GB1089967A - Improvements in or relating to arrangements for the manufacture of electronic components comprising thin films - Google Patents

Improvements in or relating to arrangements for the manufacture of electronic components comprising thin films

Info

Publication number
GB1089967A
GB1089967A GB797065A GB797065A GB1089967A GB 1089967 A GB1089967 A GB 1089967A GB 797065 A GB797065 A GB 797065A GB 797065 A GB797065 A GB 797065A GB 1089967 A GB1089967 A GB 1089967A
Authority
GB
United Kingdom
Prior art keywords
substrate
arrangements
relating
ion beam
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB797065A
Inventor
Manfred Von Ardenne
Siegfried Schiller
Ulrich Heisig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HERMSDORF KERAMIK VEB
Keramische Werke Hermsdorf VEB
Original Assignee
HERMSDORF KERAMIK VEB
Keramische Werke Hermsdorf VEB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HERMSDORF KERAMIK VEB, Keramische Werke Hermsdorf VEB filed Critical HERMSDORF KERAMIK VEB
Publication of GB1089967A publication Critical patent/GB1089967A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

<PICT:1089967/C6-C7/1> In apparatus for coating a substrate 12 with material, e.g. an alloy, sputtered from a thin strip 11 under bombardment by an ion beam, the substrate chamber 5, which is maintained at a pressure of 10-3 mm. Hg., communicates with the ion beam accelerating chamber 3, which is maintained at a pressure of 10-4 to 10-5 mm. Hg., through a circular, square or rectangular tube 10 for the passage of the beam and which also offers a resistance to gas flow. Gas, e.g. oxygen may be introduced into chamber 5 for reaction with the atomized material. The ion beam may be deflected on to the substrate 12 for cleaning purposes. The strip 11 and the substrate 12 may each be moved continuously or discontinuously. The strip has a heating or cooling device 16 and the substrate a heater 20.
GB797065A 1964-12-28 1965-02-24 Improvements in or relating to arrangements for the manufacture of electronic components comprising thin films Expired GB1089967A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEV0027457 1964-12-28

Publications (1)

Publication Number Publication Date
GB1089967A true GB1089967A (en) 1967-11-08

Family

ID=7583408

Family Applications (1)

Application Number Title Priority Date Filing Date
GB797065A Expired GB1089967A (en) 1964-12-28 1965-02-24 Improvements in or relating to arrangements for the manufacture of electronic components comprising thin films

Country Status (3)

Country Link
DE (1) DE1515318A1 (en)
FR (1) FR1422539A (en)
GB (1) GB1089967A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2824818A1 (en) * 1977-06-06 1978-12-07 William James Dr King ION BEAM SPUTTER IMPLANTING PROCEDURE
US4182742A (en) * 1976-06-19 1980-01-08 G. V. Planer Limited Chemical synthesis apparatus having differential pumping means
GB2164489A (en) * 1984-07-04 1986-03-19 Univ Salford Apparatus for and a method of modifying the properties of a material
GB2194555A (en) * 1986-07-31 1988-03-09 Nippon Telegraph & Telephone Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
GB2208875A (en) * 1987-08-21 1989-04-19 Scient Coatings Depositing surface layers using ion beans
GB2213501A (en) * 1987-12-11 1989-08-16 Plessey Co Plc Production of superconducting thin films by ion beam sputtering from a single ceramic target
DE3904991A1 (en) * 1989-02-18 1990-08-23 Leybold Ag Cathode sputtering device
WO2001011107A1 (en) * 1999-08-04 2001-02-15 General Electric Company Electron beam physical vapor deposition apparatus
EP1693701A1 (en) * 2005-02-18 2006-08-23 Seiko Epson Corporation Method of forming inorganic orientation film, inorganic orientation film, substrate for electronic devices, liquid crystal panel, and electronic equipment

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2204709A1 (en) * 1972-10-27 1974-05-24 Anvar Deposition of thin layers under vacuum - by ion bombardment of high melting point materials e.g. platinum
FR2218652B1 (en) * 1973-02-20 1976-09-10 Thomson Csf
US4142958A (en) * 1978-04-13 1979-03-06 Litton Systems, Inc. Method for fabricating multi-layer optical films
DE2857102C2 (en) * 1978-07-08 1983-12-01 Wolfgang Ing.(grad.) 7981 Grünkraut Kieferle Device for diffusing in and depositing a metal or alloy layer on an electrically conductive workpiece
DE2830134C2 (en) 1978-07-08 1983-12-08 Wolfgang Ing.(grad.) 7981 Grünkraut Kieferle Process for depositing a metal or alloy layer on an electrically conductive workpiece

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4182742A (en) * 1976-06-19 1980-01-08 G. V. Planer Limited Chemical synthesis apparatus having differential pumping means
DE2824818A1 (en) * 1977-06-06 1978-12-07 William James Dr King ION BEAM SPUTTER IMPLANTING PROCEDURE
GB2164489A (en) * 1984-07-04 1986-03-19 Univ Salford Apparatus for and a method of modifying the properties of a material
GB2194555A (en) * 1986-07-31 1988-03-09 Nippon Telegraph & Telephone Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
GB2194555B (en) * 1986-07-31 1991-02-13 Nippon Telegraph & Telephone Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
US5016563A (en) * 1986-07-31 1991-05-21 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
GB2208875A (en) * 1987-08-21 1989-04-19 Scient Coatings Depositing surface layers using ion beans
GB2213501A (en) * 1987-12-11 1989-08-16 Plessey Co Plc Production of superconducting thin films by ion beam sputtering from a single ceramic target
DE3904991A1 (en) * 1989-02-18 1990-08-23 Leybold Ag Cathode sputtering device
WO2001011107A1 (en) * 1999-08-04 2001-02-15 General Electric Company Electron beam physical vapor deposition apparatus
EP1693701A1 (en) * 2005-02-18 2006-08-23 Seiko Epson Corporation Method of forming inorganic orientation film, inorganic orientation film, substrate for electronic devices, liquid crystal panel, and electronic equipment

Also Published As

Publication number Publication date
DE1515318A1 (en) 1969-07-31
FR1422539A (en) 1965-12-24

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