GB1294025A - Rf sputtering - Google Patents

Rf sputtering

Info

Publication number
GB1294025A
GB1294025A GB21474/70A GB2147470A GB1294025A GB 1294025 A GB1294025 A GB 1294025A GB 21474/70 A GB21474/70 A GB 21474/70A GB 2147470 A GB2147470 A GB 2147470A GB 1294025 A GB1294025 A GB 1294025A
Authority
GB
United Kingdom
Prior art keywords
chamber
electrode
sputtering
area
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21474/70A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1294025A publication Critical patent/GB1294025A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

1294025 R. F. Sputtering INTERNATIONAL BUSINESS MACHINES CORP 5 May 1970 [2 June 1969] 21474/70 Heading C7F R.F. sputtering apparatus comprises a vacuum chamber, a target holder electrode 12 in the chamber for supporting target 14, a substrate holder electrode 18 opposing and spaced from electrode 12, electrodes 12 and 18 being arranged so as to substantially enclose a region of the chamber between them to prevent the glow discharge from extending to the remainder of the chamber, the ratio of the area of 18 to the area of 12 being above 1 but less than 2À5, and means for applying R. F. potential to 12 and 18. The surface area of electrode 18 may be increased by providing annular recesses 20; sputtering of quartz on to silicon and metal in argon gas is referred to.
GB21474/70A 1969-06-02 1970-05-05 Rf sputtering Expired GB1294025A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82963369A 1969-06-02 1969-06-02

Publications (1)

Publication Number Publication Date
GB1294025A true GB1294025A (en) 1972-10-25

Family

ID=25255069

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21474/70A Expired GB1294025A (en) 1969-06-02 1970-05-05 Rf sputtering

Country Status (5)

Country Link
US (1) US3661761A (en)
JP (1) JPS4822901B1 (en)
DE (1) DE2026321A1 (en)
FR (1) FR2052341A5 (en)
GB (1) GB1294025A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140174919A1 (en) * 2012-12-24 2014-06-26 Hon Hai Precision Industry Co., Ltd. Electrode having heat sinks and coating device

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767559A (en) * 1970-06-24 1973-10-23 Eastman Kodak Co Sputtering apparatus with accordion pleated anode means
FR2119930B1 (en) * 1970-12-31 1974-08-19 Ibm
JPS536963Y2 (en) * 1973-05-08 1978-02-22
JPS5441522Y2 (en) * 1973-10-25 1979-12-05
JPS50119203U (en) * 1974-03-14 1975-09-29
US4036723A (en) * 1975-08-21 1977-07-19 International Business Machines Corporation RF bias sputtering method for producing insulating films free of surface irregularities
GB1544172A (en) * 1976-03-03 1979-04-11 Int Plasma Corp Gas plasma reactor and process
US4035276A (en) * 1976-04-29 1977-07-12 Ibm Corporation Making coplanar layers of thin films
US4029562A (en) * 1976-04-29 1977-06-14 Ibm Corporation Forming feedthrough connections for multi-level interconnections metallurgy systems
DE2705611A1 (en) * 1977-02-10 1978-08-17 Siemens Ag METHOD OF COVERING A FIRST LAYER OR SEQUENCE OF LAYERS ON A SUBSTRATE WITH A FURTHER SECOND LAYER BY SPUTTERING
US4153528A (en) * 1978-06-26 1979-05-08 International Business Machines Corporation Contoured quartz anode plate
US4349409A (en) * 1980-05-12 1982-09-14 Fujitsu Limited Method and apparatus for plasma etching
US4396458A (en) * 1981-12-21 1983-08-02 International Business Machines Corporation Method for forming planar metal/insulator structures
EP0202572B1 (en) * 1985-05-13 1993-12-15 Nippon Telegraph And Telephone Corporation Method for forming a planarized aluminium thin film
CH668565A5 (en) * 1986-06-23 1989-01-13 Balzers Hochvakuum METHOD AND ARRANGEMENT FOR SPRAYING A MATERIAL AT HIGH FREQUENCY.
US6248219B1 (en) * 1986-06-23 2001-06-19 Unaxis Balzers Aktiengesellschaft Process and apparatus for sputter etching or sputter coating
US4756810A (en) * 1986-12-04 1988-07-12 Machine Technology, Inc. Deposition and planarizing methods and apparatus
US5490910A (en) * 1992-03-09 1996-02-13 Tulip Memory Systems, Inc. Circularly symmetric sputtering apparatus with hollow-cathode plasma devices
US6942764B1 (en) 1995-08-24 2005-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Arc-sprayed shield for pre-sputter etching chamber
US6342135B1 (en) * 1995-11-02 2002-01-29 Taiwan Semiconductor Manufacturing Company Sputter etching chamber with improved uniformity
US6436253B1 (en) 1998-05-20 2002-08-20 Taiwan Semiconductor Manufacturing Company Sputter etching chamber with improved uniformity
US6475400B2 (en) 2001-02-26 2002-11-05 Trw Inc. Method for controlling the sheet resistance of thin film resistors
US20040226516A1 (en) * 2003-05-13 2004-11-18 Daniel Timothy J. Wafer pedestal cover
EP2368258B1 (en) * 2008-11-24 2017-12-20 Evatec AG Rf sputtering arrangement
WO2010073207A1 (en) 2008-12-23 2010-07-01 Oc Oerlikon Balzers Ag Rf sputtering arrangement
US11217434B2 (en) 2016-12-27 2022-01-04 Evatec Ag RF capacitive coupled dual frequency etch reactor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140174919A1 (en) * 2012-12-24 2014-06-26 Hon Hai Precision Industry Co., Ltd. Electrode having heat sinks and coating device

Also Published As

Publication number Publication date
JPS4822901B1 (en) 1973-07-10
FR2052341A5 (en) 1971-04-09
DE2026321A1 (en) 1970-12-10
US3661761A (en) 1972-05-09

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee