CH471241A - Method for producing uniform thin layers of high quality from conductive or semiconducting materials and apparatus for carrying out the method - Google Patents

Method for producing uniform thin layers of high quality from conductive or semiconducting materials and apparatus for carrying out the method

Info

Publication number
CH471241A
CH471241A CH1810466A CH1810466A CH471241A CH 471241 A CH471241 A CH 471241A CH 1810466 A CH1810466 A CH 1810466A CH 1810466 A CH1810466 A CH 1810466A CH 471241 A CH471241 A CH 471241A
Authority
CH
Switzerland
Prior art keywords
conductive
carrying
high quality
thin layers
uniform thin
Prior art date
Application number
CH1810466A
Other languages
German (de)
Inventor
Dirk Davidse Pieter
Ray Koster Lawrence
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH471241A publication Critical patent/CH471241A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/085—Vapour deposited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Inorganic Insulating Materials (AREA)
CH1810466A 1965-12-20 1966-12-16 Method for producing uniform thin layers of high quality from conductive or semiconducting materials and apparatus for carrying out the method CH471241A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US51482765A 1965-12-20 1965-12-20
US51485365A 1965-12-20 1965-12-20

Publications (1)

Publication Number Publication Date
CH471241A true CH471241A (en) 1969-04-15

Family

ID=27058328

Family Applications (2)

Application Number Title Priority Date Filing Date
CH1810266A CH469101A (en) 1965-12-20 1966-12-16 Method for producing uniform thin layers of high quality from dielectric material by cathode sputtering and apparatus for carrying out the method
CH1810466A CH471241A (en) 1965-12-20 1966-12-16 Method for producing uniform thin layers of high quality from conductive or semiconducting materials and apparatus for carrying out the method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CH1810266A CH469101A (en) 1965-12-20 1966-12-16 Method for producing uniform thin layers of high quality from dielectric material by cathode sputtering and apparatus for carrying out the method

Country Status (9)

Country Link
US (1) US3525680A (en)
JP (1) JPS4327930B1 (en)
BE (1) BE690690A (en)
CH (2) CH469101A (en)
DE (2) DE1515309B2 (en)
FR (1) FR1505162A (en)
GB (2) GB1118758A (en)
NL (1) NL6617765A (en)
SE (1) SE334083B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3968018A (en) * 1969-09-29 1976-07-06 Warner-Lambert Company Sputter coating method
US3916523A (en) * 1969-09-29 1975-11-04 Warner Lambert Co Coated razor blade
US3904506A (en) * 1972-11-13 1975-09-09 Shatterproof Glass Corp Apparatus for continuous production of sputter-coated glass products
US3860507A (en) * 1972-11-29 1975-01-14 Rca Corp Rf sputtering apparatus and method
US3925182A (en) * 1973-09-25 1975-12-09 Shatterproof Glass Corp Method for continuous production of sputter-coated glass products
US4170662A (en) * 1974-11-05 1979-10-09 Eastman Kodak Company Plasma plating
US4043889A (en) * 1976-01-02 1977-08-23 Sperry Rand Corporation Method of and apparatus for the radio frequency sputtering of a thin film
FR2371524A1 (en) * 1976-11-18 1978-06-16 Alsthom Atlantique PROCESS FOR DEPOSITING A THIN LAYER BY DECOMPOSITION OF A GAS IN A PLASMA
JPS6037188B2 (en) * 1981-08-27 1985-08-24 三菱マテリアル株式会社 sputtering equipment
US4498071A (en) * 1982-09-30 1985-02-05 Dale Electronics, Inc. High resistance film resistor
GB2140460B (en) * 1983-05-27 1986-06-25 Dowty Electronics Ltd Insulated metal substrates
US4693805A (en) * 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
AU2003195A (en) * 1994-06-21 1996-01-04 Boc Group, Inc., The Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3021271A (en) * 1959-04-27 1962-02-13 Gen Mills Inc Growth of solid layers on substrates which are kept under ion bombardment before and during deposition
US3233137A (en) * 1961-08-28 1966-02-01 Litton Systems Inc Method and apparatus for cleansing by ionic bombardment
US3347772A (en) * 1964-03-02 1967-10-17 Schjeldahl Co G T Rf sputtering apparatus including a capacitive lead-in for an rf potential

Also Published As

Publication number Publication date
GB1118758A (en) 1968-07-03
CH469101A (en) 1969-02-28
DE1515310A1 (en) 1969-08-14
US3525680A (en) 1970-08-25
SE334083B (en) 1971-04-05
FR1505162A (en) 1967-12-08
BE690690A (en) 1967-05-16
NL6617765A (en) 1967-06-21
JPS4327930B1 (en) 1968-12-02
GB1118759A (en) 1968-07-03
DE1515309A1 (en) 1969-07-31
DE1515309B2 (en) 1977-11-10

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Legal Events

Date Code Title Description
PL Patent ceased