GB2399350B - Methods of forming tungsten or tungsten containing films - Google Patents
Methods of forming tungsten or tungsten containing filmsInfo
- Publication number
- GB2399350B GB2399350B GB0305544A GB0305544A GB2399350B GB 2399350 B GB2399350 B GB 2399350B GB 0305544 A GB0305544 A GB 0305544A GB 0305544 A GB0305544 A GB 0305544A GB 2399350 B GB2399350 B GB 2399350B
- Authority
- GB
- United Kingdom
- Prior art keywords
- tungsten
- methods
- containing films
- forming
- tungsten containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title 2
- 229910052721 tungsten Inorganic materials 0.000 title 2
- 239000010937 tungsten Substances 0.000 title 2
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0305544A GB2399350B (en) | 2003-03-11 | 2003-03-11 | Methods of forming tungsten or tungsten containing films |
DE102004010354A DE102004010354A1 (en) | 2003-03-11 | 2004-03-03 | Process for forming thin layers of tungsten or tungsten |
US10/796,274 US20040214417A1 (en) | 2003-03-11 | 2004-03-10 | Methods of forming tungsten or tungsten containing films |
JP2004067518A JP2004270035A (en) | 2003-03-11 | 2004-03-10 | Method for forming tungsten or tungsten-containing thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0305544A GB2399350B (en) | 2003-03-11 | 2003-03-11 | Methods of forming tungsten or tungsten containing films |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0305544D0 GB0305544D0 (en) | 2003-04-16 |
GB2399350A GB2399350A (en) | 2004-09-15 |
GB2399350B true GB2399350B (en) | 2006-06-21 |
Family
ID=9954543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0305544A Expired - Lifetime GB2399350B (en) | 2003-03-11 | 2003-03-11 | Methods of forming tungsten or tungsten containing films |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2004270035A (en) |
DE (1) | DE102004010354A1 (en) |
GB (1) | GB2399350B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090220777A1 (en) * | 2008-03-03 | 2009-09-03 | Martin Sporn | Sputter Deposition Method, Sputter Deposition System and Chip |
JP5666159B2 (en) * | 2010-03-31 | 2015-02-12 | 株式会社アルバック | Deposition method |
JP6082577B2 (en) * | 2012-11-29 | 2017-02-15 | 株式会社アルバック | Method for forming tungsten wiring layer |
WO2016191690A1 (en) * | 2015-05-27 | 2016-12-01 | Saint-Gobain Performance Plastics Corporation | Conductive thin film composite |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1133936A (en) * | 1965-06-16 | 1968-11-20 | Ion Physics Corp | Method and apparatus for forming tenacious deposits on a surface |
JPS5263226A (en) * | 1975-11-20 | 1977-05-25 | Nippon Tokushu Toryo Kk | Elastic sand coat-like top coating compound |
JPS63140509A (en) * | 1986-12-02 | 1988-06-13 | Tdk Corp | Manufacture of magnetically soft film |
US5082749A (en) * | 1990-03-15 | 1992-01-21 | E. I. Du Pont De Nemours And Company | Platinum or palladium/cobalt multilayer on a zinc oxide or indium oxide layer for magneto-optical recording |
EP0598422A1 (en) * | 1992-10-15 | 1994-05-25 | Koninklijke Philips Electronics N.V. | Method of forming a Ti and a TiN layer on a semiconductor body by a sputtering process, comprising an additional step of cleaning the target |
US5738917A (en) * | 1995-02-24 | 1998-04-14 | Advanced Micro Devices, Inc. | Process for in-situ deposition of a Ti/TiN/Ti aluminum underlayer |
JP2000080473A (en) * | 1998-06-26 | 2000-03-21 | Sanyo Electric Co Ltd | Carbon film and its formation |
US6200433B1 (en) * | 1999-11-01 | 2001-03-13 | Applied Materials, Inc. | IMP technology with heavy gas sputtering |
WO2001059849A1 (en) * | 2000-02-09 | 2001-08-16 | Matsushita Electric Industrial Co., Ltd. | THIN-FILM TRANSISTOR COMPRISING GATE ELECTRODE OF MoW ALLOY |
WO2001073153A1 (en) * | 2000-03-29 | 2001-10-04 | Trikon Holdings Limited | Method of depositing metal films |
US6402907B1 (en) * | 1999-11-04 | 2002-06-11 | Trikon Holdings Limited | Method of forming a barrier layer |
JP2002305163A (en) * | 2001-04-05 | 2002-10-18 | Ebara Corp | Composite cluster, manufacturing method therefor and manufacturing apparatus thereof |
GB2375117A (en) * | 2001-01-04 | 2002-11-06 | Trikon Holdings Ltd | Methods of sputtering using Krypton |
KR20030001744A (en) * | 2001-06-27 | 2003-01-08 | 주식회사 하이닉스반도체 | method for deposition of WNx film and W film |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2613646B2 (en) * | 1988-12-20 | 1997-05-28 | 大日本印刷株式会社 | Method of forming low stress metal thin film |
JPH05263226A (en) * | 1992-03-17 | 1993-10-12 | Fujitsu Ltd | Thin film forming method |
JP3488551B2 (en) * | 1994-09-29 | 2004-01-19 | 株式会社東芝 | Electrode wiring material and electrode wiring board using the same |
JP2000200763A (en) * | 1998-12-29 | 2000-07-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacture |
-
2003
- 2003-03-11 GB GB0305544A patent/GB2399350B/en not_active Expired - Lifetime
-
2004
- 2004-03-03 DE DE102004010354A patent/DE102004010354A1/en not_active Withdrawn
- 2004-03-10 JP JP2004067518A patent/JP2004270035A/en active Pending
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1133936A (en) * | 1965-06-16 | 1968-11-20 | Ion Physics Corp | Method and apparatus for forming tenacious deposits on a surface |
JPS5263226A (en) * | 1975-11-20 | 1977-05-25 | Nippon Tokushu Toryo Kk | Elastic sand coat-like top coating compound |
JPS63140509A (en) * | 1986-12-02 | 1988-06-13 | Tdk Corp | Manufacture of magnetically soft film |
US5082749A (en) * | 1990-03-15 | 1992-01-21 | E. I. Du Pont De Nemours And Company | Platinum or palladium/cobalt multilayer on a zinc oxide or indium oxide layer for magneto-optical recording |
EP0598422A1 (en) * | 1992-10-15 | 1994-05-25 | Koninklijke Philips Electronics N.V. | Method of forming a Ti and a TiN layer on a semiconductor body by a sputtering process, comprising an additional step of cleaning the target |
US5738917A (en) * | 1995-02-24 | 1998-04-14 | Advanced Micro Devices, Inc. | Process for in-situ deposition of a Ti/TiN/Ti aluminum underlayer |
JP2000080473A (en) * | 1998-06-26 | 2000-03-21 | Sanyo Electric Co Ltd | Carbon film and its formation |
US6200433B1 (en) * | 1999-11-01 | 2001-03-13 | Applied Materials, Inc. | IMP technology with heavy gas sputtering |
US6402907B1 (en) * | 1999-11-04 | 2002-06-11 | Trikon Holdings Limited | Method of forming a barrier layer |
WO2001059849A1 (en) * | 2000-02-09 | 2001-08-16 | Matsushita Electric Industrial Co., Ltd. | THIN-FILM TRANSISTOR COMPRISING GATE ELECTRODE OF MoW ALLOY |
WO2001073153A1 (en) * | 2000-03-29 | 2001-10-04 | Trikon Holdings Limited | Method of depositing metal films |
GB2375117A (en) * | 2001-01-04 | 2002-11-06 | Trikon Holdings Ltd | Methods of sputtering using Krypton |
JP2002305163A (en) * | 2001-04-05 | 2002-10-18 | Ebara Corp | Composite cluster, manufacturing method therefor and manufacturing apparatus thereof |
KR20030001744A (en) * | 2001-06-27 | 2003-01-08 | 주식회사 하이닉스반도체 | method for deposition of WNx film and W film |
Also Published As
Publication number | Publication date |
---|---|
GB0305544D0 (en) | 2003-04-16 |
GB2399350A (en) | 2004-09-15 |
JP2004270035A (en) | 2004-09-30 |
DE102004010354A1 (en) | 2004-09-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB0325192D0 (en) | Method of use | |
TWI365887B (en) | Process for the preparation of polycarbonates | |
AU158373S (en) | Set of containers | |
IL173456A0 (en) | Process for the preparation of 4-amino-3-quinolinecarbonitriles | |
HK1079771A1 (en) | Process for the manufacture of valsartan | |
AU2003234110A1 (en) | Hydrate Inhibiting Well Fluids | |
IL175743A0 (en) | Process for the preparation of thiazolopyrimidines | |
EP1595850A4 (en) | Method of desalting | |
IL174070A0 (en) | Method for the manufacture of thip | |
PL1633792T3 (en) | Porous films | |
GB2399350B (en) | Methods of forming tungsten or tungsten containing films | |
EP1646640A4 (en) | Method for the preparation of highly pure 1-androstene derivatives | |
GB2404786B (en) | Etching films | |
GB0304555D0 (en) | Compounds and methods of manufacture | |
HK1095145A1 (en) | Process for the preparation of n-arylmorpholinones n- | |
AU2004225794A8 (en) | Process for the electrolysis of aluminiumsulfide | |
EG24122A (en) | Process for the synthesis of 3-cyano-6-alkoxy-7-nitro-4-quinolines | |
GB0313668D0 (en) | Method of containing peas | |
EP1437347A3 (en) | Process for the preparation of arylvinyl halides and aralkinyl compounds | |
AU2003290512A1 (en) | Method of weldbonding | |
GB0328067D0 (en) | Bath-water-temperature-sensing alarm | |
HK1087111A1 (en) | Process for the preparation of nicotinaldehydes | |
GB0322685D0 (en) | Method of position determination | |
HUP0300255A3 (en) | Process for the preparation of 2-phenyl-4-methyl-1-tosil-piperazine | |
AU2003906164A0 (en) | Methods for the Synthesis of Polydeoxynucleotides |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |
Free format text: REGISTERED BETWEEN 20150716 AND 20150722 |
|
PE20 | Patent expired after termination of 20 years |
Expiry date: 20230310 |