JPH0243362A - Joined body of sputtering target and backing plate - Google Patents
Joined body of sputtering target and backing plateInfo
- Publication number
- JPH0243362A JPH0243362A JP19419388A JP19419388A JPH0243362A JP H0243362 A JPH0243362 A JP H0243362A JP 19419388 A JP19419388 A JP 19419388A JP 19419388 A JP19419388 A JP 19419388A JP H0243362 A JPH0243362 A JP H0243362A
- Authority
- JP
- Japan
- Prior art keywords
- backing plate
- sputter target
- deformation
- grooves
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title abstract 3
- 238000005219 brazing Methods 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 238000004299 exfoliation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 239000000945 filler Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- -1 transition metals Chemical class 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、スパッターターゲットとバッキングプレー１
〜の接合体に関し、詳しくはスパッターターゲットと銅
、銅合金等よりなるバッキングプレートとをそり、変形
を生じさせることなく、ろう接合した接合体に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a sputter target and a backing play 1.
In particular, the present invention relates to a joined body in which a sputter target and a backing plate made of copper, copper alloy, etc. are warped and brazed together without causing deformation.
スパッタリング装置においては、第４図に示すようにス
パッタされるべきスパッターターゲット２は通常円板ま
たは板状に加工され、冷却機構を有する無酸素銅（以下
単に銅と記す）等のバッキングプレート１上にろう付け
によって接合される。In a sputtering apparatus, as shown in FIG. 4, a sputter target 2 to be sputtered is usually processed into a disk or plate shape, and is placed on a backing plate 1 made of oxygen-free copper (hereinafter simply referred to as copper) or the like having a cooling mechanism. joined by brazing.
スパッタリング用スパッターターゲットにバッキングプ
レートを設ける理由は、グロー放電中に生ずるイオンが
スパッターターゲットを衝撃することによる温度上昇を
防止することにあり、バッキングプレートはターゲット
を冷却する役割を有する。The reason why a backing plate is provided on a sputter target for sputtering is to prevent a temperature rise due to impact of ions generated during glow discharge on the sputter target, and the backing plate has a role of cooling the target.
従来、スパッターターゲットとバッキングプレートとの
ろう接合において以下のような問題が提起されていた。Conventionally, the following problems have been raised in brazing joints between sputter targets and backing plates.
すなわち、スパッターターゲラ１へを良好に冷却するに
は、バッキングプレートとスパッターターゲットとの熱
的接触を良くする必要がある。しかし、スパッターター
ゲットがろう接合し難い材質、例えば純Ｃｒ、Ｍｏ、Ｗ
、Ｔａ、ＷＳｉ２、ＭｏＳｉ２およびＴｂ−Ｆｅ−Ｇｏ
をはじめとする希土類金属−遷移金属などの場合、ろう
材はわずかな接合力を有するだけであり、スパッタリン
グ中にバッキングプレートからスパッターターゲットが
剥離してしまい、良好な冷却効果が得られない。また、
セラミックスなどの焼結スパッターターゲットの場合、
材質中に数多く存在する空孔を介してろう材が拡散し、
スパッターターゲットを汚染してしまうという問題があ
った。That is, in order to properly cool the sputter target layer 1, it is necessary to improve the thermal contact between the backing plate and the sputter target. However, sputter targets are made of materials that are difficult to solder, such as pure Cr, Mo, and W.
, Ta, WSi2, MoSi2 and Tb-Fe-Go
In the case of rare earth metals such as transition metals, etc., the brazing material has only a slight bonding force, and the sputter target peels off from the backing plate during sputtering, making it impossible to obtain a good cooling effect. Also,
For sintered sputter targets such as ceramics,
The brazing filler metal diffuses through the many pores that exist in the material,
There was a problem that the sputter target was contaminated.
この問題点に対しては、特開昭５４−８８８８５号、特
開昭５６−３３４７６号、あるいは特開昭６１−１６９
１６６号公報に、ろう材の接合性の向上、ろう材の拡散
防止を目的としてスパッターターゲットの接合面に、Ｎ
ｉ、Ｃｕ等のメタライズ層を形成し、続いてバッキング
プレートをろう材を介して接合する方法が提案されてい
る。Regarding this problem, Japanese Patent Application Laid-Open Nos. 54-88885, 56-33476, or 61-169
No. 166 discloses that N is added to the bonding surface of a sputter target for the purpose of improving the bondability of the brazing filler metal and preventing the diffusion of the brazing filler metal.
A method has been proposed in which a metallized layer of i, Cu, etc. is formed and then a backing plate is bonded via a brazing material.
一方、スパッターターゲットとバッキングプレートとの
ろう接合にあっては、以下のような問題も提起されてい
る。On the other hand, the following problems have also been raised in the brazing joint between the sputter target and the backing plate.
すなわち、従来ろう接合はスパッターターゲットとバッ
キングプレートとの間にろう材を介在させ、これらをろ
う材の融点直上にまで加熱、冷却するという作業によっ
て行なわれるが、１）スパッターターゲラ１−とバッキ
ングプレー１〜との熱膨張係数に差異がある場合（例え
ばスパッターターゲットをＣｒ、バッキングプレートを
銅とすると両者の熱膨張係数が著しく異なる）、２）ス
パッターターゲットおよびバッキングプレートの寸法が
大きい場合、
３）バッキングプレートの肉厚が厚い場合、４）ろう材
の融点が高い場合、ろう接合の冷却過程時に反り、変形
が生じスパッタリング装置に取付けられない。取付けら
れても接着の残留応力が解放され、スパッタリング中に
剥離が生ずる、といった不具合が生じた。That is, conventional brazing is performed by interposing a brazing material between a sputter target and a backing plate, and heating and cooling them to just above the melting point of the brazing material. If there is a difference in the coefficient of thermal expansion from play 1~ (for example, if the sputter target is made of Cr and the backing plate is made of copper, the thermal expansion coefficients of the two are significantly different), 2) If the dimensions of the sputter target and the backing plate are large, 3) ) If the backing plate is thick, or (4) if the melting point of the brazing filler metal is high, warping and deformation will occur during the cooling process of the brazing joint, making it impossible to install it in a sputtering device. Even after attachment, the residual stress of the adhesive was released, causing problems such as peeling during sputtering.
以上の不具合を防止するため、従来は以下のような手段
を講じていた。In order to prevent the above-mentioned problems, the following measures have conventionally been taken.
すなわち、
（イ）低融点のろう材、例えばＩｎ系のろう材を用いて
ろう接合時の加熱温度をできるだけ低く抑え、スパッタ
ーターゲットとバッキングプレートの熱膨張、収縮の差
を小さくする。(a) Using a low melting point brazing material, such as an In-based brazing material, the heating temperature during soldering is kept as low as possible to reduce the difference in thermal expansion and contraction between the sputter target and the backing plate.
（ロ）低融点でないろう材を用いた場合には、接合終了
後に生じた反り、変形をプレス等の機械的手段により矯
正する。(b) If a brazing filler metal with a low melting point is used, any warpage or deformation that occurs after bonding is corrected by mechanical means such as pressing.
しかしながら、前記（イ）の方法では、生産性向上のた
め高速スパッタリングを実施した場合に接合部分がろう
材の融点以上の温度に達し、ろう材が溶融して、スパッ
ターターゲットがバッキングプレートから剥離する場合
がある。However, in method (a), when high-speed sputtering is performed to improve productivity, the temperature at the joint reaches a temperature higher than the melting point of the brazing filler metal, melting the brazing filler metal, and causing the sputter target to separate from the backing plate. There are cases.
また、前記（ロ）の方法では、延性の劣るスパッタータ
ーゲットには効果が十分でなく、また矯正できたとして
も矯正による応力が残留し、仕上加工中、あるいはスパ
ッタリング時に変形が生じてしまう。Further, the method (b) is not sufficiently effective for sputter targets with poor ductility, and even if it can be corrected, stress from the correction remains, resulting in deformation during finishing or sputtering.
以上の問題点を解決する方法として、特開昭６１−２５
１０６７号にスパッターターゲットとバッキングプレー
トとの間に熱歪みを吸収する低融点金属からなる緩衝層
を設けることが提案されている。As a method to solve the above problems,
No. 1067 proposes providing a buffer layer made of a low melting point metal between a sputter target and a backing plate to absorb thermal strain.
しかし、緩衝層を設けることによりスパッターターゲッ
トとバッキングプレートとの熱的接触を阻害するため、
できればこのような緩衝層を設けないことが望ましいこ
とは言うまでもない。また、緩衝層を設けるための工数
が従来の方法より増加し、生産性の観点からも好ましく
ない。However, providing a buffer layer inhibits thermal contact between the sputter target and the backing plate.
It goes without saying that it is desirable not to provide such a buffer layer if possible. Furthermore, the number of man-hours for providing the buffer layer is increased compared to the conventional method, which is not preferable from the viewpoint of productivity.
本発明は、以上の背景に鑑み、簡易な手段でスパッター
ターゲットとバッキングプレートとを変形を生じさせず
に接合した接合体を提供するものである。In view of the above background, the present invention provides a joined body in which a sputter target and a backing plate are joined by simple means without causing deformation.
本発明は、スパッターターゲットとバッキングプレート
とがろう材を介して接合してなるスパッターターゲット
とバッキングプレートの接合体において、バッキングプ
レートの接合面に溝を設けたことを特徴とするスパッタ
ーターゲットとバッキングプレートの接合体である。The present invention provides a joined body of a sputter target and a backing plate in which the sputter target and the backing plate are bonded together via a brazing material, and the sputter target and the backing plate are characterized in that a groove is provided on the bonding surface of the backing plate. It is a zygote of
スパッターターゲットとバッキングプレートの接合は、
前述の如くろう材の融点まで加熱しろう材が融けた後に
放冷し接合する方法が一般的である。The sputter target and backing plate are joined together by
As mentioned above, a common method is to heat the brazing material to its melting point, allow the brazing material to melt, and then allow it to cool before joining.
加熱・冷却の過程ではスパッターターゲットに比ベパッ
キングプレートの熱膨張係数が大きいことから、接合後
は第５図に示すようにバッキングプレートが伸びた状態
の凸型の変形を生ずる。During the heating and cooling process, since the packing plate has a large coefficient of thermal expansion compared to the sputter target, after bonding, the backing plate undergoes an extended convex deformation as shown in FIG. 5.
本発明者は種々検討を行なったところ、バッキングプレ
ー１〜の接合面に溝を設けることにより、接合後の変形
を防止することができることを見出し本発明を完成する
に至った。After conducting various studies, the present inventor found that deformation after bonding can be prevented by providing grooves on the bonding surfaces of the backing plays 1 to 1, and completed the present invention.
バッキングプレートの接合面に溝を設けることにより、
接合後の変形を防止できる理由は明らかでないが、例え
ば特開昭５９−２３２２７０号に従い、スパッターター
ゲット側に溝を設けて接合を行なった場合には変形防止
に効果がなかったことからして、本発明の接合体での変
形防止はスパッターターゲットより熱膨張係数が大きい
バッキングプレート側に溝を設けることにより得られる
固有の効果であると考えられる。By providing grooves on the joint surface of the backing plate,
The reason why deformation after bonding can be prevented is not clear, but for example, when bonding was performed with grooves provided on the sputter target side according to JP-A-59-232270, there was no effect in preventing deformation. Prevention of deformation in the bonded body of the present invention is considered to be an inherent effect obtained by providing grooves on the side of the backing plate, which has a larger coefficient of thermal expansion than the sputter target.
本発明における溝の形態の例を第２図に示すが、ストラ
イプ状（第２図（１））、基盤目状（第２図（２））、
レコード溝状（第２図（３））等種々の形態で実施する
ことができる。Examples of groove shapes in the present invention are shown in FIG. 2, including striped shapes (FIG. 2 (1)), base grain shapes (FIG. 2 (2)),
It can be implemented in various forms such as a record groove shape (FIG. 2 (3)).
溝の断面形状については、７字形（第３図（１））、矩
形（第３図（２））、半円形（第３図（３））、Ｕ字形
（第３図（４））のいずれであっても十分効果を発揮す
ることができる。The cross-sectional shapes of the grooves are 7-shaped (Figure 3 (1)), rectangular (Figure 3 (2)), semicircular (Figure 3 (3)), and U-shaped (Figure 3 (4)). Either method can be sufficiently effective.
また、溝の断面寸法については、深さ１幅（開口幅）と
もに０．５＋＋＋ｎ＋以上でないと変形防止に十分な効
果がないことを確認した。Furthermore, regarding the cross-sectional dimensions of the groove, it was confirmed that unless both the depth and width (opening width) are 0.5+++n+ or more, there is no sufficient effect in preventing deformation.
一方、深さ、幅ともに１．５＋ｎｍ程度あれば変形防止
効果が十分に発揮され、がっそれ以上大きくすると溝形
成の工数およびバッキングプレートの再利用時の表面研
削の工数が多くなるといった問題があるので、溝の深さ
、幅は０．５ｍｍ〜１．５＋ＩＩｎにするのが望ましい
。On the other hand, if both the depth and width are about 1.5+nm, the deformation prevention effect will be sufficient, but if they are larger than that, there will be problems such as increased man-hours for groove formation and surface grinding when reusing the backing plate. Therefore, it is desirable that the depth and width of the groove be 0.5 mm to 1.5+IIn.
更に、溝のピッチは大きすぎると変形防止に効果がなく
、本発明者の検討によると金属系のターゲットに適用す
る場合には１０ｍｎ以下とすることが望ましい。Furthermore, if the pitch of the grooves is too large, it will not be effective in preventing deformation, and according to studies by the present inventors, it is desirable to set the groove pitch to 10 mm or less when applied to a metal target.
なお、上記溝の深さ、幅等の値は一応の指針であり、バ
ッキングプレートの寸法、スパッターターゲットの寸法
、材質によって最適値が異なることは言うまでもない。It should be noted that the values of the depth, width, etc. of the grooves described above are just a guideline, and it goes without saying that the optimum values vary depending on the dimensions of the backing plate, the dimensions of the sputter target, and the material.
接合方法は、従来から行なわれている方法に従えば良い
。The bonding method may be a conventional method.
すなわち、Ｉｎ系、Ｓ ｎ −Ａ ｇ系、５ｎ−Ｐｂ系
等のろう材をスパッターターゲットとバッキングプレー
トの間に介在させ、これをろう材の融点以上に加熱、冷
却すればよい。That is, an In-based, Sn-Ag-based, 5n-Pb-based brazing material, etc. may be interposed between the sputter target and the backing plate, and this may be heated and cooled to a temperature above the melting point of the brazing material.
なお、接合性の向上、ろう材のスパッターターゲット中
への拡散防止のために、スパッターターゲットの接合面
にメタライズ層を形成してもよいことは言うまでもない
。It goes without saying that a metallized layer may be formed on the bonding surface of the sputter target in order to improve bondability and prevent diffusion of the brazing material into the sputter target.
以下本発明を実施例に基づき説明する。 The present invention will be explained below based on examples.
実施例１
本実施例で用いたバッキングプレートは銅製で、寸法は
肉厚１５ｎ＋ｍ、幅１２１画、長さ７５０＋ｎｍである
。Example 1 The backing plate used in this example was made of copper and had dimensions of 15 nm+m in wall thickness, 121 strokes in width, and 750+ nm in length.
このバッキングプレートにＵ字形の溝を第２図（１）の
ようにストライプ状に形成した。溝の寸法は、深さ１＋
ｎｍ、幅１ｍｍであり、溝ピッチは３ｎｗｎである。U-shaped grooves were formed in this backing plate in the form of stripes as shown in FIG. 2 (1). The dimensions of the groove are depth 1+
nm, width 1 mm, and groove pitch 3nwn.
一方、接合したスパッターターゲットの寸法は厚さ６ｍ
ｍ、幅１００＋ｎｍ、長さ６８０ｎｗｎの純Ｃｒターゲ
ットである。なお、スパッターターゲットの接合面には
Ｃｕめっきを行なった。On the other hand, the dimension of the joined sputter target is 6m thick.
The pure Cr target has a width of 100 nm, a width of 100 nm, and a length of 680 nm. Note that Cu plating was performed on the joint surface of the sputter target.
以上のスパッターターゲットとバッキングプレートとの
間に９０ Ｓ ｎ−１０ｎ−１０ｎ％）のろう材を介在
し、２６０℃まで加熱、冷却し、接合を終了し、第１図
（１）に示すスパッターターゲットとバッキングプレー
トの接合体を得た。A brazing material of 90S n-10n-10n%) was interposed between the above sputter target and the backing plate, heated to 260°C, cooled to complete the bonding, and the sputter target shown in Fig. 1 (1) was obtained. A conjugate of the backing plate and the backing plate was obtained.
接合終了後、変形量を測定したが０．３＋ｎｍと良好で
あった。なお、変形量は第５図のｙ値（以下の変形量は
すべてｙ値を意味する）である。ｙ値はスパッターター
ゲットとバッキングプレートの接合体を平坦面に第５図
のように置いたときに、平坦面とバッキングプレートの
隙間の最大値として求まる。After the bonding was completed, the amount of deformation was measured and was found to be 0.3+nm, which was good. Note that the amount of deformation is the y value in FIG. 5 (all of the following amounts of deformation mean y values). The y value is determined as the maximum value of the gap between the flat surface and the backing plate when the sputter target and backing plate assembly is placed on a flat surface as shown in FIG.
従来例として、溝を形成する以外は本実施例と同寸法の
バッキングプレートとスパッターターゲットを用い、本
実施例と同様の寸法で接合を行なった。接合後変形量を
同様に測定したところ、１゜７ｍｍであった。また、上
記と同様の溝をスパッターターゲットの接合面に設けて
変形量を測定したところ、 １．５ｍｍであった。As a conventional example, a backing plate and a sputter target having the same dimensions as the present example were used except for forming grooves, and bonding was performed with the same dimensions as the present example. The amount of deformation after bonding was similarly measured and found to be 1.7 mm. Further, when a groove similar to that described above was provided on the joint surface of the sputter target and the amount of deformation was measured, it was found to be 1.5 mm.
すなわち、溝を全く形成しない接合体、または溝が形成
されていてもそれがスパッターターゲットの接合面にあ
る場合には変形量が大きく実用上不向きである。That is, a joined body in which no groove is formed, or even if a groove is formed, if it is located on the joint surface of the sputter target, the amount of deformation is large and it is not suitable for practical use.
実施例２
実施例１と同じバッキングプレートとスパッターターゲ
ットを用い、接合を行なった。Example 2 Bonding was performed using the same backing plate and sputter target as in Example 1.
なお、バッキングプレートには、半径０．８ｍｍ、深さ
０．８ｍｍの半円径溝をストライプ状に溝ピッチ４ｍで
形成した。Note that semicircular grooves with a radius of 0.8 mm and a depth of 0.8 mm were formed in stripes at a groove pitch of 4 m on the backing plate.
実施例１と同様に接合を実施し、第１図（２）に示す接
合体を得た後に変形量を測定したところ０．２５ｍｍと
良好であった。Bonding was carried out in the same manner as in Example 1, and after obtaining the bonded body shown in FIG. 1 (2), the amount of deformation was measured and found to be 0.25 mm, which was good.
実施例３
本実施例では、直径２４０ｍ、厚さ１３ｎｍの円板状バ
ッキングプレートに直径２３０ｎｙｎ、厚さ６面の８４
Ｃｏ−１６Ｃｒ（νｔ％）スパッターターゲットを接合
した。Example 3 In this example, a disk-shaped backing plate with a diameter of 240 m and a thickness of 13 nm was coated with an 84-meter plate having a diameter of 230 nyn and a thickness of 6 sides.
A Co-16Cr (vt%) sputter target was bonded.
接合条件は実施例１と同様である。The bonding conditions are the same as in Example 1.
バッキングプレートには深さ１面、幅１ｍのＶ字形溝を
溝ピッチ３ｍｌで第２図（３）のようにレコド溝状に形
成した。In the backing plate, a V-shaped groove having a depth of 1 side and a width of 1 m was formed in a record groove shape with a groove pitch of 3 ml as shown in FIG. 2 (3).
実施例１と同方法により、バッキングプレートとスパッ
ターターゲットを接合し、変形量を測定したところ０．
１＋＋ｎ＋と良好であった。The backing plate and sputter target were bonded together using the same method as in Example 1, and the amount of deformation was measured to be 0.
It was good at 1++n+.
従来例として、溝を形成しないバッキングプレートを用
い、その他の条件は本実施例と同様の接合を行なったと
ころ、０．８ｎｗｎの変形が発生した。As a conventional example, when a backing plate without grooves was used and bonding was performed under the same conditions as in this example, a deformation of 0.8 nwn occurred.
実施例４
実施例１で用いたのと同一のバッキングプレートおよび
スパッターターゲットを、バッキングプレートに基盤目
状の溝を形成し、ろう接合を行なった・
溝形状は半円形であり、溝寸法を半径］、 、 Ｏｍｍ
、深さ１．（ｌｎｗｎとし、溝ピッチは縦溝のピッチを
５ｍ、横溝のピッチを３ｍとした。接合は実施例１と同
様に行なった。Example 4 The same backing plate and sputter target as used in Example 1 were used, with substrate grooves formed on the backing plate and soldered together. The groove shape was semicircular, and the groove dimensions were set to a radius. ], , Omm
, depth 1. (lnwn, and the groove pitch was 5 m for the vertical grooves and 3 m for the horizontal grooves. Bonding was performed in the same manner as in Example 1.
接合終了後に変形量を測定したところ、０．２４ｍｍと
良好であった。When the amount of deformation was measured after the completion of bonding, it was found to be 0.24 mm, which was good.
以上説明のように、本発明によれば、従来、スパッター
ターゲットとバッキングプレートの接合後の変形が大き
くスパッタリング装置に取付けられない、また取付けら
れても使用中に剥離が生じるなどの不具合を効果的に防
止することができ、安定で実用的なスパッターターゲッ
トとバッキングプレートとの接合体を供給できる。As explained above, according to the present invention, conventional problems such as the deformation of the sputter target and the backing plate after they are joined so that they cannot be installed in a sputtering apparatus, and even if they are installed, peeling occurs during use can be effectively solved. It is possible to supply a stable and practical joint between a sputter target and a backing plate.
第１図は本発明にかかるスパッターターゲットとバッキ
ングプレートの接合体の実施例断面図、第２図はバッキ
ングプレートに溝を設ける態様を示す図、第３図はバッ
キングプレートに設ける溝の種々形状を示す図、第４図
は従来のスパッターターゲットとバッキングプレートの
接合体の断面図、および第５図は従来のスパッターター
ゲットとバッキングプレートの接合体における変形過程
を示す図である。
１：バッキングプレート、２ニスバッターター−１２〜FIG. 1 is a cross-sectional view of an embodiment of a sputter target and backing plate assembly according to the present invention, FIG. 2 is a diagram showing an embodiment in which grooves are provided in the backing plate, and FIG. 3 is a diagram showing various shapes of grooves provided in the backing plate. FIG. 4 is a sectional view of a conventional sputter target and backing plate assembly, and FIG. 5 is a diagram showing a deformation process in the conventional sputter target and backing plate assembly. 1: Backing plate, 2 varnish batter - 12~
Claims (1)
う材を介して接合してなるスパッターターゲットとバッ
キングプレートの接合体において、バッキングプレート
の接合面に溝を設けたことを特徴とするスパッターター
ゲットとバッキングプレートの接合体。1. A sputter target and backing plate joint formed by joining the sputter target and backing plate via a brazing material, characterized in that a groove is provided on the joint surface of the backing plate. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19419388A JPH0243362A (en) | 1988-08-03 | 1988-08-03 | Joined body of sputtering target and backing plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19419388A JPH0243362A (en) | 1988-08-03 | 1988-08-03 | Joined body of sputtering target and backing plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0243362A true JPH0243362A (en) | 1990-02-13 |
Family
ID=16320497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19419388A Pending JPH0243362A (en) | 1988-08-03 | 1988-08-03 | Joined body of sputtering target and backing plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0243362A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000015863A1 (en) * | 1998-09-11 | 2000-03-23 | Tosoh Smd, Inc. | Low temperature sputter target bonding method and target assemblies produced thereby |
| US6749103B1 (en) | 1998-09-11 | 2004-06-15 | Tosoh Smd, Inc. | Low temperature sputter target bonding method and target assemblies produced thereby |
| US6774339B1 (en) * | 1999-11-09 | 2004-08-10 | Tosoh Smd, Inc. | Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin |
| JP2004344958A (en) * | 2003-05-23 | 2004-12-09 | Sentan Zairyo:Kk | Hybrid material joining metal to carbon-aluminum composite material or silicon carbide-aluminum composite material, and heat exchanger parts using the same |
| US6953145B2 (en) * | 2000-08-05 | 2005-10-11 | Robert Bosch Gmbh | Soldering method for mounting electric components |
| DE112006003537T5 (en) | 2005-12-28 | 2008-12-24 | Advanced Material Technology Co. Ltd., Fuji | sputtering target |
| CN114059028A (en) * | 2021-11-16 | 2022-02-18 | 宁波江丰电子材料股份有限公司 | Brazing structure of copper back plate and processing method thereof |
-
1988
- 1988-08-03 JP JP19419388A patent/JPH0243362A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000015863A1 (en) * | 1998-09-11 | 2000-03-23 | Tosoh Smd, Inc. | Low temperature sputter target bonding method and target assemblies produced thereby |
| EP1115899A1 (en) * | 1998-09-11 | 2001-07-18 | Tosoh Smd, Inc. | Low temperature sputter target bonding method and target assemblies produced thereby |
| US6749103B1 (en) | 1998-09-11 | 2004-06-15 | Tosoh Smd, Inc. | Low temperature sputter target bonding method and target assemblies produced thereby |
| EP1115899A4 (en) * | 1998-09-11 | 2004-09-22 | Tosoh Smd Inc | Low temperature sputter target bonding method and target assemblies produced thereby |
| KR100642034B1 (en) * | 1998-09-11 | 2006-11-03 | 토소우 에스엠디, 인크 | Low temperature sputter target bonding method and target assemblies produced thereby |
| US6774339B1 (en) * | 1999-11-09 | 2004-08-10 | Tosoh Smd, Inc. | Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin |
| US6953145B2 (en) * | 2000-08-05 | 2005-10-11 | Robert Bosch Gmbh | Soldering method for mounting electric components |
| JP2004344958A (en) * | 2003-05-23 | 2004-12-09 | Sentan Zairyo:Kk | Hybrid material joining metal to carbon-aluminum composite material or silicon carbide-aluminum composite material, and heat exchanger parts using the same |
| DE112006003537T5 (en) | 2005-12-28 | 2008-12-24 | Advanced Material Technology Co. Ltd., Fuji | sputtering target |
| DE112006003537B4 (en) | 2005-12-28 | 2017-07-06 | Plansee Se | Method of making a sputtering target assembly |
| CN114059028A (en) * | 2021-11-16 | 2022-02-18 | 宁波江丰电子材料股份有限公司 | Brazing structure of copper back plate and processing method thereof |
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