A (en)
DE (2) DE1515309B2 (en)
FR (1) FR1505162A (en)
GB (2) GB1118758A (en)
NL (1) NL6617765A (en)
SE (1) SE334083B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2128813A (en) * 1982-09-30 1984-05-02 Dale Electronics Thin film resistor
GB2140460A (en) * 1983-05-27 1984-11-28 Dowty Electronics Ltd Insulated metal substrates

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3968018A (en) * 1969-09-29 1976-07-06 Warner-Lambert Company Sputter coating method
US3916523A (en) * 1969-09-29 1975-11-04 Warner Lambert Co Coated razor blade
US3904506A (en) * 1972-11-13 1975-09-09 Shatterproof Glass Corp Apparatus for continuous production of sputter-coated glass products
US3860507A (en) * 1972-11-29 1975-01-14 Rca Corp Rf sputtering apparatus and method
US3925182A (en) * 1973-09-25 1975-12-09 Shatterproof Glass Corp Method for continuous production of sputter-coated glass products
US4170662A (en) * 1974-11-05 1979-10-09 Eastman Kodak Company Plasma plating
US4043889A (en) * 1976-01-02 1977-08-23 Sperry Rand Corporation Method of and apparatus for the radio frequency sputtering of a thin film
FR2371524A1 (en) * 1976-11-18 1978-06-16 Alsthom Atlantique PROCESS FOR DEPOSITING A THIN LAYER BY DECOMPOSITION OF A GAS IN A PLASMA
JPS6037188B2 (en) * 1981-08-27 1985-08-24 三菱マテリアル株式会社 sputtering equipment
US4693805A (en) * 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
AU2003195A (en) * 1994-06-21 1996-01-04 Boc Group, Inc., The Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3021271A (en) * 1959-04-27 1962-02-13 Gen Mills Inc Growth of solid layers on substrates which are kept under ion bombardment before and during deposition
US3233137A (en) * 1961-08-28 1966-02-01 Litton Systems Inc Method and apparatus for cleansing by ionic bombardment
US3347772A (en) * 1964-03-02 1967-10-17 Schjeldahl Co G T Rf sputtering apparatus including a capacitive lead-in for an rf potential

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2128813A (en) * 1982-09-30 1984-05-02 Dale Electronics Thin film resistor
GB2140460A (en) * 1983-05-27 1984-11-28 Dowty Electronics Ltd Insulated metal substrates

Also Published As

Publication number Publication date
FR1505162A (en) 1967-12-08
GB1118759A (en) 1968-07-03
DE1515309B2 (en) 1977-11-10
NL6617765A (en) 1967-06-21
JPS4327930B1 (en) 1968-12-02
CH469101A (en) 1969-02-28
DE1515310A1 (en) 1969-08-14
US3525680A (en) 1970-08-25
DE1515309A1 (en) 1969-07-31
CH471241A (en) 1969-04-15
SE334083B (en) 1971-04-05
BE690690A (en) 1967-05-16

Similar Documents

Publication Publication Date Title
Davidse et al. Dielectric thin films through rf sputtering
US3616403A (en) Prevention of inversion of p-type semiconductor material during rf sputtering of quartz
Vossen Glow discharge phenomena in plasma etching and plasma deposition
US4170662A (en) Plasma plating
KR940002750B1 (en) Method for carbon film production
GB1118758A (en) Improvements in or relating to the sputtering of conductive materials
US3763031A (en) Rf sputtering apparatus
US5232571A (en) Aluminum nitride deposition using an AlN/Al sputter cycle technique
US3763026A (en) Method of making resistor thin films by reactive sputtering from a composite source
EP0024863A2 (en) A tantalum thin film capacitor and process for producing the same
JPS6134510B2 (en)
Davidse Theory and practice of RF sputtering
US3661747A (en) Method for etching thin film materials by direct cathodic back sputtering
US4000055A (en) Method of depositing nitrogen-doped beta tantalum
Salama RF sputtered aluminum oxide films on silicon
US6153068A (en) Parallel plate sputtering device with RF powered auxiliary electrodes and applied external magnetic field
GB1212114A (en) Negative-temperature-coefficient resistors
US3239368A (en) Method of preparing thin films on substrates by an electrical discharge
Kwon et al. Etching properties of Pt thin films by inductively coupled plasma
US3463715A (en) Method of cathodically sputtering a layer of silicon having a reduced resistivity
US3743587A (en) Method for reactive sputter deposition of phosphosilicate glass
JPH04118884A (en) Solid discharge element
US3703456A (en) Method of making resistor thin films by reactive sputtering from a composite source
JPS62189725A (en) Plasma cvd apparatus
JPS6147645A (en) Formation of thin film