GB1242492A - Improvements relating to the coating of a substrate by r.f. sputtering - Google Patents
Improvements relating to the coating of a substrate by r.f. sputteringInfo
- Publication number
- GB1242492A GB1242492A GB05260/69A GB1526069A GB1242492A GB 1242492 A GB1242492 A GB 1242492A GB 05260/69 A GB05260/69 A GB 05260/69A GB 1526069 A GB1526069 A GB 1526069A GB 1242492 A GB1242492 A GB 1242492A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- target electrode
- nitride
- target
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title abstract 7
- 239000011248 coating agent Substances 0.000 title abstract 2
- 238000000576 coating method Methods 0.000 title abstract 2
- 238000004544 sputter deposition Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910017083 AlN Inorganic materials 0.000 abstract 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052582 BN Inorganic materials 0.000 abstract 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000005388 borosilicate glass Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 238000005546 reactive sputtering Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000013077 target material Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
1,242,492. R. F. spattering. INTERNATIONAL BUSINESS MACHINES CORP. March 24, 1969 [March 25, 1968], No. 15260/69. Heading C7F. A substrate is coated by R. F. sputtering using a method wherein the substrate is positioned in an ionization chamber so that it is at least partially surrounded by a target electrode, and an R. F. potential is applied between an anode within the chamber and the target electrode whereby material associated with the target electrode or a compound of the material is sputter deposited on said substrate, the size and configuration of the target electrode being such that a single negative glow is formed which surrounds the portion of the substrate upon which the material or compound of material is to be deposited. The substrate may be wire, magnetic tape, or a silicon wafer, and the coating material may be Al, silicon dioxide or another oxide, or a nitride such as silicon nitride, aluminium nitride or boron nitride, applied by reactive sputtering from an oxygen or nitrogen atmosphere as appropriate, or quartz or borosilicate glass or a sulphide sputtered directly. In Fig. 1, an ionization chamber 10 is fed with Ar at 15, evacuated by pump 16, and wires 24 are fed by advancing rollers 29 through the chamber, through air locks 25 and 26, both of which are connected to fast vacuum sources. Electrodes 17 and 18 both bearing target material 22, 23, are placed so that the negative glows of the two plates overlap to form a single negative glow in the region of the substrate. Alternative target configurations are an elongated cylinder, Fig. 4, and elongated members of triangular, rectangular, and other cross-sections, Fig. 7, 6, and 8 (not shown).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71580468A | 1968-03-25 | 1968-03-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1242492A true GB1242492A (en) | 1971-08-11 |
Family
ID=24875552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB05260/69A Expired GB1242492A (en) | 1968-03-25 | 1969-03-24 | Improvements relating to the coating of a substrate by r.f. sputtering |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3627663A (en) |
| DE (1) | DE1914747B2 (en) |
| FR (1) | FR1602787A (en) |
| GB (1) | GB1242492A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2001106A (en) * | 1977-07-14 | 1979-01-24 | Secr Defence | Epitaxial Crystalline Aluminium Nitride |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3855110A (en) * | 1973-11-15 | 1974-12-17 | United Aircraft Corp | Cylindrical rf sputtering apparatus |
| US3901784A (en) * | 1973-11-15 | 1975-08-26 | United Aircraft Corp | Cylindrical rf sputtering apparatus |
| US4183797A (en) * | 1978-12-22 | 1980-01-15 | International Business Machines Corporation | Two-sided bias sputter deposition method and apparatus |
| US4985313A (en) * | 1985-01-14 | 1991-01-15 | Raychem Limited | Wire and cable |
| US4738761A (en) * | 1986-10-06 | 1988-04-19 | Microelectronics Center Of North Carolina | Shared current loop, multiple field apparatus and process for plasma processing |
| NL8602759A (en) * | 1986-10-31 | 1988-05-16 | Bekaert Sa Nv | METHOD AND DEVICE FOR TREATING AN LONG-TERM SUBSTRATE COVERED; AND SUBSTRATES TREATED ACCORDING TO THAT METHOD AND ARTICLES OF POLYMER MATERIAL REINFORCED WITH THESE SUBSTRATES. |
| US5219668A (en) * | 1986-10-31 | 1993-06-15 | N.V. Bekaert S.A. | Process and apparatus for the treatment of coated, elongated substrate, as well as substrates thus treated and articles of polymeric material reinforced with these substrates |
| DE3706218A1 (en) * | 1987-02-26 | 1988-09-08 | Werner Prof Dr Weisweiler | DEVICE AND METHOD FOR CONTINUOUSLY COATING THE INDIVIDUAL FIBERS OF A FIBER BUNDLE WITH SURFACE PROTECTING AND ADHESIVE CARBIDE OR PLASMAPOLYMER FILMS |
| JP2643149B2 (en) * | 1987-06-03 | 1997-08-20 | 株式会社ブリヂストン | Surface treatment method |
| US5045166A (en) * | 1990-05-21 | 1991-09-03 | Mcnc | Magnetron method and apparatus for producing high density ionic gas discharge |
| US5685961A (en) * | 1992-03-27 | 1997-11-11 | P & D Medical Coatings, Inc. | Method for fabrication of metallized medical devices |
| US5472509A (en) * | 1993-11-30 | 1995-12-05 | Neomecs Incorporated | Gas plasma apparatus with movable film liners |
| DE19744060C2 (en) * | 1997-10-06 | 1999-08-12 | Fraunhofer Ges Forschung | Method and device for surface treatment of substrates |
| US6685803B2 (en) | 2001-06-22 | 2004-02-03 | Applied Materials, Inc. | Plasma treatment of processing gases |
| US7198699B2 (en) * | 2002-05-06 | 2007-04-03 | Guardian Industries Corp. | Sputter coating apparatus including ion beam source(s), and corresponding method |
| US8343593B2 (en) * | 2008-05-13 | 2013-01-01 | Sub-One Technology, Inc. | Method of coating inner and outer surfaces of pipes for thermal solar and other applications |
| US10468236B2 (en) * | 2017-06-02 | 2019-11-05 | XEI Scienctific, Inc. | Plasma device with an external RF hollow cathode for plasma cleaning of high vacuum systems |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1926336A (en) * | 1930-09-13 | 1933-09-12 | Fansteel Prod Co Inc | Electrode and method of making same |
| US3233137A (en) * | 1961-08-28 | 1966-02-01 | Litton Systems Inc | Method and apparatus for cleansing by ionic bombardment |
| US3250694A (en) * | 1962-10-17 | 1966-05-10 | Ibm | Apparatus for coating articles by cathode sputtering |
| US3314873A (en) * | 1962-11-28 | 1967-04-18 | Western Electric Co | Method and apparatus for cathode sputtering using a cylindrical cathode |
| US3324019A (en) * | 1962-12-11 | 1967-06-06 | Schjeldahl Co G T | Method of sputtering sequentially from a plurality of cathodes |
| US3347772A (en) * | 1964-03-02 | 1967-10-17 | Schjeldahl Co G T | Rf sputtering apparatus including a capacitive lead-in for an rf potential |
| FR1428243A (en) * | 1964-03-02 | 1966-02-11 | Schjeldahl Co G T | Projection method and apparatus |
| US3420767A (en) * | 1966-03-03 | 1969-01-07 | Control Data Corp | Cathode sputtering apparatus for producing plural coatings in a confined high frequency generated discharge |
-
1968
- 1968-03-25 US US715804A patent/US3627663A/en not_active Expired - Lifetime
- 1968-12-30 FR FR1602787D patent/FR1602787A/fr not_active Expired
-
1969
- 1969-03-22 DE DE19691914747 patent/DE1914747B2/en active Pending
- 1969-03-24 GB GB05260/69A patent/GB1242492A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2001106A (en) * | 1977-07-14 | 1979-01-24 | Secr Defence | Epitaxial Crystalline Aluminium Nitride |
| GB2001106B (en) * | 1977-07-14 | 1982-07-07 | National Research Development Co | Epitaxial crystalline aluminium nitride |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1914747B2 (en) | 1973-01-18 |
| FR1602787A (en) | 1971-01-25 |
| DE1914747A1 (en) | 1970-10-08 |
| US3627663A (en) | 1971-12-14 |
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