GB2001106B - Epitaxial crystalline aluminium nitride - Google Patents

Epitaxial crystalline aluminium nitride

Info

Publication number
GB2001106B
GB2001106B GB7829668A GB7829668A GB2001106B GB 2001106 B GB2001106 B GB 2001106B GB 7829668 A GB7829668 A GB 7829668A GB 7829668 A GB7829668 A GB 7829668A GB 2001106 B GB2001106 B GB 2001106B
Authority
GB
United Kingdom
Prior art keywords
aluminium nitride
crystalline aluminium
epitaxial crystalline
epitaxial
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7829668A
Other versions
GB2001106A (en
Inventor
Peter Raymond Dryburgh
Raymond Ronald Halstead
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
UK Secretary of State for Defence
Original Assignee
National Research Development Corp UK
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK, UK Secretary of State for Defence filed Critical National Research Development Corp UK
Priority to GB7829668A priority Critical patent/GB2001106B/en
Publication of GB2001106A publication Critical patent/GB2001106A/en
Application granted granted Critical
Publication of GB2001106B publication Critical patent/GB2001106B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
GB7829668A 1977-07-14 1978-07-12 Epitaxial crystalline aluminium nitride Expired GB2001106B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7829668A GB2001106B (en) 1977-07-14 1978-07-12 Epitaxial crystalline aluminium nitride

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2970177 1977-07-14
GB7829668A GB2001106B (en) 1977-07-14 1978-07-12 Epitaxial crystalline aluminium nitride

Publications (2)

Publication Number Publication Date
GB2001106A GB2001106A (en) 1979-01-24
GB2001106B true GB2001106B (en) 1982-07-07

Family

ID=26260037

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7829668A Expired GB2001106B (en) 1977-07-14 1978-07-12 Epitaxial crystalline aluminium nitride

Country Status (1)

Country Link
GB (1) GB2001106B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2181917B (en) * 1982-03-11 1987-11-18 Nobuo Mikoshiba Surface acoustic wave device
US4511816A (en) * 1982-03-11 1985-04-16 Nobuo Mikoshiba Surface acoustic wave device using an elastic substrate and an aluminum nitride piezoelectric film
GB2181918B (en) * 1982-03-11 1987-11-18 Nobuo Mikoshiba Surface acoustic wave device
DE3348366C2 (en) * 1982-03-11 1995-11-09 Nobuo Mikoshiba Acoustic surface wave generator

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1084817A (en) * 1963-09-17 1967-09-27 Wacker Chemie Gmbh Process for the monocrystalline deposition of semiconductor compounds
GB1197756A (en) * 1966-11-08 1970-07-08 Texas Instruments Inc Method of Making Thin Continuous Films.
GB1242492A (en) * 1968-03-25 1971-08-11 Ibm Improvements relating to the coating of a substrate by r.f. sputtering
GB1506524A (en) * 1974-06-25 1978-04-05 Matsushita Electric Ind Co Ltd Method of depositing a layer of material in crystalline form

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1084817A (en) * 1963-09-17 1967-09-27 Wacker Chemie Gmbh Process for the monocrystalline deposition of semiconductor compounds
GB1197756A (en) * 1966-11-08 1970-07-08 Texas Instruments Inc Method of Making Thin Continuous Films.
GB1242492A (en) * 1968-03-25 1971-08-11 Ibm Improvements relating to the coating of a substrate by r.f. sputtering
GB1506524A (en) * 1974-06-25 1978-04-05 Matsushita Electric Ind Co Ltd Method of depositing a layer of material in crystalline form

Also Published As

Publication number Publication date
GB2001106A (en) 1979-01-24

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee