JP3488551B2 - Electrode wiring material and electrode wiring board using the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode wiring material and an electrode wiring board using the same.

[0002]

2. Description of the Related Art Recently, an active matrix type in which a thin film transistor (hereinafter abbreviated as TFT) formed by using an amorphous silicon (hereinafter abbreviated as a-Si) film is configured as a switching element. Liquid crystal display devices are expected to realize large-area, high-definition, high-quality and inexpensive panel displays.

In the case of constructing a large-area panel display, the total length of the address wiring inevitably increases dramatically, so that the resistance of the address wiring increases and the address wiring of the gate pulse applied to the switching element. There is a problem in that the delay due to the resistance component becomes remarkable and the liquid crystal cannot be controlled normally. Therefore, it is necessary to use a material having a sufficiently low resistivity as the wiring material such as the address wiring. At present, aluminum (Al) is used as a material for such low resistance wiring and electrodes.

However, when Al is used as the electrode wiring material, hillocks and round bulges may occur in the formed electrodes and wirings. In addition, Al has a drawback that it has poor corrosion resistance. Therefore, Al having the above problems
Even if an electrode wiring board in which various elements are formed by using is used as an electrode wiring material, a highly reliable element cannot be obtained. Thus, Al is a material that gives various restrictions in the process of forming electrodes and wirings, and is not a preferable electrode wiring material.

The present invention has been made in view of the above points, and provides an electrode wiring material having a sufficiently low resistivity and easy to handle, and reliability using this electrode wiring material. It is an object of the present invention to provide a high electrode wiring board.

[0006]

The first invention of the present invention is as follows:
MoW containing W in a concentration of 10 atom% to 90 atom%.
Alloy as the main component, 0.0003 atom% to 3 atom%
An electrode wiring material characterized by containing Kr is provided.

[0007]

A second invention of the present invention is an electrode wiring board comprising electrode wiring formed on a glass substrate, wherein the electrode wiring is made of the electrode wiring material according to the first invention. An electrode wiring board having the following features is provided.

[0009]

In the first invention, the preferable amount of Kr added to the main component metal is 0.0003 atom% to 1 atom%, and the particularly preferable amount of Kr is 0.000.
It is 3 atomic% to 0.5 atomic%.

In the second invention, it is preferable that the electrode wiring is formed by a sputtering method. As a result, a film having high adhesiveness can be formed on a large-area substrate.

In the first and second aspects of the invention, it is preferable that Ti is added to the main component. This allows
It is possible to improve the adhesive force and the acid resistance. In the first and second inventions, the W or Mo content is preferably 10 atom% to 95 atom%. This is because the W or Mo content is 10 atomic% to 9%.
This is because if it is within the range of 5 atomic%, the margin of the sputtering conditions for obtaining a film having a low resistivity becomes wide. Examples of the electrode wiring board of the present invention include a substrate on which a liquid crystal display device or a semiconductor device is formed.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION Unlike the conventional electrode wiring materials such as W and Mo, the electrode wiring material according to the present invention and the reference example contains Ar, Xe or Kr in a predetermined content in the material. It is characterized by that. This makes it possible to exhibit a sufficiently low resistivity and to secure excellent corrosion resistance as compared with Al or the like.

The electrode wiring can be formed by using such an electrode wiring material by, for example, forming a film by sputtering in a gas atmosphere of Ar, Kr, Xe or the like. In this case, it is necessary to adjust various film forming conditions such as power and pressure of the sputtering device.

Among them, Kr and Xe have a sufficiently large atomic weight as compared with Ar, and can provide high energy during film formation. Therefore, a film having a good crystal structure can be formed and the resistivity can be reduced. As described above, since a film having a good crystal structure can be formed, the lattice constant of the material forming the film can be set to be substantially equal to the lattice constant of the material in the bulk state. Here, that the lattice constants are substantially equal means that the ratio of the lattice constant of the material forming the film to the lattice constant of the material in the bulk state is within ± 3%, preferably within ± 1%.

When forming an electrode wiring using the electrode wiring material of the present invention, an alloy of Mo and W is formed. By thus alloying, it is possible to achieve more reduction in the resistance of the electrode wiring.

Next, the present invention will be described in detail based on the experimental results by the present inventors. First, Kr and X in the electrode film
The relationship between the contents of e and Ar and the influence on the electrode film will be described.

Using a single wafer type load lock type sputtering apparatus, the substrate temperature before film formation was set to 200 ° C., the film formation power was set to 10 kW, and the distance between electrodes was set to 5 cm.
In a gas pressure of 0.9 Pa, MoW containing 65 atomic% of Mo is deposited on a glass substrate to form a film having a thickness of 300.
nm MoW alloy film (Sample 1) was formed. The Ar content in the film of Sample 1 was measured by the fluorescent X-ray device RIX-10.
It was 0.3 atom% when measured by 00 (made by Rigaku Denki Kogyo Co., Ltd.). The resistivity of this sample 1 was measured and found to be 17 μΩ · cm.

Further, a single-wafer load-lock type sputtering apparatus was used, the substrate temperature before film formation was set to 200 ° C., the film formation power was set to 10 kW, the distance between the electrodes was set to 5 cm, and the Kr gas pressure was 0.6 Pa. In the atmosphere, MoW containing 65 atomic% of Mo was deposited on the glass substrate to form a MoW alloy film (Sample 2) having a film thickness of 300 nm. The Kr content in the film of Sample 2 was measured by the fluorescent X-ray apparatus SY.
It was 0.0003 atom% or less as measured by STEM3271 (trade name, manufactured by Rigaku Denki Kogyo KK). Moreover, when the resistivity of this sample 2 was measured, it was 12 μΩ · c.
It was m.

Further, using a sputtering apparatus with many oblique incident components, the substrate temperature before film formation was set to 30 ° C., the film formation power was set to 1 kW, and the distance between the electrodes was set to 10 cm.
In a gas pressure of 0.5 Pa, MoW containing 65 atomic% of Mo is deposited on a glass substrate to form a film having a thickness of 300.
nm MoW alloy film (Sample 3) was formed. The Ar content in the film of Sample 3 was about 20 atomic%. Also, when the resistivity of this sample 3 was measured, it was 50 μΩ · c
It was m.

A single-wafer load-lock type sputtering apparatus was used, the substrate temperature before film formation was set to 200 ° C., the film formation power was set to 10 kW, and the electrode distance was set to 5 cm, and the Ar gas pressure was 0.9 Pa. In the atmosphere of, MoW containing 30 atomic% of Mo was deposited on the glass substrate to form a MoW alloy film (Sample 4) having a film thickness of 300 nm. The Ar content in the film of Sample 4 was 3 atomic%. Moreover, when the resistivity of this sample 4 was measured, it was 25 μm.
It was Ω · cm.

Further, a single-wafer load-lock type sputtering apparatus was used, the substrate temperature before film formation was set to 200 ° C., the film formation power was set to 10 kW, and the electrode distance was set to 5 cm, and the Kr gas pressure was 0.6 Pa. In the atmosphere described above, MoW containing 30 atomic% of Mo was deposited on the glass substrate to form a MoW alloy film (Sample 5) having a film thickness of 300 nm. The Kr content in the film of Sample 5 was 0.001 atomic%
Met. The resistivity of this sample 5 was measured and found to be 13 μΩ · cm.

Further, as a result of the research conducted by the present inventors, it has been found that when the Ar content in the film exceeds 5 atomic%, the resistivity rapidly increases. This tendency is due to Xe or Kr
Is almost the same, and when the content of Xe or Kr in the film exceeds 3 atomic%, the resistivity sharply increases.
Further, the content of Mo or W in the film is 10 atoms 5 to 9
When it was out of the range of 5 atom%, the resistivity increased similarly to the above.

As described above, when considering the resistivity, the amount of Ar added in the material is 5 atomic% or less, the amount of Kr added is 3 atomic% or less, and the amount of Xe added is 3 atomic% or less. I found it desirable. On the other hand, when the addition amount of Ar, Kr, and Xe is less than 0.0003 atom%, it is necessary to reduce the film formation power during film formation and sufficiently slow the sputtering rate. Further, it is necessary to recrystallize the film constituent material after forming the film. Therefore, it was also found that when the added amount of Ar, Kr and Xe is less than 0.0003 atom%, it is completely unsuitable industrially.

Further, the inventors of the present invention deposited MoW containing 65 atomic% of Mo on a glass substrate by using the above-mentioned single-wafer load-lock type sputtering apparatus to form a film having a thickness of 3
A MoW alloy film having a thickness of 00 nm was formed by changing the film forming conditions to obtain MoW alloy films having different Ar contents. As a result, for example, a MoW alloy film having a high Ar content can be obtained by increasing the film forming power, and a MoW alloy film having a high Ar content can be obtained by decreasing the film forming pressure. it can.

FIG. 1 is a characteristic diagram showing the relationship between stress, resistivity, film peeling rate, and Ar content in the film. In terms of stress and resistivity, the Ar content is 0.0
It can be seen that excellent properties are exhibited within the range of 003 at% to 5 at%. Also, regarding the film peeling rate,
The Ar content tends to increase in a region of less than 0.4 atomic%. Therefore, it is preferable to set the content of Ar in the range of 0.4 atom% to 5 atom% particularly in the application where importance is attached to the adhesion of the film.

Further, the present inventors deposited MoW containing 65 atomic% of Mo on a glass substrate by using the above-mentioned single-wafer type load-lock type sputtering apparatus to form a film having a thickness of 4
A MoW alloy film having a thickness of 00 nm was formed by changing the film forming conditions to obtain MoW alloy films having different Kr contents in the film.

FIG. 2 is a characteristic diagram showing the relationship between the stress, the resistivity, the film peeling rate, and the Kr content in the film. K, in terms of stress, resistivity, and film peeling rate
It can be seen that when the content of r is in the range of 0.0003 atom% to 3 atom%, excellent properties are exhibited. In addition, when a MoW alloy film containing Kr is formed by using a different sputtering apparatus, the stress varies with the increase of the Kr content, not simply decreases, so that it is found that the stress has a strong device dependence. It was

From the above, in the electrode wiring materials of the present invention and the reference example , 0.0003 atomic% to 5 atomic% Ar, 0.0003 atomic% to 3 atomic% Kr and 0.
It is set so as to contain an additive element selected from the group consisting of 0003 atom to 3 atom% of Xe. These additional elements are
The metal as the main component of the electrode wiring material may be mixed alone or may be mixed and mixed. When the additive elements are mixed and mixed, the characteristics of the film are characteristics in which changes in the characteristics of the film due to the addition of the individual additive elements are added.

Next, the dependency of the resistivity on the film forming gas and the composition will be described with reference to FIG. FIG. 3 is a characteristic diagram showing the relationship between the resistivity and the Mo content. For the sample, a small single-wafer load-lock type sputtering device was used, the substrate temperature before film formation was set to 150 ° C., the film formation power was set to 2 kW, and the distance between electrodes was set to 5.5 cm.
It was deposited on a glass substrate with a film thickness of 300 nm in an atmosphere of r, Kr, and Xe at a gas pressure of 0.5 Pa. The contents of Ar, Kr, and Xe in each film were within the ranges of the present invention and the reference example .

As can be seen from FIG. 3, the higher the Mo content, the more the resistivity can be reduced. In particular,
When forming a film in an Ar atmosphere, it is possible to reduce the resistivity by using a Mo single phase. Also, X
In film formation in an e or Kr atmosphere, Mo is 90
It was possible to obtain low resistivity in the range of at most 80 atomic%, and good results were obtained. It is also understood that it is preferable to form a film in a Xe or Kr atmosphere, particularly in a Kr atmosphere, rather than in an Ar atmosphere.

FIG. 4 is a characteristic diagram showing the relationship between the lattice constant measured by X-ray and the Mo content. As can be seen from FIG. 4, by forming a film in a Xe or Kr atmosphere, particularly a Kr atmosphere, rather than an Ar atmosphere,
The lattice constant becomes closer to the lattice constant in the bulk state, and the crystallinity becomes good. It is considered that this is because Kr and Xe have a sufficiently large atomic weight as compared with Ar and can give high energy during film formation. As a result, low resistance is achieved. In fact, the film having a difference from the lattice constant in the bulk state within 1.03 times, preferably within 1.01 times had a low resistivity.

Next, the dependence of the film forming conditions on the film characteristics will be described with reference to FIGS. FIG. 5 is a characteristic diagram showing the relationship between the resistivity and the film forming power, and shows the film forming power dependency of the resistivity in an atmosphere with a gas pressure of 0.9 Pa. FIG. 6 is a characteristic diagram showing the relationship between the resistivity and the gas pressure, and shows the gas pressure dependency of the resistivity at a film forming power of 10 kW. The samples in FIG. 5 and FIG. 6 use the above-mentioned single-wafer load-lock type sputtering apparatus, the substrate temperature before film formation is set to 200 ° C., the distance between electrodes is set to 5 cm, and Ar and Kr are respectively set. In the atmosphere, 65 atomic% of Mo was formed on the glass substrate.
And a MoW alloy film containing Al is formed to a thickness of 400 nm.

FIG. 7 is a characteristic diagram showing the relationship between the resistivity and the film forming power, showing the dependency of the resistivity on the film forming power at a gas pressure of 0.75 Pa. FIG. 8 shows the resistivity and the gas. It is a characteristic view showing the relationship with the pressure, showing the gas pressure dependence of the resistivity at a film forming power of 2 kW. For the samples in FIGS. 7 and 8, a small single-wafer sputtering apparatus different from the above is used and the substrate temperature before film formation is 150 ° C.
The distance between the electrodes was set to 5.5 cm, and the distance between the electrodes was set to 6 cm on the glass substrate in the atmosphere of Ar and Kr.
A MoW alloy film containing 5 atomic% of Mo is formed with a film thickness of 300 nm.

As can be seen from the above experimental results, Ar
For film formation in an atmosphere, the film formation power is relatively small,
In addition, low resistance is achieved by setting the gas pressure high. In addition, film formation in a Kr or Xe atmosphere has device dependence, and there are optimum conditions for minimizing the resistivity.

Further, when the relationship between the film thickness and the resistivity was examined, the resistivity was slightly high up to the film thickness of 30 nm, but when the film thickness exceeds 30 nm, the film quality is stable and shows a constant resistivity. I understood.

Embodiments of the present invention will be specifically described below with reference to the drawings. (Example 1) FIG. 10 is a plan view showing a drive circuit board (electrode wiring board) of a liquid crystal display device using the electrode wiring material of the present invention. 9 is a sectional view taken along line IX-IX in FIG. In FIG. 10, only electrode wiring and pads as electrodes are shown. Also, here, the TF used
The configuration of the T and the storage capacity portion and the process thereof will be mainly described.

First, reference numerals 10 ₁ and 10 _{2 in} FIG. 9 denote glass substrates. On this glass substrate 10 ₁ is lower black matrix 18 is formed, on the black matrix 18 is formed an insulating film 19. Insulating film 19
A Mo—W alloy gate electrode 1 extending from the address wiring (which is integrally formed with the gate electrode) is formed on the upper portion. A semiconductor layer 4 and a stopper insulating film 5 are formed on the gate electrode 1 with an insulating film 7 interposed therebetween, and are patterned.

The gate electrode 1 is formed as follows. First, the glass substrate 10 ₁ is placed in a single-wafer load-lock type sputtering apparatus, the substrate temperature before film formation is 150 ° C., the film formation power is 10 kW, and the distance between electrodes is 5 cm.
Respectively, and sputtering is performed using a MoW alloy target in an atmosphere of a Kr gas pressure of 0.5 Pa, and MoW containing 65 atomic% of Mo is added to the glass substrate 10.
A MoW alloy film having a thickness of 300 nm was formed by depositing on top of ₁ . The content of Kr in this film is 0.001 atomic%
And the lattice constant was 3.15 angstrom, which is almost the same as the bulk state. The resistivity of this MoW alloy film was 13 μΩ · cm, which was sufficiently low.

Next, this MoW alloy film is subjected to CF ₄ and O ₂
Tapering etching was performed using a mixed gas of and to form the gate electrode 1 having a taper angle of 35 °. The taper angle of the gate electrode is 20 to 60 °, preferably, in order to improve the coverage with the gate insulating film.
It is preferably in the range of 25 to 50 °.

Next, on this gate electrode, an insulating film 7 made of a laminated body of SiO ₂ and SiNx, and a-Si: H.
A semiconductor layer 4 made of, for example, and a stopper insulating film 5 made of SiNx are formed and patterned.

Further, in the above structure, Al or Mo is used.
A drain electrode 3a and a source electrode 3b made of a -W alloy are formed. Reference numerals 30a and 30b in FIG. 6 denote source / drain regions composed of n-type amorphous silicon. The TFT 17 is configured in this way, and the pixel electrode 6 is connected to the source electrode 3b of the TFT 17. In this way, the liquid crystal drive circuit board 21 is configured. The material of the pixel electrode 6 is ITO.
A transparent conductive material such as SnO ₂ or SnO ₂ can be used.

The counter electrode 20 form a black matrix 9 consisting of a color filter 8 and Mo-W alloy on the glass substrate 10 ₂ is constructed by forming a counter electrode 11 made of ITO thereon. The liquid crystal drive circuit board 21 and the counter substrate 20 are opposed to each other as shown in FIG. 9, and the liquid crystal material 16 is sandwiched between them to form a liquid crystal display device.

[0044] In addition, on the glass substrate 10 _1, M to one end
A plurality of address wirings 1 having address electrode pads 13 made of an o-W alloy, and a plurality of these address wirings 1
And a plurality of data wirings 2 each having a data electrode pad 16 made of Mo—W alloy are formed at one end thereof. An insulating film is provided between the address wiring 1 and the data wiring 2 at the intersection of the address wiring 1 and the data wiring 2. At this intersection, a TFT 17 is formed as a switching element so as to be adjacent to it, and a source electrode 3b, which is one of the electrodes, has a pixel formed in a pixel region surrounded by the address wiring 1 and the data wiring 2. The electrode 6 is connected. Further, the area of the address electrode pad 13 has an area including the address electrode 15 and the contact hole 14.

The liquid crystal display device having the above structure has various effects as follows. That is, in the liquid crystal display device using the TFT, the wiring resistance needs to be low as the screen becomes large and the resolution becomes high. For example, in a display for a personal computer (VGA), the wiring is 480 × (640 × 3), and in a display for an advanced personal computer (XGA), the wiring is 760 × (1).
024 × 3). In this case, the wiring resistance needs to be low in order to prevent the delay of the gate pulse.
The pulse delay is the wiring resistance R and the TFT added to the wiring.
Or the product of the storage capacity and the capacity C, CR. When the screen becomes large, the wiring becomes long, so that R inevitably increases and CR increases. Also, when the number of pixels increases, C
(C = C ₀ X _n , C ₀ : capacity of unit pixel, n: number of pixels)
And CR increases. Since C is determined by the pixel, it is necessary to reduce R in order to prevent pulse delay.

In the normal manufacturing method, VGA is 4 in a normal design with a screen size of 10 inch diagonal or more.
0 μΩ · cm, SVGA is 2540 μΩ · cm or less, X
GA requires a resistivity of 20 μΩ · cm or less. Therefore, the VGA wiring material has a resistivity of 40 μΩ · cm.
Although normal Mo-Ta and Cr can be used to some extent, XGA cannot use Mo-Ta and Cr. However, in this embodiment, the resistivity is 20 μm.
Since Kr-containing low-resistance Mo-W having Ω · cm or less is used, it is possible to provide such a high-definition liquid crystal display device of the VGA and XGA standards.

Further, in this embodiment, the address line formed by using the Mo--W alloy can be subjected to taper processing by CDE (Chemical Dry Etching) using a mixed gas of CF ₄ and O _2. I understood. Furthermore, an alkaline etchant (pH of an oxidant containing an oxidizing agent having a redox potential higher than Mo and W and lower than Ti) is used.
It was found that the wet etching using 7 to 13) can perform taper processing without deteriorating the resist.

Therefore, according to this embodiment, Mo-W
Since the alloy has a low resistivity, the address wiring formed by using this material exhibits a low resistance, and therefore the delay of the gate pulse due to this wiring resistance does not occur, and the gate having no delay in the predetermined switching element is generated. A pulse can be given.

Further, since the Mo-W alloy film can be taper processed, the step coverage of the interlayer insulating film formed on the address wiring formed by using this material is improved, and a high withstand voltage can be secured. Although it is desirable to provide an undercoat layer of SiO ₂ in order to facilitate the taper etching, the undercoat layer can be made unnecessary by selecting the etching conditions.

Therefore, it is possible to realize a reliable liquid crystal display device even when the display area is enlarged. Further, even if the display is not a large area, if the resistivity of the address wiring becomes low, the wiring width can be made thin, which has an advantage that the aperture ratio can be increased.

Further, in the liquid crystal display device having the above structure, the address electrode pad 13 and the data electrode pad 1
Since 6 is also formed of the same Mo-W alloy as the above-mentioned gate electrode, for example, COG (Chip On Glass)
At the time of mounting, the bonding force between those electrode pads and the image signal ICs connected thereto is improved, and high reliability is obtained.

Furthermore, since the Mo-W alloy has a low reflectance, by using the Mo-W alloy as the black matrix material, the reflection of light from the outside on the image display surface is reduced, and a high quality display quality is obtained. Can be realized.

Further, as shown in FIG. 11, the chemical resistance of the Mo-W alloy is very excellent with the W content of 20% to 95%, preferably 25% to 90%, and the chemical resistance of the pixel electrode material is high. Etching rate for ITO etchant is 10n
m / min or less, no etching is performed on BHF which is an etchant for the interlayer insulating film, and an etching rate is 30 to 400 for Al etchant.
It was below nm / min. In particular, it was found that when W was 50% or more, each etchant was not attacked at all. Therefore, when using Mo-W alloys as various wiring materials, fine processing becomes possible, and a display for a personal computer (VGA) (wiring of 480 x
(640 x 3)), display for advanced personal computer (X
It is possible to provide a high-definition liquid crystal display device such as GA (wiring is 760 × (1024 × 3)).

Further, Ar0.
According to the investigation of the present inventors regarding the etching characteristics of Mo-Ti containing 3 atom%, as shown in FIG. 12, an Mo-W alloy for the ITO etchant used for forming the pixel electrode 6 and BHF used for forming the contact hole is obtained. It was found that the chemical resistance of No. 1 was very excellent when the Ti content was 20 to 80%. Moreover, a weak alkaline etchant (pH 7 to 7) containing an oxidizing agent having a redox potential higher than that of Ti is used.
It was found that by using 9), it is possible to etch without dissolving the resist. Also, WT
It was found that even i showed excellent acid resistance. Also, Ti
In addition, even if Ta, Nb, Cr, Zr, and Hf are added in an amount of about 5 atomic%, almost the same tendency is exhibited, and particularly those containing a predetermined amount of Xe and Kr show various excellent characteristics. It was confirmed to show.

In this embodiment, the temperature is from room temperature to 300 ° C., the power is 3 to 20 kW for the large device, 1 to 4 kW for the small device, the pressure is 0.3 to 1.2 Pa, and the distance between the electrodes is 4 to 4. It was found that film characteristics of 10 cm were sufficiently good.

In the wiring of this embodiment, in order to improve the adhesion with the base (substrate), Mo containing Ar is used.
It is preferable to stack a film made of a nitride of a -W alloy and a film made of a Mo-W alloy. Among the Mo-W alloys, especially for the film made of W content of 50 atomic% or less,
It was found that the resistivity increases by one digit or more when annealed in air. This is due to the extreme oxidation of the surface. In this case, it was found that, by stacking a film made of a nitride of Mo-W alloy on it, oxidation was prevented and resistance did not increase. That is, Mo containing Ar
The -W alloy after forming by sputtering, N content sputtered nitrides 50 atomic% or less of Mo-W alloy, by plasma processing a mixed gas of CF ₄ + O _2, hard to be oxidized and low Resistive wiring can be formed. In this case, it can be formed by the same process as the formation of the Mo-W alloy film. In this case, the resistance value sharply increases when nitrogen (N) is contained in an amount of more than 50 atomic%, so that the content of N needs to be suppressed to 50 atomic% or less. Reference Example In the following reference example , the same parts as in Example 1 are designated by the same reference numerals, and detailed description thereof will be omitted for simplification.

In this reference example , different points from the first embodiment are the liquid crystal drive circuit board and the wiring material. Figure 13 is San
Examples of the liquid crystal drive circuit board of a liquid crystal display device using an electrode wiring material according to the considered example is a sectional view showing a. This liquid crystal drive circuit board will be described with a focus on the configuration and process of the TFT and the storage capacitor portion. On the glass substrate 10 ₁ is formed with a polycrystalline Si film 104 with a thickness of 100nm, a gate oxide film 107 having a thickness of 100nm is formed on its
₃ is formed. Furthermore, Ar.
Gate electrode 1 made of Mo-Ti alloy containing 1 atomic%
02 is formed. This Mo-Ti alloy contains 1
It contains 0 atom%.

The gate electrode 102 is formed as follows. First, the glass substrate 10 ₁ is placed in a small single-wafer load-lock type sputtering apparatus, the substrate temperature before film formation is 150 ° C., the film formation power is 2 kW, and the distance between electrodes is 5.5 cm. Set, Ar gas pressure 0.6Pa
Sputtered using a MoTi alloy target in the atmosphere of MoTi containing 10 atomic% Ti
Thickness 300nm in an alloy is deposited on a glass substrate 10 ₁
MoTi alloy film was formed. The Ar content in this film was 0.1 atomic%, and the lattice constant was 3.14 angstrom, which is almost the same as in the bulk state. This Mo
The Ti alloy film had a sufficiently low resistivity of 25 μΩ · cm.

In the above structure, the source / drain portion n ⁺
The polycrystalline Si layers 103a and 103b are formed, and the island-shaped polycrystalline Si active layer 104 is formed. This is because the gate electrode 102 is used as a mask and the dose of phosphorus is 1 × 10 ^16.
It can be produced by implanting at cm ⁻³ . Further, an interlayer insulating film 107 ₁ having a thickness of 300 nm is formed thereon by thermal CVD.

In the pixel region, a pixel electrode 206 is formed by sputtering ITO with a thickness of 100 nm and patterning it. Further, a contact hole is formed in the interlayer insulating film (SiOx) 107 ₁ of the contact portion and the gate portion by etching with diluted HF, and a contact hole is formed thereon by sputtering.
Depositing a Mo-W alloy containing r
By forming and patterning a -W alloy film, the signal line, the source electrode (first main electrode) 106a, and the drain electrode (second main electrode) 106b are formed. Here, the Mo-W alloy contains 60 atomic% of W.

The signal line and the like are formed as follows.
First, the glass substrate 10 ₁ is placed in a small single-wafer load-lock type sputtering apparatus, the substrate temperature before film formation is 150 ° C., the film formation power is 3 kW, and the distance between electrodes is 5 cm.
Respectively, and sputtering is performed using an Mo-W alloy target in an atmosphere of Ar gas pressure of 0.8 Pa, and Mo-containing 300 nm thick containing 60 atomic% W-.
A W alloy film was formed. The Ar content in this film is 2
Atomic%, and the lattice constant is almost equal to that in the bulk state.3.
It was 16 angstroms. The resistivity of this Mo—W alloy film was 13 μΩ · cm, which was sufficiently low.

A SiNx film is formed on the TFT region by plasma CVD, and the pixel and peripheral circuit connecting portion is RI.
By etching with E, passivation Si
The Nx film 107 ₂ is formed. In this way, the liquid crystal drive circuit board 110 is configured.

The liquid crystal drive circuit board 110 having the above structure
A liquid crystal display device was manufactured in the same manner as in Example 1 using
When the same evaluation as in Example 1 was performed, the liquid crystal display device exhibited the same effect as in Example 1. Furthermore, the following effects were obtained. That is, since Al is conventionally used as the signal line metal, it is necessary to provide a barrier metal of a refractory metal such as Mo between ITO and n ⁺ polycrystal Si. Is M
By using the o-W alloy, the barrier metal became unnecessary, and the process could be reduced. Example 2 This example differs from Example 1 in the wiring material including the liquid crystal drive circuit board and the gate electrode. 14
FIG. 6 is a cross-sectional view showing another example of a liquid crystal drive circuit board of a liquid crystal display device using the electrode wiring material of the present invention. This liquid crystal drive circuit board uses a TFT having a structure formed by etching n ⁺ amorphous silicon on the channel. Further, the storage capacitance portion is formed by the wiring in the same layer as the gate electrode and the data wiring. This liquid crystal drive circuit board is manufactured as follows.

First, the gate electrode 112 ₁ was formed on the glass substrate 10 ₁ using the wiring metal Mo-W used in the first embodiment.
And Cs wiring 112 ₂ are integrally formed at the same time. Mo-W
The film formation is performed in the same manner as in Example 1. Next, the interlayer insulating film 117 ₃ , the amorphous Si active layer 114, and the n ⁺ amorphous Si layers 115a and 115b are sequentially formed and patterned. Next, the source electrode 116a and the drain electrode 116b are simultaneously formed from the wiring metal. Then, an oxide film 117 ₁ is formed thereon, a contact hole is formed on the drain electrode 116b, and a pixel electrode 216 is further formed in the pixel region. The pixel electrode 216 and Cs
A storage capacitor is formed between the wiring 112 ₂ .

The liquid crystal drive circuit board 110 having the above structure
A liquid crystal display device was manufactured in the same manner as in Example 1 using
When the same evaluation as in Example 1 was performed, the liquid crystal display device exhibited the same effect as in Example 1. Furthermore, the following effects were obtained. That is, in the manufacturing process, CDE
Since ITO can provide good contact due to the low resistance of the oxide films of Mo and W, no barrier metal was required.

Here, the above-mentioned Examples 1 and 2 and Reference
In the considered example , each component is not limited to the content of each example . For example, as a semiconductor material, polycrystalline S
Not limited to i and amorphous Si, microcrystalline Si in the middle may be used. Alternatively, a compound semiconductor such as CdSe or SiGe may be used. Further, the insulating film formed on the data line is not limited to the oxide film, and a nitride film or an oxynitride film may be used. Further, the switching element is not limited to the transistor, and an MIM or a diode can be used instead of the transistor of the first embodiment. Further, the electrode wiring material of the present invention can be applied to the electrode wiring of a simple matrix liquid crystal display device.

Further, the alloys used in the above embodiments may be used as a single layer as in each embodiment, and for preventing a layered film of two or more layers of alloys having different compositions, for example, surface oxidation. Alternatively, a laminated film in which a film made of an alloy containing Mo and W as main components and containing nitrogen is formed on a film made of a Mo—W alloy may be used.

Further, Ta, Ta-N, Ta-Mo, Ta-Nb, Ta- is formed on the surface of the Mo-W alloy film described in the above embodiment, that is, on the upper layer of the Mo-W alloy film.
A metal such as W, Ta-Nb-N, Ta-Mo-N, Ta-W-N alloy or these alloys may be laminated to improve the acid resistance. Further, a film made of Al, Cu, Au or the like may be provided under the Mo-W alloy film to further reduce the resistance.

Further, the present invention is not limited to the above-mentioned respective embodiments, and various modifications can be carried out without departing from the scope of the invention. ( Embodiment 3 ) FIG. 15 shows a case where a MoW alloy film containing 0.2 atomic% of Ar and Kr is applied to a MOS transistor of DRAM.

The specific structure of this DRAM is as follows. In the figure, reference numeral 41 denotes a Si single crystal substrate. Single crystal substrate 4
1 includes n ⁺ regions 45a and 45b which are impurity diffusion regions.
Are formed. LOCOS is formed on the single crystal substrate 41.
A silicon oxide film 47 ₃ is formed. Also, LOC
A gate electrode 42 made of a MoW alloy is formed on the OS silicon oxide film 47 ₃ .

This MoW alloy film is formed as follows. First, the single crystal substrate 41 is placed in a small single-wafer load-lock type sputtering apparatus, the substrate temperature before film formation is 150 ° C., the film formation power is 2 kW, and the distance between electrodes is 5.
5 cm, Ar gas pressure 0.3 Pa, Kr
Sputtering was performed using a MoW alloy target in an atmosphere having a gas pressure of 0.5 Pa to form a MoW alloy film containing W at 35 atomic% and having a thickness of 300 nm. The lattice constant was 3.16 angstrom, which is almost the same as the bulk state. The resistivity of this MoW alloy film is 15 μΩ · c
m, the resistance was sufficiently lowered.

The silicon nitride film 4 is formed on the gate electrode 42.
0 is formed, and the field oxide film 4 is formed thereon.
7 ₁ are formed. In the field oxide film 47 ₁ ,
A contact hole reaching the n ⁺ regions 45a and 45b is formed, and an Al source.
Drain electrodes 46a and 46b are formed.

In the DRAM, the gate electrode 4
Although 2 is formed of silicide such as polycrystalline Si or MoSi ₂ , it has a high sheet resistance of 1 to 5 Ω / □, and when used as a wiring material between word lines of DRAM, pulse delay becomes a problem. On the other hand, when the gate electrode 42 and the word line (not shown) are formed of the same Ar-containing MoW alloy used in Example 1, the resistance is reduced to about 0.3 Ω / □ by about one digit. You can In addition, MoW alloy has heat resistance,
Since it has low resistance and excellent acid resistance, it is suitable for wiring such as a gate line and a word line, and a DRAM with high speed can be provided. Here, it can be used as a pad electrode other than the wiring.

It is needless to say that the electrode wiring board of the present invention is not limited to the DRAM and can be applied to other LSI such as ASIC. It can also be applied to SRAM as a semiconductor memory device.
In particular, regarding the electrodes, the same material as that of the address line of the first embodiment is used as a power element, for example, a gate electrode of a GTO (gate turn-off thyristor), an IGBT (insulated gate bipolar transistor), a thyristor, or an extraction electrode from a semiconductor layer. Can be applied.

[0075]

As described above, the electrode wiring material of the present invention contains W in a concentration of 10 atom% to 90 atom%.
Main component is MoW alloy , 0.0003 atomic% to 3 original
Since it contains a small amount of Kr , it has a sufficiently low resistivity and is easy to handle.

The electrode wiring board of the present invention is an electrode wiring board in which electrode wiring is formed on a glass substrate, and the electrode wiring is made of the above electrode wiring material.
Since that is highly reliable.

[Brief description of drawings]

FIG. 1 shows stress, resistivity, film peeling rate, and Ar in the film.
The characteristic view which shows the relationship with content.

FIG. 2 Stress, resistivity, film peeling rate, and Kr in the film
The characteristic view which shows the relationship with content.

FIG. 3 is a characteristic diagram showing a relationship between resistivity and Mo content.

FIG. 4 is a characteristic diagram showing the relationship between the lattice constant measured by X-ray and the Mo content.

FIG. 5 is a characteristic diagram showing a relationship between resistivity and film formation power.

FIG. 6 is a characteristic diagram showing the relationship between resistivity and gas pressure.

FIG. 7 is a characteristic diagram showing the relationship between resistivity and film formation power.

FIG. 8 is a characteristic diagram showing the relationship between resistivity and gas pressure.

9 is a sectional view taken along line IX-IX in FIG.

FIG. 10 is a plan view showing a drive circuit board of a liquid crystal display device using the electrode wiring material of the present invention.

FIG. 11 is a characteristic diagram showing the relationship between the etching rate of MoW alloy and the W content.

FIG. 12 is a characteristic diagram showing the relationship between the etching rate of MoTi alloy and the W content.

FIG. 13 is a cross-sectional view showing an example of a liquid crystal drive circuit board of a liquid crystal display device using an electrode wiring material according to a reference example .

FIG. 14 is a cross-sectional view showing another example of a liquid crystal drive circuit board of a liquid crystal display device using the electrode wiring material of the present invention.

FIG. 15 is a cross-sectional view showing a circuit board of a semiconductor device using the electrode wiring material of the present invention.

[Explanation of symbols]

1 ... Address line, 2 ... Signal line, 3, 30, 46, 10
6, 116 ... Source / drain electrodes, 4 ... Semiconductor film,
5, 19 ... Insulating film, 6 ... Pixel electrode, 7 ... Insulating film, 8 ... Color filter, 10 ... Glass substrate, 11 ... Counter electrode,
12 ... Liquid crystal layer, 13 ... Address electrode pad, 14 ... Contact hole, 15 ... Address electrode, 16 ... Liquid crystal material,
17 ... TFT, 9, 18 ... Black matrix, 20 ...
Counter substrate 21,110 ... Liquid crystal driving circuit substrate, 40 ... Silicon nitride film, 41 ... Single crystal substrate, 42, 102, 11
2 ₁ ... Gate electrode, 45 ... N ⁺ region, 47 ... Field oxide film, 103, 104 ... Polycrystalline Si, 107 ₁ , 11
7 ₃ ... interlayer insulating film, 107 ₃ ... gate oxide film, 112 ₂
... Cs wiring, 114 ... amorphous Si active layer, 115 ... n ⁺
Amorphous Si layer, 206, 216 ... Pixel electrode.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁷ Identification code FI H01L 29/78 617M (72) Inventor Masami Atsuta 33 Isoshin-cho, Isogo-ku, Yokohama, Kanagawa Prefecture ) Inventor Yujiro Hara, 33, Shinisogo-cho, Isogo-ku, Yokohama, Kanagawa Prefecture, Institute of Industrial Science and Technology, Toshiba (72) Inventor, Toshiyuki Oka 33, Isogo-cho, Isogo-ku, Yokohama, Yokohama, Kanagawa (72) ) Inventor Momoko Takemura 1 Komukai Toshiba-cho, Sachi-ku, Kawasaki City, Kanagawa Prefecture, Research & Development Center, Toshiba Corp. (56) Reference JP-A-5-263226 (JP, A) JP-A-2-1918 (JP, A) ) JP-A-6-61177 (JP, A) JP-A-7-258827 (JP, A) JP-A-6-317814 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/3205-21/3213 H01L 21/768

Claims (10)

(57) [Claims] 1. A MoW alloy containing W in a concentration of 10 atom% to 90 atom% as a main component and 0.0003 atom%
An electrode wiring material containing 3 to 3 atomic% of Kr. 2. The electrode wiring material according to claim 1, wherein Ti is added to the main component. 3. The electrode wiring material according to claim 1, wherein the content of Kr is 0.0003 atom% to 1 atom%. 4. The electrode wiring material according to claim 1, wherein the content of Kr is 0.0003 atom% to 0.5 atom%. 5. An electrode wiring board having electrode wiring formed on a glass substrate, wherein the electrode wiring is made of the electrode wiring material according to any one of claims 1 to 4. And electrode wiring board. 6. The method of claim, wherein the ratio of the lattice constant in the bulk state of the difference between the lattice constant of the electrode wiring and the lattice constant in the bulk state of the material of the electrode wire is within 3% ± 5 The electrode wiring board according to. 7. The electrode wiring board according to claim 6 , wherein the ratio is within ± 1%. 8. The electrode wiring board according to claim 5 , wherein the electrode wiring is formed by a sputtering method. 9. The electrode wiring board according to claim 5 , wherein the electrode wiring is in contact with the glass substrate. 10. The electrode wiring board according to claim 5 , further comprising an ITO electrode, wherein the electrode wiring is in contact with the ITO electrode.