GB1181559A - Improvements in or relating to the Deposition of Insulating Films of Silicon Nitride. - Google Patents
Improvements in or relating to the Deposition of Insulating Films of Silicon Nitride.Info
- Publication number
- GB1181559A GB1181559A GB4396567A GB4396567A GB1181559A GB 1181559 A GB1181559 A GB 1181559A GB 4396567 A GB4396567 A GB 4396567A GB 4396567 A GB4396567 A GB 4396567A GB 1181559 A GB1181559 A GB 1181559A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon nitride
- plasma
- sputtering
- cathode
- sept
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
Abstract
1,181,559. Depositing silicon nitride by cathode sputtering. INTERNATIONAL BUSINESS MACHINES CORP. Sept.27, 1967 [Sept. 30, 1966], No.43965/67. Addition to 1,118,757. Heading C7F. A silicon nitride film is formed on a substrate, e.g. semi-conductor wafers 50 on a holder 42, supported in a plasma containing Si and N 2 by R. F. sputtering, the variables plasma pressure, substrate temperature and power density being chosen so that the film produced has such a density that it can be etched by a buffered HF etchant solution at a rate between 2 and 10 Š/sec. As shown, N 2 supplying gas is bled through valve 14 and a target 20 of pure Si is mounted on or positioned adjacent a metal cathode 22 insulated by a ceramic seal 26 from a water-cooled supporting column 24 attached to the vacuum chamber top plate 11. The column 24 may support an earthed shield 30 partially enclosing the cathode to protect it from unwanted sputtering. Electromagnets 44 may be used to concentrate the glow discharge by a magnetic field. The plasma preferably includes 100-50, 000 ppm of trace impurity 0 2 , CO 2 , N 2 0, H 2 0 2 and/or H 2 0. Preferably the substrate temperature is maintained at 200- 300‹ C., and the plasma pressure (of N 2 gas) at 4-20 x 10<SP>-3</SP> torr, to result in a deposition rate of at least 20 A/min.; the power density applied is preferably 0.5-3 watts/sq. cm. The deposited film may be densified by annealing at 600‹ C. in N 2 , inert gas e.g. A or He and/or NH 3 .
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US494789A US3419761A (en) | 1965-10-11 | 1965-10-11 | Method for depositing silicon nitride insulating films and electric devices incorporating such films |
| US58317566A | 1966-09-30 | 1966-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1181559A true GB1181559A (en) | 1970-02-18 |
Family
ID=38819281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4396567A Expired GB1181559A (en) | 1965-10-11 | 1967-09-27 | Improvements in or relating to the Deposition of Insulating Films of Silicon Nitride. |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR93097E (en) |
| GB (1) | GB1181559A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448701A (en) * | 2014-09-24 | 2016-03-30 | 朗姆研究公司 | Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film |
| US10074543B2 (en) | 2016-08-31 | 2018-09-11 | Lam Research Corporation | High dry etch rate materials for semiconductor patterning applications |
| US10134579B2 (en) | 2016-11-14 | 2018-11-20 | Lam Research Corporation | Method for high modulus ALD SiO2 spacer |
| US10141505B2 (en) | 2015-09-24 | 2018-11-27 | Lam Research Corporation | Bromine containing silicon precursors for encapsulation layers |
| US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
| US10454029B2 (en) | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
| US10629435B2 (en) | 2016-07-29 | 2020-04-21 | Lam Research Corporation | Doped ALD films for semiconductor patterning applications |
| US10804099B2 (en) | 2014-11-24 | 2020-10-13 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
| US10832908B2 (en) | 2016-11-11 | 2020-11-10 | Lam Research Corporation | Self-aligned multi-patterning process flow with ALD gapfill spacer mask |
| US11404275B2 (en) | 2018-03-02 | 2022-08-02 | Lam Research Corporation | Selective deposition using hydrolysis |
-
1967
- 1967-08-17 FR FR06008662A patent/FR93097E/en not_active Expired
- 1967-09-27 GB GB4396567A patent/GB1181559A/en not_active Expired
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448701B (en) * | 2014-09-24 | 2018-10-19 | 朗姆研究公司 | The method and apparatus for uniformly reducing wet etch rate in the feature of silicon nitride film |
| CN109609928A (en) * | 2014-09-24 | 2019-04-12 | 朗姆研究公司 | Uniformly reduce the method and apparatus of wet etch rate in the feature of silicon nitride film |
| CN105448701A (en) * | 2014-09-24 | 2016-03-30 | 朗姆研究公司 | Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film |
| US10804099B2 (en) | 2014-11-24 | 2020-10-13 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
| US10141505B2 (en) | 2015-09-24 | 2018-11-27 | Lam Research Corporation | Bromine containing silicon precursors for encapsulation layers |
| US10629435B2 (en) | 2016-07-29 | 2020-04-21 | Lam Research Corporation | Doped ALD films for semiconductor patterning applications |
| US10074543B2 (en) | 2016-08-31 | 2018-09-11 | Lam Research Corporation | High dry etch rate materials for semiconductor patterning applications |
| US10454029B2 (en) | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
| US10832908B2 (en) | 2016-11-11 | 2020-11-10 | Lam Research Corporation | Self-aligned multi-patterning process flow with ALD gapfill spacer mask |
| US10134579B2 (en) | 2016-11-14 | 2018-11-20 | Lam Research Corporation | Method for high modulus ALD SiO2 spacer |
| US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
| US10658172B2 (en) | 2017-09-13 | 2020-05-19 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
| US11404275B2 (en) | 2018-03-02 | 2022-08-02 | Lam Research Corporation | Selective deposition using hydrolysis |
Also Published As
| Publication number | Publication date |
|---|---|
| FR93097E (en) | 1969-02-07 |
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