GB1244618A - A method of forming a metal contact on an element and a vacuum deposition system that may be used in performing this method - Google Patents

A method of forming a metal contact on an element and a vacuum deposition system that may be used in performing this method

Info

Publication number
GB1244618A
GB1244618A GB59496/68A GB5949668A GB1244618A GB 1244618 A GB1244618 A GB 1244618A GB 59496/68 A GB59496/68 A GB 59496/68A GB 5949668 A GB5949668 A GB 5949668A GB 1244618 A GB1244618 A GB 1244618A
Authority
GB
United Kingdom
Prior art keywords
sputtering
cathode
layer
shield
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB59496/68A
Inventor
George E Bodway
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of GB1244618A publication Critical patent/GB1244618A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C23C14/3478—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/027—Graded interfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

1,244,618. sputtering gold and molybdenum. HEWLETT-PACKARD CO. Dec. 13, 1968 [Feb. 1, 1968], No. 59496/68. Heading C7F. Metal contacts are formed on substrates such as Si semi conductors or thin film circuits by sputtering a first layer of Mo, a second layer of Mo + Au and an outer layer of Au. The sputtering is preferably effected in the apparatus of Specification 1,244,619 or in the apparatus shown in Fig. 7. The Si substrate 10 is placed on anode 18 and sputtering is effected in an argon atmosphere using a filament 22, collector 24, a Mo cathode 26 and a Au cathode 30. A minimum 500 Š thick layer of Mo is first sputtered using shield 28 to prevent sputtering of Au cathode 30. Next a 400-600 A thick layer of mixed Au and Mo is deposited by rotating anode 18 and shield 28 and finally a 4000Š thick layer of Au is sputtered from 30 with shield 28 covering cathode 26.
GB59496/68A 1968-02-01 1968-12-13 A method of forming a metal contact on an element and a vacuum deposition system that may be used in performing this method Expired GB1244618A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70228468A 1968-02-01 1968-02-01

Publications (1)

Publication Number Publication Date
GB1244618A true GB1244618A (en) 1971-09-02

Family

ID=24820578

Family Applications (2)

Application Number Title Priority Date Filing Date
GB59496/68A Expired GB1244618A (en) 1968-02-01 1968-12-13 A method of forming a metal contact on an element and a vacuum deposition system that may be used in performing this method
GB9771/71A Expired GB1244619A (en) 1968-02-01 1968-12-13 Improved sputtering apparatus

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9771/71A Expired GB1244619A (en) 1968-02-01 1968-12-13 Improved sputtering apparatus

Country Status (4)

Country Link
US (1) US3515663A (en)
DE (1) DE1904626A1 (en)
FR (1) FR2001094A1 (en)
GB (2) GB1244618A (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664948A (en) * 1969-11-19 1972-05-23 Texas Instruments Inc Sputtering system
US3986944A (en) * 1975-06-27 1976-10-19 Honeywell Information Systems, Inc. Method for obtaining adhesion of multilayer thin films
US4389295A (en) * 1982-05-06 1983-06-21 Gte Products Corporation Thin film phosphor sputtering process
US5003178A (en) * 1988-11-14 1991-03-26 Electron Vision Corporation Large-area uniform electron source
GB8921666D0 (en) * 1989-09-26 1989-11-08 Peatgrange Ivd Limited Ion vapour deposition apparatus and method
KR950009939B1 (en) * 1990-11-30 1995-09-01 가부시끼가이샤 히다찌세이사꾸쇼 Thin film forming method and semiconductor device thereby
US6429120B1 (en) * 2000-01-18 2002-08-06 Micron Technology, Inc. Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
US6328856B1 (en) 1999-08-04 2001-12-11 Seagate Technology Llc Method and apparatus for multilayer film deposition utilizing rotating multiple magnetron cathode device
US6420262B1 (en) * 2000-01-18 2002-07-16 Micron Technology, Inc. Structures and methods to enhance copper metallization
US7262130B1 (en) * 2000-01-18 2007-08-28 Micron Technology, Inc. Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US6376370B1 (en) 2000-01-18 2002-04-23 Micron Technology, Inc. Process for providing seed layers for using aluminum, copper, gold and silver metallurgy process for providing seed layers for using aluminum, copper, gold and silver metallurgy
GB0222331D0 (en) * 2002-09-26 2002-10-30 Teer Coatings Ltd A method for depositing multilayer coatings with controlled thickness

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3305473A (en) * 1964-08-20 1967-02-21 Cons Vacuum Corp Triode sputtering apparatus for depositing uniform coatings
US3369990A (en) * 1964-12-31 1968-02-20 Ibm Cathodic sputtering apparatus including thermionic means for increasing sputtering efficiency
US3464907A (en) * 1967-02-23 1969-09-02 Victory Eng Corp Triode sputtering apparatus and method using synchronized pulsating current

Also Published As

Publication number Publication date
DE1904626A1 (en) 1969-09-04
FR2001094A1 (en) 1969-09-26
US3515663A (en) 1970-06-02
GB1244619A (en) 1971-09-02

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