FR2232832A1 - Discharge control in cathodic sputtering - using voltage variation on auxiliary insulated electrode to adjust gas supply - Google Patents

Discharge control in cathodic sputtering - using voltage variation on auxiliary insulated electrode to adjust gas supply

Info

Publication number
FR2232832A1
FR2232832A1 FR7320502A FR7320502A FR2232832A1 FR 2232832 A1 FR2232832 A1 FR 2232832A1 FR 7320502 A FR7320502 A FR 7320502A FR 7320502 A FR7320502 A FR 7320502A FR 2232832 A1 FR2232832 A1 FR 2232832A1
Authority
FR
France
Prior art keywords
gas supply
auxiliary
discharge control
voltage variation
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7320502A
Other languages
French (fr)
Other versions
FR2232832B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7320502A priority Critical patent/FR2232832A1/en
Publication of FR2232832A1 publication Critical patent/FR2232832A1/en
Application granted granted Critical
Publication of FR2232832B1 publication Critical patent/FR2232832B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The sputtering chamber contains >=1 target electrode supporting the bombarded material and a second electrode carrying the substrates, the novelty being that the gas flow is controlled by variation of the potential affecting an auxiliary, insulated, metal electrode immersed in the plasma. The variations in potential are pref. fed on an amplifier controlling a motor which operates a valve on the gas-supply. The process thus links the gas supply to the mean dynamic press. in the plasma measured by the auto-polarisation of the insulated, auxiliary electrode, thus giving better control in the deposition of thin films.
FR7320502A 1973-06-06 1973-06-06 Discharge control in cathodic sputtering - using voltage variation on auxiliary insulated electrode to adjust gas supply Granted FR2232832A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7320502A FR2232832A1 (en) 1973-06-06 1973-06-06 Discharge control in cathodic sputtering - using voltage variation on auxiliary insulated electrode to adjust gas supply

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7320502A FR2232832A1 (en) 1973-06-06 1973-06-06 Discharge control in cathodic sputtering - using voltage variation on auxiliary insulated electrode to adjust gas supply

Publications (2)

Publication Number Publication Date
FR2232832A1 true FR2232832A1 (en) 1975-01-03
FR2232832B1 FR2232832B1 (en) 1976-11-12

Family

ID=9120570

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7320502A Granted FR2232832A1 (en) 1973-06-06 1973-06-06 Discharge control in cathodic sputtering - using voltage variation on auxiliary insulated electrode to adjust gas supply

Country Status (1)

Country Link
FR (1) FR2232832A1 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166784A (en) * 1978-04-28 1979-09-04 Applied Films Lab, Inc. Feedback control for vacuum deposition apparatus
US4166783A (en) * 1978-04-17 1979-09-04 Varian Associates, Inc. Deposition rate regulation by computer control of sputtering systems
FR2425480A1 (en) * 1978-05-13 1979-12-07 Leybold Heraeus Gmbh & Co Kg METHOD AND DEVICE FOR REGULATING THE DISCHARGE IN A CATHODIC SPRAYING EQUIPMENT
US4201645A (en) * 1978-06-26 1980-05-06 Robert J. Ferran Closed-loop sputtering system and method of operating same
EP0031704A2 (en) * 1979-12-26 1981-07-08 Western Electric Company, Incorporated Improvements in or relating to apparatus for a reative plasma process
US4336119A (en) * 1981-01-29 1982-06-22 Ppg Industries, Inc. Method of and apparatus for control of reactive sputtering deposition
US4500408A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Apparatus for and method of controlling sputter coating
US5476838A (en) * 1992-02-14 1995-12-19 Forschungszentrum Julich Process for producing thin layers by means of reactive cathode sputtering and apparatus for implementing the process
EP1701598A1 (en) * 2005-03-09 2006-09-13 Askair technologies AG Method of operating a flow-through plasma device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985115A (en) 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3278407A (en) * 1963-06-26 1966-10-11 Ibm Deposition of thin film by sputtering
GB1202917A (en) * 1966-11-09 1970-08-19 Berghaus Elektrophysik Anst An electrical system for preventing arcing in a high-intensity glow discharge apparatus
FR2082505A5 (en) * 1970-03-18 1971-12-10 Radiotechnique Compelec

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3278407A (en) * 1963-06-26 1966-10-11 Ibm Deposition of thin film by sputtering
GB1202917A (en) * 1966-11-09 1970-08-19 Berghaus Elektrophysik Anst An electrical system for preventing arcing in a high-intensity glow discharge apparatus
FR2082505A5 (en) * 1970-03-18 1971-12-10 Radiotechnique Compelec

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166783A (en) * 1978-04-17 1979-09-04 Varian Associates, Inc. Deposition rate regulation by computer control of sputtering systems
US4166784A (en) * 1978-04-28 1979-09-04 Applied Films Lab, Inc. Feedback control for vacuum deposition apparatus
FR2425480A1 (en) * 1978-05-13 1979-12-07 Leybold Heraeus Gmbh & Co Kg METHOD AND DEVICE FOR REGULATING THE DISCHARGE IN A CATHODIC SPRAYING EQUIPMENT
US4201645A (en) * 1978-06-26 1980-05-06 Robert J. Ferran Closed-loop sputtering system and method of operating same
EP0031704A2 (en) * 1979-12-26 1981-07-08 Western Electric Company, Incorporated Improvements in or relating to apparatus for a reative plasma process
EP0031704A3 (en) * 1979-12-26 1982-08-04 Western Electric Company, Incorporated Improvements in or relating to reactive plasma processes and apparatus therefor
US4336119A (en) * 1981-01-29 1982-06-22 Ppg Industries, Inc. Method of and apparatus for control of reactive sputtering deposition
US4500408A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Apparatus for and method of controlling sputter coating
US5476838A (en) * 1992-02-14 1995-12-19 Forschungszentrum Julich Process for producing thin layers by means of reactive cathode sputtering and apparatus for implementing the process
EP1701598A1 (en) * 2005-03-09 2006-09-13 Askair technologies AG Method of operating a flow-through plasma device
WO2006094913A1 (en) * 2005-03-09 2006-09-14 Askair Technologies Ag Method of operating a flow-through plasma device

Also Published As

Publication number Publication date
FR2232832B1 (en) 1976-11-12

Similar Documents

Publication Publication Date Title
US4254159A (en) Method of producing gold-color coatings
US5556520A (en) Method for controlling a reactive sputtering process
GB1294025A (en) Rf sputtering
FR2232832A1 (en) Discharge control in cathodic sputtering - using voltage variation on auxiliary insulated electrode to adjust gas supply
AU565327B2 (en) Cathodic sputtering in a reactive gas
GB1400371A (en) Production of thin films of tantalum
KR930008185A (en) Method and apparatus for reactive coating of base materials
GB1405489A (en) Sputtering apparatus
US2955998A (en) Process for carrying out technical operations in a glow discharge
EP0686708A4 (en) Film forming method and film forming apparatus
US5413684A (en) Method and apparatus for regulating a degree of reaction in a coating process
GB1257015A (en)
ES8703534A1 (en) Coating apparatus.
JPS5534689A (en) Sputtering device
CN112359338A (en) Semiconductor process equipment and deformation control method of wafer
GB1435812A (en) Method of making a razor blade
EP0032709A3 (en) Apparatus and method for the (patterned) coating of a substrate by cathodic sputtering and use thereof
JPS57120669A (en) Sputtering apparatus
JPS56163262A (en) Method and apparatus for forming oxidation and weather resistant film after surface treatment
JPH01184275A (en) Sputtering device
JPS6479369A (en) Method and device for film formation by sputtering
KR950006830B1 (en) Process for supporting equalty evaporating rates and chemical composites of a reactive ion-plating apparatus
JP2001234337A (en) Sputtering system and film deposition method
GB1314883A (en) Manufacturing target electrodes for x-ray tubes
Markowski et al. The parameters of a discharge in an AT-1 biased activated reactive evaporation system for TiN deposition

Legal Events

Date Code Title Description
ST Notification of lapse