GB1394655A - Deposition of thin layers from the vapour phase under the simultaneous action of an ionised gas - Google Patents

Deposition of thin layers from the vapour phase under the simultaneous action of an ionised gas

Info

Publication number
GB1394655A
GB1394655A GB555773A GB555773A GB1394655A GB 1394655 A GB1394655 A GB 1394655A GB 555773 A GB555773 A GB 555773A GB 555773 A GB555773 A GB 555773A GB 1394655 A GB1394655 A GB 1394655A
Authority
GB
United Kingdom
Prior art keywords
chamber
electrode
gas
deposition
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB555773A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Balzers Patent und Beteiligungs AG
Original Assignee
Balzers Patent und Beteiligungs AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers Patent und Beteiligungs AG filed Critical Balzers Patent und Beteiligungs AG
Publication of GB1394655A publication Critical patent/GB1394655A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

1394655 Vapour deposition in ionized gas BALZERS PATENT - & BETEILIGUNGS-AG 5 Feb 1973 [6 March 1972] 5557/73 Heading C7F Vapour deposition apparatus comprises a chamber divided into sub-chambers connected by a gas flow throttling point (e.g. a small hole in tube 7), the first sub-chamber being connected to a supply 17 of gas to be ionized, and having therein one single electrode which co-operates with a counter-electrode for establishing an electric discharge in the gas, the counter-electrode and a vapourizing device 3, as well as holders 4 for substrates 5, being in the second sub-chamber 1 which constitutes a vapour-deposition chamber and is connected to a vacuum pump 6 for maintaining a pressure drop between the sub-chambers. Said electrode may be the walls of the gas inlet chamber shown, or may be a hollow tube through which gas, such as 02 for deposition of oxides, from 17 is fed; in this case the chamber walls may be insulating and hollow, for passage of cooling fluid; said counter-electrode may be substrate holder 4, or the wall of chamber 1; usually the counterelectrode is earthed, and the electrode is negative; said throttling point may be as shown, or may be a small orifice in a plate, Fig. 3 (not shown).
GB555773A 1972-03-06 1973-02-05 Deposition of thin layers from the vapour phase under the simultaneous action of an ionised gas Expired GB1394655A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH327572A CH565869A5 (en) 1972-03-06 1972-03-06

Publications (1)

Publication Number Publication Date
GB1394655A true GB1394655A (en) 1975-05-21

Family

ID=4252464

Family Applications (1)

Application Number Title Priority Date Filing Date
GB555773A Expired GB1394655A (en) 1972-03-06 1973-02-05 Deposition of thin layers from the vapour phase under the simultaneous action of an ionised gas

Country Status (7)

Country Link
JP (1) JPS5411798B2 (en)
AT (1) AT319007B (en)
CH (1) CH565869A5 (en)
DE (1) DE2305359C3 (en)
FR (1) FR2174967B1 (en)
GB (1) GB1394655A (en)
NL (1) NL151137B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170822A (en) * 1985-01-31 1986-08-13 Sharp Kk A method for the production of substrates coated with a uniform dispersion of extremely fine granules
GB2194555A (en) * 1986-07-31 1988-03-09 Nippon Telegraph & Telephone Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691437A (en) * 1979-12-26 1981-07-24 Nippon Hoso Kyokai <Nhk> Preparation of metallized element
GB2085482B (en) * 1980-10-06 1985-03-06 Optical Coating Laboratory Inc Forming thin film oxide layers using reactive evaporation techniques
JPS6115967A (en) * 1984-06-29 1986-01-24 Sumitomo Electric Ind Ltd Surface treatment

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170822A (en) * 1985-01-31 1986-08-13 Sharp Kk A method for the production of substrates coated with a uniform dispersion of extremely fine granules
US4654229A (en) * 1985-01-31 1987-03-31 Sharp Kabushiki Kaisha Method for the production of substrates with a uniform dispersion of extremely fine granules
GB2170822B (en) * 1985-01-31 1989-06-07 Sharp Kk A method for the production of substrates having a uniform dispersion of ultra fine granules deposited thereon
GB2194555A (en) * 1986-07-31 1988-03-09 Nippon Telegraph & Telephone Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
GB2194555B (en) * 1986-07-31 1991-02-13 Nippon Telegraph & Telephone Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
US5016563A (en) * 1986-07-31 1991-05-21 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film

Also Published As

Publication number Publication date
FR2174967A1 (en) 1973-10-19
DE2305359A1 (en) 1973-09-13
NL151137B (en) 1976-10-15
NL7205592A (en) 1973-09-10
DE2305359B2 (en) 1975-07-17
DE2305359C3 (en) 1980-01-10
FR2174967B1 (en) 1977-04-22
CH565869A5 (en) 1975-08-29
JPS5411798B2 (en) 1979-05-17
AT319007B (en) 1974-11-25
JPS48102076A (en) 1973-12-21

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee