GB1257766A - - Google Patents

Info

Publication number
GB1257766A
GB1257766A GB1257766DA GB1257766A GB 1257766 A GB1257766 A GB 1257766A GB 1257766D A GB1257766D A GB 1257766DA GB 1257766 A GB1257766 A GB 1257766A
Authority
GB
United Kingdom
Prior art keywords
anode
sputtering apparatus
cathode
sputtering
sputtered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1257766A publication Critical patent/GB1257766A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C23C14/3478—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

1,257,766. Sputtering apparatus. INTERNATIONAL BUSINESS MACHINES CORP. Aug. 12, 1970 [Sept. 10, 1969], No. 38802/70. Heading C7F. A D.C. or R.F. sputtering apparatus has a cooled cathode 11 of concave shape with a layer 29 of material to be sputtered and a ground shield, and an adjustably mounted ground anode 12 with an aperture 38 which acts as a mask. The substrate is supported on a table 40 movable along two axes. Electrons are supplied by a filament 42 and anode 46. In a modification Fig. 2 (not shown) the sputtering material, e.g. Cu, may be arranged on the cathode with parts in single crystal form.
GB1257766D 1969-09-10 1970-08-12 Expired GB1257766A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85676269A 1969-09-10 1969-09-10

Publications (1)

Publication Number Publication Date
GB1257766A true GB1257766A (en) 1971-12-22

Family

ID=25324445

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1257766D Expired GB1257766A (en) 1969-09-10 1970-08-12

Country Status (5)

Country Link
US (1) US3669871A (en)
JP (1) JPS4817987B1 (en)
DE (1) DE2042023A1 (en)
FR (1) FR2060928A5 (en)
GB (1) GB1257766A (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4026787A (en) * 1974-01-25 1977-05-31 Coulter Information Systems, Inc. Thin film deposition apparatus using segmented target means
US3988232A (en) * 1974-06-25 1976-10-26 Matsushita Electric Industrial Co., Ltd. Method of making crystal films
US4096055A (en) * 1976-12-29 1978-06-20 Johnson Andrew G Electron microscopy coating apparatus and methods
JPS54144891U (en) * 1978-03-31 1979-10-08
US4201654A (en) * 1978-10-06 1980-05-06 The United States Of America As Represented By The Secretary Of The Air Force Anode assisted sputter etch and deposition apparatus
JPS55151704A (en) * 1979-05-15 1980-11-26 Matsushita Electric Works Ltd Illuminator attached to ceiling
GB8334369D0 (en) * 1983-12-23 1984-02-01 Ion Tech Ltd Sputter deposition of alloys & c
US5215639A (en) * 1984-10-09 1993-06-01 Genus, Inc. Composite sputtering target structures and process for producing such structures
US4597847A (en) * 1984-10-09 1986-07-01 Iodep, Inc. Non-magnetic sputtering target
US4610774A (en) * 1984-11-14 1986-09-09 Hitachi, Ltd. Target for sputtering
US4957605A (en) * 1989-04-17 1990-09-18 Materials Research Corporation Method and apparatus for sputter coating stepped wafers
US6024843A (en) * 1989-05-22 2000-02-15 Novellus Systems, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
US5196400A (en) * 1990-08-17 1993-03-23 At&T Bell Laboratories High temperature superconductor deposition by sputtering
KR100231397B1 (en) * 1991-01-28 1999-11-15 튜그룰 야사르 Target for cathode sputtering
CA2065581C (en) * 1991-04-22 2002-03-12 Andal Corp. Plasma enhancement apparatus and method for physical vapor deposition
US5556525A (en) * 1994-09-30 1996-09-17 Advanced Micro Devices, Inc. PVD sputter system having nonplanar target configuration and methods for operating same
US6042706A (en) * 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
US6500321B1 (en) * 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
US6277253B1 (en) * 1999-10-06 2001-08-21 Applied Materials, Inc. External coating of tungsten or tantalum or other refractory metal on IMP coils
US6699375B1 (en) 2000-06-29 2004-03-02 Applied Materials, Inc. Method of extending process kit consumable recycling life
US7820020B2 (en) * 2005-02-03 2010-10-26 Applied Materials, Inc. Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
US8821701B2 (en) 2010-06-02 2014-09-02 Clifton Higdon Ion beam sputter target and method of manufacture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3250694A (en) * 1962-10-17 1966-05-10 Ibm Apparatus for coating articles by cathode sputtering
FR1502647A (en) * 1965-12-17 1968-02-07
US3483114A (en) * 1967-05-01 1969-12-09 Victory Eng Corp Rf sputtering apparatus including a wave reflector positioned behind the target

Also Published As

Publication number Publication date
US3669871A (en) 1972-06-13
DE2042023A1 (en) 1971-03-11
FR2060928A5 (en) 1971-06-18
JPS4817987B1 (en) 1973-06-02

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee