GB2140460A - Insulated metal substrates - Google Patents

Insulated metal substrates Download PDF

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Publication number
GB2140460A
GB2140460A GB08406368A GB8406368A GB2140460A GB 2140460 A GB2140460 A GB 2140460A GB 08406368 A GB08406368 A GB 08406368A GB 8406368 A GB8406368 A GB 8406368A GB 2140460 A GB2140460 A GB 2140460A
Authority
GB
United Kingdom
Prior art keywords
thin
layer
substrate
copper
keying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB08406368A
Other versions
GB8406368D0 (en
GB2140460B (en
Inventor
Mohammed Nazim Khan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dowty Electronics Ltd
Original Assignee
Dowty Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB838314857A external-priority patent/GB8314857D0/en
Application filed by Dowty Electronics Ltd filed Critical Dowty Electronics Ltd
Priority to GB08406368A priority Critical patent/GB2140460B/en
Publication of GB8406368D0 publication Critical patent/GB8406368D0/en
Publication of GB2140460A publication Critical patent/GB2140460A/en
Application granted granted Critical
Publication of GB2140460B publication Critical patent/GB2140460B/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)

Abstract

An insulated copper substrate for use in the manufacture of electronic circuits and able to withstand high temperatures, e.g. 850 DEG C comprises a substrate of copper, a thin keying layer on a surface of the substrate, and a layer of SiO2 and/or Al2O3 on the thin keying layer. The thin keying layer is a metal or alloy having a coefficient of thermal expansion between that of copper and that of the ceramic material, e.g. steel or molybdenum.

Description

SPECIFICATION Insulated metal substrates This invention relates to insulated metal substrates.
Insulated metal substrates are frequently used in the manufacture of electronic circuits, and as inserts in headers and cans in the chip-packaging industry.
To use copper as the metal substrate would be advantageous because, having a high thermal conductivity, it could readily absorb and then dissipate the heat generated, in use, by the components of an electronic circuit.
One problem which arises from so using a copper substrate is that the insulating material, formed on the surface of the substrate, must be capable of transmitting high temperatures, say 850 C, to the copper without breaking down.
According to this invention, an insulated copper substrate comprises a base or substrate of copper, a thin keying layer on a surface of the substrate and a layer of ceramic material, chosen from SiO2 and/or Awl203, on the thin keying layer, the thin keying layer being a metal or alloy having a coefficient of thermal expansion between that of copper and that of the ceramic material.
The thin keying layer will have a thickness in the region of 1000 Angstrom units.
The layer of ceramic material may be between 2um and 3um thick.
The invention also provides a method of making such an insulated copper substrate which includes the steps of providing on the surface of the copper substrate a thin layer of the said keying material and then providing, on the thin layer of the keying material, a layer of the said ceramic material.
The copper surface may be polished before being provided with the thin keying layer.
The thin keying layer may, conveniently, be deposited on the copper substrate by a sputtering technique. It could, however, and by way of further example, be provided on the copper substrate by chemical vapour deposition.
The ceramic material may also be deposited on the thin keying layer by sputtering. Other deposition techniques could be used, e.g. chemical vapour deposition.
The thin keying material may, conveniently, be steel or molybdenum.
The term copper, as used herein, includes not only copper but also suitable copper-base alloys.
In one embodiment of the invention, which is given by way of example, a copper substrate was cleaned using an Arklone ultrasonic apparatus.
A layer of mild steel was then sputtered onto the substrate, such layer being 1 500 A thick.
A layer of SiO2 was then sputtered onto the mild steel, such layer being 3um thick.
The insulated copper substrate so produced had an insulation resistance of greater than 1000 megohms for an applied voltage of 100 volts.
On heating the copper substrate so produced up to 850 C, the insulated ceramic layer did not peel off and, after cooling to room temperature, still displayed the same insulation resistance.

Claims (9)

1. An insulated copper substrate comprising a base or substrate of copper, a thin keying layer on a surface of the base or substrate and, on the thin keying layer, a layer of ceramic material chosen from SiO2 and/or Awl203, the thin keying layer being a metal or alloy having a coefficient of thermal expansion between that of copper and that of the ceramic material.
2. An insulated copper substrate as claimed in Claim 1 in which the said surface is a polished surface.
3. An insulated copper substrate as claimed in either Claim 1 or Claim 2 in which the thin keying layer is of steel.
4. An insulated copper substrate as claimed in either Claim 1 or Claim 2 in which the thin keying layer is of molybdenum.
5. A method of making an insulated copper substrate as claimed in Claim 1, which method includes the steps of providing, on a surface of a base or substrate of copper, a thin keying layer of the said metal or alloy, and then providing, on that thin keying layer, a layer of said ceramic material.
6. A method as claimed in Claim 5 in which the thin keying layer is provided by a sputtering technique.
7. A method as claimed in Claim 5 in which the thin keying layer is provided by chemical vapour deposition.
8. A method as claimed in any one of Claims 5, 6 or 7, in which the ceramic layer is provided by a sputtering technique.
9. A method as claimed in any one of Claims 5 to 8 in which the surface of the copper substrate is polished priorto deposition of the thin keying layer.
GB08406368A 1983-05-27 1984-03-12 Insulated metal substrates Expired GB2140460B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08406368A GB2140460B (en) 1983-05-27 1984-03-12 Insulated metal substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB838314857A GB8314857D0 (en) 1983-05-27 1983-05-27 Insulated metal substrates
GB08406368A GB2140460B (en) 1983-05-27 1984-03-12 Insulated metal substrates

Publications (3)

Publication Number Publication Date
GB8406368D0 GB8406368D0 (en) 1984-04-18
GB2140460A true GB2140460A (en) 1984-11-28
GB2140460B GB2140460B (en) 1986-06-25

Family

ID=26286260

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08406368A Expired GB2140460B (en) 1983-05-27 1984-03-12 Insulated metal substrates

Country Status (1)

Country Link
GB (1) GB2140460B (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2164060A (en) * 1984-07-17 1986-03-12 Bbc Brown Boveri & Cie Method of applying a protective layer to oxide dispersion hardened super alloys
EP0186655A2 (en) * 1984-12-27 1986-07-02 VOEST-ALPINE Aktiengesellschaft Process for making a composite circuit board
US4767674A (en) * 1984-01-27 1988-08-30 Dainichi-Nippon Cables, Ltd. Metal cored board and method for manufacturing same
CH668660A5 (en) * 1986-10-16 1989-01-13 Optec Dai Chi Denko ELECTRIC CONDUCTOR COATED WITH AN ADHERENT INSULATING LAYER RESISTANT TO HIGH TEMPERATURES.
EP0416898A2 (en) * 1989-09-05 1991-03-13 Xerox Corporation Thick film substrate with highly thermally conductive metal base
WO2003002782A1 (en) * 2001-06-28 2003-01-09 Energenius, Inc. Method of making a nickel-coated copper substrate and thin film composite containing the same
US6649930B2 (en) 2000-06-27 2003-11-18 Energenius, Inc. Thin film composite containing a nickel-coated copper substrate and energy storage device containing the same

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB978992A (en) * 1960-12-16 1965-01-01 Rca Corp Insulation
GB1118758A (en) * 1965-12-20 1968-07-03 Ibm Improvements in or relating to the sputtering of conductive materials
GB1262758A (en) * 1968-06-28 1972-02-09 Ibm Method of plating semiconductor surface
GB1342071A (en) * 1970-04-17 1973-12-25 Wilkinson Sword Ltd Razor blades
GB1358416A (en) * 1970-09-24 1974-07-03 Westinghouse Electric Corp Apparatus for preparing an electronic component on a substrate by vapour deposition
GB1527341A (en) * 1976-02-17 1978-10-04 Technovation Process for manufacturing a ferroelectric device and devices manufactured thereby
GB2083842A (en) * 1980-09-09 1982-03-31 Westinghouse Electric Corp Transparent abrasive resistant sputtered films on metal substrates
GB2109415A (en) * 1981-10-01 1983-06-02 Sumitomo Electric Industries Wear resistant amorphous alumina coating for hard alloys

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB978992A (en) * 1960-12-16 1965-01-01 Rca Corp Insulation
GB1118758A (en) * 1965-12-20 1968-07-03 Ibm Improvements in or relating to the sputtering of conductive materials
GB1262758A (en) * 1968-06-28 1972-02-09 Ibm Method of plating semiconductor surface
GB1342071A (en) * 1970-04-17 1973-12-25 Wilkinson Sword Ltd Razor blades
GB1358416A (en) * 1970-09-24 1974-07-03 Westinghouse Electric Corp Apparatus for preparing an electronic component on a substrate by vapour deposition
GB1527341A (en) * 1976-02-17 1978-10-04 Technovation Process for manufacturing a ferroelectric device and devices manufactured thereby
GB2083842A (en) * 1980-09-09 1982-03-31 Westinghouse Electric Corp Transparent abrasive resistant sputtered films on metal substrates
GB2109415A (en) * 1981-10-01 1983-06-02 Sumitomo Electric Industries Wear resistant amorphous alumina coating for hard alloys

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4767674A (en) * 1984-01-27 1988-08-30 Dainichi-Nippon Cables, Ltd. Metal cored board and method for manufacturing same
GB2164060A (en) * 1984-07-17 1986-03-12 Bbc Brown Boveri & Cie Method of applying a protective layer to oxide dispersion hardened super alloys
EP0186655A2 (en) * 1984-12-27 1986-07-02 VOEST-ALPINE Aktiengesellschaft Process for making a composite circuit board
EP0186655A3 (en) * 1984-12-27 1986-10-22 VOEST-ALPINE Aktiengesellschaft Process for making a composite circuit board
CH668660A5 (en) * 1986-10-16 1989-01-13 Optec Dai Chi Denko ELECTRIC CONDUCTOR COATED WITH AN ADHERENT INSULATING LAYER RESISTANT TO HIGH TEMPERATURES.
EP0416898A2 (en) * 1989-09-05 1991-03-13 Xerox Corporation Thick film substrate with highly thermally conductive metal base
EP0416898A3 (en) * 1989-09-05 1992-02-12 Xerox Corporation Thick film substrate with highly thermally conductive metal base
US6649930B2 (en) 2000-06-27 2003-11-18 Energenius, Inc. Thin film composite containing a nickel-coated copper substrate and energy storage device containing the same
WO2003002782A1 (en) * 2001-06-28 2003-01-09 Energenius, Inc. Method of making a nickel-coated copper substrate and thin film composite containing the same

Also Published As

Publication number Publication date
GB8406368D0 (en) 1984-04-18
GB2140460B (en) 1986-06-25

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PCNP Patent ceased through non-payment of renewal fee