GB1133936A - Method and apparatus for forming tenacious deposits on a surface - Google Patents
Method and apparatus for forming tenacious deposits on a surfaceInfo
- Publication number
- GB1133936A GB1133936A GB26790/66A GB2679066A GB1133936A GB 1133936 A GB1133936 A GB 1133936A GB 26790/66 A GB26790/66 A GB 26790/66A GB 2679066 A GB2679066 A GB 2679066A GB 1133936 A GB1133936 A GB 1133936A
- Authority
- GB
- United Kingdom
- Prior art keywords
- inert gas
- target
- ion
- june
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000011261 inert gas Substances 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 238000010884 ion-beam technique Methods 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 2
- 239000011343 solid material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 abstract 1
- 229910010413 TiO 2 Inorganic materials 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- -1 dielectric Substances 0.000 abstract 1
- 229910052743 krypton Inorganic materials 0.000 abstract 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000013077 target material Substances 0.000 abstract 1
- 229910052724 xenon Inorganic materials 0.000 abstract 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/084—Ion implantation of compound devices
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
1,133,936. Ion beam tubes. ION PHYSICS CORP. 15 June, 1966 [16 June, 1965], No. 26790/66. Heading H1D. [Also in Division C7] A tenacious deposit of a solid material is formed on a substrate 18, e.g. of glass, metal or polymerized ethylene terephthalate, by directing an inert gas ion or atom beam under a vacuum of less than 10<SP>-5</SP> Torr e.g. in a vacuum chamber 10, 26 at a target 14 of the solid material at an energy e.g. 5-50 KEV sufficient to remove particles therefrom, and placing the substrate e.g. on a support 19 in the path of the removed particles. As shown an ion beam from a duoplasmatron source 24, wherein inert gas is fed through a capillary A to a heated cathode 27 surrounded by a solenoid 29 and intermediate electrode 28, may be neutralized e.g. by a heated Ta filament 37 to form atoms which strike the target. The inert gas may be argon, xenon or krypton. The target material may be a metallic or non-metallic element or its oxide, a ceramic, dielectric, semi-conductor or glass, e.g. C, Si, Al, SiC, Ti, SiO 2 , TiO 2 , Ta, W. A capacitor may be formed by applying a SiO 2 film to a metal base followed by a metal film.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46436565A | 1965-06-16 | 1965-06-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1133936A true GB1133936A (en) | 1968-11-20 |
Family
ID=23843654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB26790/66A Expired GB1133936A (en) | 1965-06-16 | 1966-06-15 | Method and apparatus for forming tenacious deposits on a surface |
Country Status (4)
Country | Link |
---|---|
US (1) | US3472751A (en) |
DE (1) | DE1521327A1 (en) |
GB (1) | GB1133936A (en) |
NL (1) | NL6608211A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2824818A1 (en) * | 1977-06-06 | 1978-12-07 | William James Dr King | ION BEAM SPUTTER IMPLANTING PROCEDURE |
EP0032788A1 (en) * | 1980-01-16 | 1981-07-29 | National Research Development Corporation | Method for depositing coatings in a glow discharge |
GB2199593A (en) * | 1986-12-09 | 1988-07-13 | Brian Langley Evans | Manufacturing multilayer optical/semiconductor devices by ion beam sputtering |
GB2213501A (en) * | 1987-12-11 | 1989-08-16 | Plessey Co Plc | Production of superconducting thin films by ion beam sputtering from a single ceramic target |
US4885070A (en) * | 1988-02-12 | 1989-12-05 | Leybold Aktiengesellschaft | Method and apparatus for the application of materials |
GB2399350A (en) * | 2003-03-11 | 2004-09-15 | Trikon Technologies Ltd | Forming tungsten or tungsten containing films using krypton or xenon as sputter gas; Tungsten/tungsten nitride stacks |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3625848A (en) * | 1968-12-26 | 1971-12-07 | Alvin A Snaper | Arc deposition process and apparatus |
US3904505A (en) * | 1970-03-20 | 1975-09-09 | Space Sciences Inc | Apparatus for film deposition |
US3929512A (en) * | 1970-12-09 | 1975-12-30 | Philips Corp | Semiconductor devices |
FR2129996B1 (en) * | 1971-03-25 | 1975-01-17 | Centre Nat Etd Spatiales | |
US3790411A (en) * | 1972-03-08 | 1974-02-05 | Bell Telephone Labor Inc | Method for doping semiconductor bodies by neutral particle implantation |
US4210701A (en) * | 1972-08-14 | 1980-07-01 | Precision Thin Film Corporation | Method and apparatus for depositing film on a substrate, and products produced thereby |
US4046712A (en) * | 1972-11-30 | 1977-09-06 | United Kingdom Atomic Energy Authority | Catalysts sputtered on substantially nonporous low surface area particulate supports |
US4059067A (en) * | 1974-10-09 | 1977-11-22 | Balzers Patent-Und Beteiligungs-Aktiengesellschaft | Apparatus for determining the rate of flow of particles in a vacuum deposition device |
US4001049A (en) * | 1975-06-11 | 1977-01-04 | International Business Machines Corporation | Method for improving dielectric breakdown strength of insulating-glassy-material layer of a device including ion implantation therein |
DE2529598C3 (en) * | 1975-07-02 | 1978-05-24 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Process for the production of a monolithically integrated semiconductor circuit with bipolar transistors |
US5054902B1 (en) * | 1975-12-29 | 1998-06-23 | William J King | Light control with color enhancement |
JPS5372A (en) * | 1976-06-24 | 1978-01-05 | Agency Of Ind Science & Technol | Selective doping crystal growing method |
US4278890A (en) * | 1977-07-01 | 1981-07-14 | The United States Of America As Represented By The United States Department Of Energy | Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering |
US4384911A (en) * | 1978-07-31 | 1983-05-24 | Precision Thin Film Corporation | Method for depositing hard film on a substrate |
JPS5930130B2 (en) * | 1979-09-20 | 1984-07-25 | 富士通株式会社 | Vapor phase growth method |
US4503125A (en) * | 1979-10-01 | 1985-03-05 | Xebec, Inc. | Protective overcoating for magnetic recording discs and method for forming the same |
FR2550681B1 (en) * | 1983-08-12 | 1985-12-06 | Centre Nat Rech Scient | ION SOURCE HAS AT LEAST TWO IONIZATION CHAMBERS, PARTICULARLY FOR THE FORMATION OF CHEMICALLY REACTIVE ION BEAMS |
US5387247A (en) * | 1983-10-25 | 1995-02-07 | Sorin Biomedia S.P.A. | Prosthetic device having a biocompatible carbon film thereon and a method of and apparatus for forming such device |
US4537791A (en) * | 1984-03-27 | 1985-08-27 | Cordis Corporation | Carbon coating of grafts or catheters |
US5082747A (en) * | 1985-11-12 | 1992-01-21 | Hedgcoth Virgle L | Magnetic recording disk and sputtering process and apparatus for producing same |
US5084151A (en) * | 1985-11-26 | 1992-01-28 | Sorin Biomedica S.P.A. | Method and apparatus for forming prosthetic device having a biocompatible carbon film thereon |
US4747922A (en) * | 1986-03-25 | 1988-05-31 | The United States Of America As Represented By The United States Department Of Energy | Confined ion beam sputtering device and method |
IT1196836B (en) * | 1986-12-12 | 1988-11-25 | Sorin Biomedica Spa | Polymeric or metal alloy prosthesis with biocompatible carbon coating |
US5133845A (en) * | 1986-12-12 | 1992-07-28 | Sorin Biomedica, S.P.A. | Method for making prosthesis of polymeric material coated with biocompatible carbon |
US4944754A (en) * | 1987-04-29 | 1990-07-31 | Vent-Plant Corporation | Method of manufacturing synthetic bone coated surgical implants |
DE3737142A1 (en) * | 1987-11-02 | 1989-05-11 | Christiansen Jens | GENERATION OF (THICK) LAYERS FROM HIGH-MELTING OR SUBLIMING MATERIAL (CONDUCTING, SEMICONDUCTING AND NON-CONDUCTING) AND MIXTURES OF THEM WITH PSEUDO RADIO EMISSIONS |
DE3880135T2 (en) * | 1988-09-08 | 1993-09-16 | Asahi Glass Co Ltd | SPRAYING METHOD BY MEANS OF A BAND-SHAPED PLASMA FLOW AND DEVICE FOR HANDLING THIS METHOD. |
JPH02163368A (en) * | 1988-12-15 | 1990-06-22 | Matsushita Electric Ind Co Ltd | Sputtering device |
CA2065581C (en) * | 1991-04-22 | 2002-03-12 | Andal Corp. | Plasma enhancement apparatus and method for physical vapor deposition |
SG2014011944A (en) | 2005-08-30 | 2014-08-28 | Advanced Tech Materials | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
US8968535B2 (en) * | 2009-12-14 | 2015-03-03 | Spp Process Technology Systems Uk Limited | Ion beam source |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE903017C (en) * | 1951-01-31 | 1954-02-01 | Sueddeutsche Lab G M B H | Manufacture of small balls from high-fusible materials |
-
1965
- 1965-06-16 US US464365A patent/US3472751A/en not_active Expired - Lifetime
-
1966
- 1966-06-14 DE DE19661521327 patent/DE1521327A1/en active Pending
- 1966-06-14 NL NL6608211A patent/NL6608211A/xx unknown
- 1966-06-15 GB GB26790/66A patent/GB1133936A/en not_active Expired
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2824818A1 (en) * | 1977-06-06 | 1978-12-07 | William James Dr King | ION BEAM SPUTTER IMPLANTING PROCEDURE |
EP0032788A1 (en) * | 1980-01-16 | 1981-07-29 | National Research Development Corporation | Method for depositing coatings in a glow discharge |
GB2199593A (en) * | 1986-12-09 | 1988-07-13 | Brian Langley Evans | Manufacturing multilayer optical/semiconductor devices by ion beam sputtering |
GB2199593B (en) * | 1986-12-09 | 1991-08-14 | Brian Langley Evans | Method and apparatus for fabrication of multilayered structures. |
GB2213501A (en) * | 1987-12-11 | 1989-08-16 | Plessey Co Plc | Production of superconducting thin films by ion beam sputtering from a single ceramic target |
US4885070A (en) * | 1988-02-12 | 1989-12-05 | Leybold Aktiengesellschaft | Method and apparatus for the application of materials |
GB2399350A (en) * | 2003-03-11 | 2004-09-15 | Trikon Technologies Ltd | Forming tungsten or tungsten containing films using krypton or xenon as sputter gas; Tungsten/tungsten nitride stacks |
GB2399350B (en) * | 2003-03-11 | 2006-06-21 | Trikon Technologies Ltd | Methods of forming tungsten or tungsten containing films |
Also Published As
Publication number | Publication date |
---|---|
US3472751A (en) | 1969-10-14 |
DE1521327A1 (en) | 1969-08-07 |
NL6608211A (en) | 1966-12-19 |
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