JPH06293963A - Backing plate for ito sputtering target - Google Patents
Backing plate for ito sputtering targetInfo
- Publication number
- JPH06293963A JPH06293963A JP10508393A JP10508393A JPH06293963A JP H06293963 A JPH06293963 A JP H06293963A JP 10508393 A JP10508393 A JP 10508393A JP 10508393 A JP10508393 A JP 10508393A JP H06293963 A JPH06293963 A JP H06293963A
- Authority
- JP
- Japan
- Prior art keywords
- target
- backing plate
- ito
- melting point
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はＩＴＯスパッタリングタ
ーゲットを用いてスパッタリングする際に使用されるバ
ッキングプレートに関する。FIELD OF THE INVENTION The present invention relates to a backing plate used when sputtering with an ITO sputtering target.
【０００２】[0002]
【従来の技術及びその問題点】一般に、Ｉｎ2Ｏ3とＳｎ
Ｏ2とを主成分とするＩＴＯ（Indium Tin Oxide）膜は
可視光透過率が高いと同時に電気抵抗が低いことから液
晶デバイス等の透明導電膜や窓ガラス用結露防止発熱膜
等様々な用途に広く用いられている。ＩＴＯ膜を形成す
る方法としては、真空蒸着法やスパッタリング法が用い
られているが、特にスパッタリング法が大面積の成膜が
可能である、成膜速度が大きい、低抵抗の膜を再現性良
く形成できる等の利点から広く用いられている。そし
て、スパッタリング法でＩＴＯ膜を形成する場合、通常
はＩｎ−Ｓｎ合金ターゲットあるいはＩＴＯ焼結体ター
ゲットが用いられるが、特にＩＴＯ焼結体をターゲット
としたスパッタリング法が、プロセス制御の容易さから
現在の主流となっている。2. Description of the Related Art Generally, In 2 O 3 and Sn are used.
Since the ITO (Indium Tin Oxide) film containing O 2 as a main component has a high visible light transmittance and a low electric resistance, it is suitable for various applications such as transparent conductive films for liquid crystal devices and dew condensation prevention heat-generating films for window glass. Widely used. As a method for forming an ITO film, a vacuum vapor deposition method or a sputtering method is used, but in particular, the sputtering method can form a large area film, has a high film formation rate, and has a low resistance film with good reproducibility. It is widely used because it can be formed. And when forming an ITO film by a sputtering method, an In-Sn alloy target or an ITO sintered body target is usually used, but the sputtering method using the ITO sintered body as a target is currently used because of easy process control. Has become the mainstream.
【０００３】ＩＴＯ焼結体ターゲットを用いてスパッタ
リングする際、ターゲットは通常、無酸素銅、リン青
銅、ステンレス鋼等の材質で形成されたバッキングプレ
ートに低融点半田を用いて接合し使用される。接合に低
融点半田を用いるのは、ターゲットとバッキングプレー
トとの熱的接触を良くするためで、これはバッキングプ
レートを介してターゲットを冷却する必要が有るためで
ある。しかし、低融点半田を用いて接合する際、ターゲ
ットとバッキングプレートとを半田の融点以上にまで加
熱する必要から、ＩＴＯターゲットとバッキングプレー
トとの熱膨張率の違いよる影響で両者の間に冷却時に歪
が発生する。When sputtering is performed using an ITO sintered body target, the target is usually used by bonding it to a backing plate made of a material such as oxygen-free copper, phosphor bronze, or stainless steel using a low melting point solder. The low melting point solder is used for joining in order to improve the thermal contact between the target and the backing plate, and this is because it is necessary to cool the target through the backing plate. However, when joining using a low melting point solder, it is necessary to heat the target and the backing plate to a temperature above the melting point of the solder, so that the ITO target and the backing plate are affected by the difference in the coefficient of thermal expansion during cooling between them. Distortion occurs.
【０００４】例えば平板状ターゲットの場合にはターゲ
ット全体に反りが生じる。反りの生じた平板状ターゲッ
トはそのままではスパッタリング装置への取付けが困難
なため、反りを矯正するために反りと逆方向に機械的に
変形させることが特開平２−１２２０７１に記載されて
いる。しかし、この矯正作業中にＩＴＯターゲットが破
損することがあり、ＩＴＯターゲットの製造工程中にお
ける歩留低下の一因となっている。For example, in the case of a flat target, the entire target is warped. Since it is difficult to attach the warped flat plate target to the sputtering apparatus as it is, it is described in Japanese Patent Laid-Open No. 1220771 that the warp is mechanically deformed in the direction opposite to the warp in order to correct the warp. However, the ITO target may be damaged during this straightening work, which is one of the causes of a decrease in yield during the manufacturing process of the ITO target.
【０００５】また、近年、ＲＣＭ（Rotatable Cylindri
cal Magnetron）等の新しいスパッタリング装置が使用
されるようになり、これらの装置に使用する円筒形状の
ＩＴＯスパッタリングターゲットに対する要求が高まっ
てきている。例えば、円筒形状のＩＴＯターゲットの製
造方法が特開平３−１５３８６７、特開平３−１５３８
６８に開示されている。このような円筒形状のＩＴＯタ
ーゲットは平板状のターゲットと同様に無酸素銅やリン
青銅、ステンレス鋼製のバッキングプレートに低融点半
田を用いて接合してスパッタリングに使用されることが
冷却効率等の点から望ましいが、円筒形状の場合、ター
ゲットとバッキングプレートとの熱膨張差を反り等によ
って緩和することができないために歪がそのままターゲ
ットの割れ、クラックにつながる場合が多い。そのた
め、円筒形状のＩＴＯターゲットを低融点半田でバッキ
ングプレートにクラックが生じることなく接合すること
は困難であり、ターゲットを軸方向に小片に分割して接
合したり、樹脂による接合を行なったりしていた。しか
し、このような方法では、必ずしも満足できる円筒形状
のＩＴＯターゲットは得られず、熱的接触性や経済性に
優れ、クラックが生じることのない低融点半田接合によ
る円筒形状ＩＴＯターゲットを使用し得るバッキングプ
レートが求められている。In recent years, RCM (Rotatable Cylindri
Cal magnetron) and other new sputtering devices have come into use, and there is an increasing demand for cylindrical ITO sputtering targets used in these devices. For example, a method for manufacturing a cylindrical ITO target is disclosed in JP-A-3-153867 and JP-A-3-1538.
68. Such a cylindrical ITO target is used for sputtering by bonding it to a backing plate made of oxygen-free copper, phosphor bronze, or stainless steel using a low melting point solder as in the case of a flat plate-shaped target. Although desirable from the point of view, in the case of a cylindrical shape, since the difference in thermal expansion between the target and the backing plate cannot be relaxed by warping or the like, the strain often directly leads to cracking or cracking of the target. Therefore, it is difficult to join a cylindrical ITO target with a low melting point solder without cracks in the backing plate, and the target is divided into small pieces in the axial direction and joined, or joined with a resin. It was However, in such a method, a satisfactory cylindrical ITO target is not always obtained, and it is possible to use a cylindrical ITO target with a low melting point solder joint that is excellent in thermal contact property and economical efficiency and does not cause cracks. Backing plates are needed.
【０００６】本発明は、ＩＴＯ焼結体ターゲットをバッ
キングプレートと低融点半田を用いて接合する際、両者
の熱膨張率の差を無くし、平板状ターゲットの場合には
ターゲットの反り、円筒形状のターゲットの場合にはタ
ーゲットの割れクラックを生じない、ＩＴＯ焼結体ター
ゲットに適合したバッキングプレートを提供することを
目的とする。According to the present invention, when the ITO sintered body target is joined to the backing plate using the low melting point solder, the difference in the coefficient of thermal expansion between the two is eliminated, and in the case of the flat target, the target warps and the cylindrical shape is used. An object of the present invention is to provide a backing plate suitable for an ITO sintered body target, which does not cause cracking and cracking of the target in the case of a target.
【０００７】[0007]
【問題点を解決するための手段】本発明者らは、上記し
た従来の問題点を解決するために鋭意研究した結果、Ｉ
ＴＯ焼結体ターゲットとＴｉとの熱膨張率が非常に近似
したものであるとの新たな知見を得、本発明を成すに至
ったものである。すなわち、本発明では、ＩＴＯ焼結体
ターゲットを用いてスパッタリングする際に使用される
バッキングプレートの材質として、Ｔｉを用いることを
特徴とするものであり、これにより前記課題を達成した
ものである。[Means for Solving the Problems] As a result of intensive studies conducted by the present inventors to solve the above-mentioned conventional problems, I
The present invention has been accomplished by obtaining new knowledge that the thermal expansion coefficients of the TO sintered body target and Ti are very close to each other. That is, the present invention is characterized in that Ti is used as the material of the backing plate used when sputtering is performed using the ITO sintered body target, and thereby the above-mentioned object is achieved.
【０００８】[0008]
【作用】本発明では、バッキングプレートの材質として
Ｔｉを用いているため、その熱膨張係数は約８．５×
（１／１０6）／℃であり、ＩＴＯ焼結体ターゲットの
熱膨張係数７．０〜８．５×（１／１０6）／℃と極め
て近似しており、従ってこのバッキングプレートを用い
てＩＴＯ焼結体ターゲットを低融点半田を用いて接合す
る際、ターゲット及びバッキングプレートを加熱しても
両者の間に熱膨張差が殆ど生じないため、平板状ターゲ
ットの場合には反り等の変形が生じず、その矯正作業が
不要となり、矯正作業時のＩＴＯターゲットの割れ発生
等による歩留低下の恐れがなくなる。また、円筒形状タ
ーゲットの場合にもターゲットとバッキングプレートと
の間で歪が発生しないので、ＩＴＯ焼結体ターゲットの
割れやクラックの発生が生じない。In the present invention, since the backing plate is made of Ti, its coefficient of thermal expansion is about 8.5 ×.
(1/10 6 ) / ° C., which is very close to the thermal expansion coefficient of the ITO sintered body target of 7.0 to 8.5 × (1/10 6 ) / ° C. Therefore, using this backing plate When the ITO sintered body target is joined by using the low melting point solder, even if the target and the backing plate are heated, there is almost no difference in thermal expansion between them, so that in the case of a flat target, deformation such as warpage occurs. The correction work is not required, and there is no fear of yield loss due to cracking of the ITO target during the correction work. Further, even in the case of a cylindrical target, no strain is generated between the target and the backing plate, so that the ITO sintered body target is not cracked or cracked.
【０００９】本発明のバッキングプレートはＴｉを主成
分とするが、熱膨張率がＴｉのそれと大きく変わってＩ
ＴＯ焼結体ターゲットの熱膨張率との類似性が保たれな
くならない限り、適宜の添加元素、例えばＡｌ、Ｖを数
％程度加えても差し支えない。The backing plate of the present invention contains Ti as a main component, but its coefficient of thermal expansion greatly changes from that of Ti.
An appropriate additive element, such as Al or V, may be added in an amount of about several percent as long as the thermal expansion coefficient of the TO sintered body target does not become similar.
【００１０】なお、本発明のバッキングプレートは、Ｔ
ｉを主成分とするため、そのままでは低融点半田に対す
る濡れ性が非常に悪いので、ＩＴＯ焼結体ターゲットと
の接合を行なう面について、ＮｉめっきやＣｕの溶射を
行なう等、低融点半田に対する濡れ性を改善することが
好ましい。The backing plate of the present invention has a T
Since i is the main component, the wettability to low melting point solder is very poor as it is. Therefore, the surface to be joined with the ITO sintered body target is wetted to low melting point solder such as Ni plating or Cu thermal spraying. It is preferable to improve the property.
【００１１】[0011]
【効果】以上のような本発明によれば以下のような効果
を有する。 （１）円筒状ＩＴＯ焼結体ターゲットに割れ、クラック
等の欠陥が防止できる。 （２）平板状ターゲット場合に反り等の変形が生じない
ため、矯正作業が不要となる。 （３）Ｔｉは非磁性でマグネトロンスパッタリングにも
使用が可能である。 （４）低融点半田接合を剥離することで、バッキングプ
レートの繰返し使用が容易にでき、経済的である。 （５）従来のバッキングプレート（比重、Ｃｕ：８．９
３，ＳＵＳ：８．０３）に比べてＴｉは軽量（比重：
４．５０）であり、ハンドリング上便利であるとともに
輸送コスト等の点で有利である。According to the present invention as described above, the following effects are obtained. (1) Defects such as cracks and cracks in the cylindrical ITO sintered body target can be prevented. (2) In the case of a flat plate-shaped target, deformation such as warpage does not occur, so that correction work is unnecessary. (3) Ti is non-magnetic and can be used for magnetron sputtering. (4) By peeling off the low melting point solder joint, the backing plate can be easily used repeatedly, which is economical. (5) Conventional backing plate (specific gravity, Cu: 8.9)
3, Ti is lighter than SUS: 8.03 (specific gravity:
It is 4.50), which is convenient in handling and advantageous in terms of transportation cost and the like.
【００１２】以下に実施例を示す。Examples will be shown below.
【実施例１】１２７ｍｍ×３８１ｍｍ×６ｍｍｔの平板
状のＩＴＯ焼結体ターゲット（密度８５％）をＴｉ製の
厚さ６ｍｍのバッキングプレートにＩｎ系低融点半田を
用いて接合した。この時Ｔｉ製バッキングプレートのタ
ーゲットとの接合面には、低融点半田の濡れ性を改善す
るため、Ｎｉめっきを施した。接合後、ターゲットを室
温にまで冷却し、ターゲットをバッキングプレート側を
下にして定盤の上に置いて反りを調べたところ、反りが
まったく見られなかった。Example 1 A flat ITO sintered body target (density 85%) of 127 mm × 381 mm × 6 mmt was bonded to a backing plate made of Ti and having a thickness of 6 mm using an In-based low melting point solder. At this time, the joint surface of the Ti backing plate with the target was plated with Ni in order to improve the wettability of the low melting point solder. After joining, the target was cooled to room temperature, the target was placed on the surface plate with the backing plate side down, and the warpage was examined. No warpage was observed.
【００１３】[0013]
【比較例１】実施例１と同様のＩＴＯ焼結体ターゲット
を無酸素銅製バッキングプレート（厚さ６ｍｍ）にＩｎ
系低融点半田を用いて接合した。接合後、ターゲットを
室温にまで冷却し、実施例１と同様にして反りを調べた
ところ、ターゲット中心部で２．３ｍｍのすき間が反り
によって生じていた。[Comparative Example 1] The same ITO sintered body target as in Example 1 was placed on an oxygen-free copper backing plate (thickness: 6 mm).
Bonding was performed using a low melting point solder. After the joining, the target was cooled to room temperature and the warp was examined in the same manner as in Example 1. As a result, a gap of 2.3 mm was generated in the center of the target due to the warp.
【００１４】[0014]
【実施例２】内径１００ｍｍφ、外径１１０ｍｍφ、長
さ１２０ｍｍの円筒形状ＩＴＯ焼結体ターゲットを外径
９９．５φ、内径９０ｍｍφ、長さ１４０ｍｍの円筒形
状Ｔｉ製バッキングプレートにＩｎ系低融点半田を用い
て接合した。この時、バッキングプレート側の接合面に
はＩｎ系低融点半田の濡れ性改善のため、Ｃｕを溶射し
た。接合後、ターゲットを室温にまで冷却し、観察した
ところ、割れ、クラック等の欠陥は見られなかった。Example 2 A cylindrical ITO sintered body target having an inner diameter of 100 mmφ, an outer diameter of 110 mmφ and a length of 120 mm was applied to a cylindrical Ti backing plate having an outer diameter of 99.5φ, an inner diameter of 90 mmφ and a length of 140 mm and an In-based low melting point solder. Used for joining. At this time, Cu was sprayed on the bonding surface on the backing plate side in order to improve the wettability of the In-based low melting point solder. After bonding, the target was cooled to room temperature and observed, and no defects such as cracks and cracks were found.
【００１５】[0015]
【比較例２】実施例２と同様のＩＴＯ焼結体ターゲット
を同様の寸法の円筒形状の無酸素銅製バッキングプレー
トにＩｎ系低融点半田を用いて接合した。接合後、ター
ゲットを室温にまで冷却して観察すると、ターゲットの
長手方向に沿ってクラックが生じていた。Comparative Example 2 An ITO sintered body target similar to that of Example 2 was bonded to a cylindrical oxygen-free copper backing plate having the same size using an In-based low melting point solder. After the bonding, when the target was cooled to room temperature and observed, cracks were generated along the longitudinal direction of the target.
【００１６】以上のように、平板状ターゲットの場合に
は、反り変形が効果的に抑制でき、また反り変形による
応力緩和が不可能な円筒形状ターゲットの場合には熱膨
張差が直接ターゲットの割れに結び付くが、本発明によ
るＴｉ製バッキングプレートでは割れ、クラック等の欠
陥が生じず、極めて効果的であることが明らかとなっ
た。As described above, in the case of the flat target, the warp deformation can be effectively suppressed, and in the case of the cylindrical target in which the stress relaxation due to the warp deformation is impossible, the thermal expansion difference directly causes the cracking of the target. However, it was revealed that the Ti backing plate according to the present invention is extremely effective because it does not cause defects such as cracks and cracks.
Claims (1)
てスパッタリングする際に使用されるバッキングプレー
トであって、その材質がＴｉからなることを特徴とする
ＩＴＯスパッタリングターゲット用バッキングプレー
ト。1. A backing plate for use in sputtering using an ITO sputtering target, the backing plate for an ITO sputtering target being made of Ti.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10508393A JPH06293963A (en) | 1993-04-07 | 1993-04-07 | Backing plate for ito sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10508393A JPH06293963A (en) | 1993-04-07 | 1993-04-07 | Backing plate for ito sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06293963A true JPH06293963A (en) | 1994-10-21 |
Family
ID=14398035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10508393A Pending JPH06293963A (en) | 1993-04-07 | 1993-04-07 | Backing plate for ito sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06293963A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997008358A1 (en) * | 1995-08-31 | 1997-03-06 | Innovative Sputtering Technology | A process for manufacturing ito alloy articles |
| JP2005281862A (en) * | 2004-03-05 | 2005-10-13 | Tosoh Corp | Cylindrical sputtering target, ceramic sintered compact and production method therefor |
| DE112006003537T5 (en) | 2005-12-28 | 2008-12-24 | Advanced Material Technology Co. Ltd., Fuji | sputtering target |
| US8206561B2 (en) | 2004-03-05 | 2012-06-26 | Tosoh Corporation | Cylindrical sputtering target, ceramic sintered body, and process for producing sintered body |
| JP2016156049A (en) * | 2015-02-24 | 2016-09-01 | 住友金属鉱山株式会社 | Method for manufacturing cylindrical sputtering target |
-
1993
- 1993-04-07 JP JP10508393A patent/JPH06293963A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997008358A1 (en) * | 1995-08-31 | 1997-03-06 | Innovative Sputtering Technology | A process for manufacturing ito alloy articles |
| US6123787A (en) * | 1995-08-31 | 2000-09-26 | Innovative Sputtering Technology | Process for manufacturing ITO alloy articles |
| JP2005281862A (en) * | 2004-03-05 | 2005-10-13 | Tosoh Corp | Cylindrical sputtering target, ceramic sintered compact and production method therefor |
| US8206561B2 (en) | 2004-03-05 | 2012-06-26 | Tosoh Corporation | Cylindrical sputtering target, ceramic sintered body, and process for producing sintered body |
| DE112006003537T5 (en) | 2005-12-28 | 2008-12-24 | Advanced Material Technology Co. Ltd., Fuji | sputtering target |
| DE112006003537B4 (en) | 2005-12-28 | 2017-07-06 | Plansee Se | Method of making a sputtering target assembly |
| JP2016156049A (en) * | 2015-02-24 | 2016-09-01 | 住友金属鉱山株式会社 | Method for manufacturing cylindrical sputtering target |
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Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20021009 |