US3472751A - Method and apparatus for forming deposits on a substrate by cathode sputtering using a focussed ion beam - Google Patents
Method and apparatus for forming deposits on a substrate by cathode sputtering using a focussed ion beam Download PDFInfo
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- US3472751A US3472751A US464365A US3472751DA US3472751A US 3472751 A US3472751 A US 3472751A US 464365 A US464365 A US 464365A US 3472751D A US3472751D A US 3472751DA US 3472751 A US3472751 A US 3472751A
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- 239000000758 substrate Substances 0.000 title description 38
- 238000000034 method Methods 0.000 title description 23
- 238000010884 ion-beam technique Methods 0.000 title description 15
- 238000004544 sputter deposition Methods 0.000 title description 6
- 239000000463 material Substances 0.000 description 28
- 239000002245 particle Substances 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 17
- 239000011343 solid material Substances 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 15
- 229910052786 argon Inorganic materials 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- -1 argon ion Chemical class 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000003472 neutralizing effect Effects 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 230000001464 adherent effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 150000002843 nonmetals Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/084—Ion implantation of compound devices
Definitions
- This invention relates to the formation of tenacious solid deposits in such forms as films, coatings, spots of the like.
- Forming deposits of one material on the surface of another has many purposes, such as the formation of thin films for protective purposes; in the manufacture of capacitors, coated lenses; in the formation of passivating layers for semi-conductor devices; for establishing contact to make electrical connection or simply to join one material to another. Numerous of the available techniques are unsuitable for many purposes, such as chemical methods making useful solvents or electrolytes that would affeet the surface to be coated, or methods requiring temperatures which one or the other of the materials can not tolerate. A further trouble in many cases arises when the substrate to receive the deposit and/or the material to be deposited are of such nature that a strong bond is not easily established.
- the present invention provides for the formation of a deposit of material which is highly tenacious, generally quite independently of the nature of the two materials, such that strongly adherent contact may be made between them and thin continuous films of one solid may be applied to another.
- the material is transferred from a target source to the recipient substrate surface lat high energies (5-50 kev. or more) and at low temperatures. Strongly adherent deposits may be built-up under conditions which do not adversely alfect either material.
- the transfer of material is effected by directing a high energy ion beam against the target material, under a high vacuum of less than torr pressure, to cause particles of the target material to be dislodged at high energy levels.
- a high vacuum of less than torr pressure By inclining the target surface to the ion beam the particles may be diverted to the side and deposited on a substrate surface located close by.
- the process differs from known sputtering techniques which require an appreciable pressure to provide an ionizable atmosphere in which emission of cathode material will take place, Material which is sputtered conventionally encounters many collisions with gas molecules in its path and does not strike the recipient surface at maximum energy, nor at right angles except by chance.
- the process is applicable to a wide range of materials. Those which may be deposited include metals, metal oxides, non-metals and their oxides, and other compounds used for ceramics, dielectrics, semi-conductors, glass and other solids.
- the substrate may be of almost any solid material, organic or inorganic, which is stable under high vacuum conditions.
- the process may be carried out cold, at room temperature or lower, or at elevated temperatures, as long as the vapor pressure is not too high for the required high vacuum condition that must be maintained.
- accelerators capable of producing ion beams are known to the art as is their use to remove minute quantities of material, generally for analytical purposes.
- This invention is based on the discovery that these removal techniques, when carried out under very high vacuum, may be used to provide a tightly bonded thin film or other deposit on the substrate surface.
- the apparatus of this invention consists of essentially an ion beam source mounted adjacent to a vacuum chamber, a target of material to be deposited mounted in the chamber in the path of the beam, with its exposed surface inclined to the beam, and means of supporting a closely spaced substrate material.
- the ion beam will consist of an inert gas, preferably one of the heavier gases, argon, krypton, or xenon, accelerated to an energy level suitable to cause material to be removed from the target surface.
- the ion beam source should supply a beam of at least one to ten milliamperes at an energy level of preferably five to fifty kev., although some materials can be removed at lower energy levels. At higher energy levels, the sputtering coefficient drops off as the ions then tend to penetrate too deeply and become implanted into the target. Currents lower than one milliampere are suitable but the rate of film formation is correspondingly slow, and higher currents are more practical as long as overheating is avoided.
- the figures herein given are based on actual experience, and should not be taken as suggestive that the process does not operate outside the range given.
- the preferred ion source is a duoplasmatron having a supply of argon for the ion beam, focused by an einzel electrostatic lens assembly. These are mounted to .a vacuum chamber arrangement which carries the target and a holder for the substrate.
- the preferred apparatus shown schematically in the drawing consists of a generally cylindrical chamber 10 which is maintained under a vacuum pressure of less than 10- torr through a vacuum connection 12.
- the target 14 is mounted substantially axially within the chamber on a water cooled pedestal 15 carried by a plate 16 bolted to a flanged port 17.
- the substrate 18 is carried on a support 19 suspended from a plate 20 bolted to another flanged port 21.
- the conducting supports 19 and 15 may be connected to the ground terminal as shown to carry away any resulting charge that would tend to accumulate on the target 14 or substrate 18 respectively.
- the ion beam source is a duoplasmation 24 and an einzel lens system 25 mounted within a vacuum tight chamber 26 which connects with and forms part of the houing 10.
- argon gas is introduced through a capillary to near the cathode 27 which is maintained at a moderate negative voltage, e.g., volts, with respect to the anode, and is additionally heated by a low voltage filament supply.
- a solenoid 29 and intermediate electrode 28 Surrounding the cathode 27 is a solenoid 29 and intermediate electrode 28 which together serve to provide a magnetic field to confine the argon ion plasma in well known manner.
- the anode 30 having a central opening 31 is situated beyond the intermediate electrode, and in line with it and the cathode.
- the voltage between the anode and cathode causes the argon to ionize, forming a current conducting plasma of A+ ions.
- the energy level of the argon ion is controlled by the anode 30 which is typically maintained at 30 kv. above ground.
- the argon ions are withdrawn from the duoplasmatron by the extraction electrode 32 and the negatively charged focusing electrodes 34 and 36 of the einzel lens, each of which is maintained at a moderate negative voltage, e.g., 1 to 2 kv., and are then focused as a beam into the chamber 10, against the target 14.
- Focusing is accomplished by passing the ions withdrawn by the extraction electrode 32 through a ground electrode 33, the aforementioned negative electrode 34, which is an acceleration lens, a positively charged deceleration lens electrode 35 maintained at a very high positive voltage, e.g., 15-25 kv., to condense the beam into a narrow ray, and the aforementioned second negatively biased acceleration lens electrode 36.
- the ion beam is controlled by adjusting the several voltages in well known manner.
- a heated filament e.g., of tantalum, which may be operated to neutralize the beam and prevent the accumulation of a charge on targets of dielectric material.
- a target aperture 40 preferably made of material the same as the target, just in front of the target. This serves to protect the substrate material from ion bombardment, and further narrows the beam striking the target.
- the housing is evacuated to a pressure less than 3X lO- torr, and the argon ion beam is accelerated to an energy level of 30 kev., and focused through the aperture 40, having a diameter of 1.6 centimeters.
- a narrow beam of several milliamperes is thereby caused to strike the surface of the target, which is inclined to the beam at an angle a of 30 to 60, preferably 45.
- the substrate to be coated is mounted parallel to the target about centimeters away.
- the application of a silicon dioxide film to a metal base followed by the application of a metal film provided a capacitor having a dielectric strength of about 5X10 volts per centimeter and a dielectric constant as high as 4.73.
- a characteristic of the process is the ability to deposit materials of extremely high purity. For instance, fused quartz may be applied by this process to the surface of a semiconductor to form a passivating layer.
- the method of forming a tenacious deposit of a solid material on a solid substrate surface comprising directing a beam of ions of an inert gas along a selected path at a target surface of said solid material at an energy sufiicient to sputter particles of said solid material at energies greater than thermal energies, placing said substrate surface in the path of said particles, substantially preventing the accumulation of any charge upon the target or substrate surface resulting from said beam and maintaining an ambient pressure less than 10- torr to prevent undue moderation of the energy of the sputtered particles.
- the method of forming a tenacious deposit of solid material on a solid substrate surface comprising ionizing an inert gas and forming a beam thereof, directing said beam thereof, directing said beam along a selected path, placing a target of said solid material in the path of said beam with a surface exposed to said beam inclined thereto, accelerating said beam to an energy sufiicient to sputter particles of said solid material from said exposed surface at energies greater than thermal energies, placing said substrate surface spaced from said exposed surface in the path of said particles, substantially preventing the accumulation of any charge upon the target or substrate surface resulting from said beam and maintaining an ambient pressure below 10- torr to prevent undue moderation of the energy of the sputtered particles and to permit a substantial portion of said particles to adhere to said substrate surface and form a deposit thereon.
- the inert gas is selected from the group consisting of argon, xenon and krypton.
- the solid material is selected from the group consisting of metals, metal oxides, non-metals, non-metallic oxides, ceramics, dielectrics, semiconductors and glasses.
- Apparatus for forming deposits of solid material on a solid substrate surface comprising means for forming a beam of ions of an inert gas, means for directing said beam along a selected path, a support for material to be deposited in the path of said beam and inclined thereto, a support for the article to receive said deposit adjacent to said beam and facing said inclined support, a housing providing a vacuum tight environment for said apparatus, means to form a vacuum of a pressure less than torr in said housing, a means whereby any charge upon the target or substrate surface resulting from said beam is substantially prevented from accumulating, and means for maintaining said material at temperature below its melting temperature.
- Apparatus for forming deposits of solid material on a solid substrate surface comprising means for forming a beam of positive ions of an inert gas, means for directing said beam along a selected path, electron injection means adjacent to the path of said beam for neutralizing the ions therein, a support for material to be deposited in the path of said beam and inclined thereto, a support for the article to receive said deposit adjacent to said beam and facing said inclined support, a housing providing a vacuum tight environment for said apparatus, and means to form a vacuum of a pressure less than 10" torr in said housing.
- Apparatus for forming deposits of solid material on a solid substrate surface comprising means for forming a beam of ions of an inert gas, means for directing said beam along a selected path, a support for material to be deposited in the path of said beam and inclined thereto, means for cooling said support, a support for the article to receive said deposit adjacent to said beam and facing said inclined support, an elongated housing providing a vacuum tight environment for said apparatus, a means whereby any charge upon the target or substrate surface resulting from said beam is substantially prevented from accumulating, and means to form a vacuum of a pressure less than 10- torr in said housing
- said forming means comprising a duoplasmation, an anode positioned between said duoplasrnation and said target
- said directing means comprising an einzel lens positioned between said duoplasmation and said target, said support being inclined to said beam at an angle of greater than 30 but less than References Cited UNITED STATES PATENTS 5/1957 Steigerwald 2l969 5
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
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Description
3,472,751 BSTRATE BEAM Q80 m O u 0970 0E OON O W. J. KING 0R FORMING DEPOSITS ON A SU Filed June 16, 1965 BY CA'II-IODE SPUTTERING USING A FOCUSSED ION Oct. 14, 1969 umnon AND APPARATUS F QEQ OJ INVENTOR. WILLIAM J. KING BY MZ 4%d ATTORNEYS United States Patent 3,472,751 METHOD AND APPARATUS FOR FORMING DE- POSITS ON A SUBSTRATE BY CATHODE SPUT- TERING USING A FOCUSSED ION BEAM William J. King, Reading, Mass., assignor to Ion Physics Corporation, Burlington, Mass., a corporation of Delaware Filed June 16, 1965, Ser. No. 464,365 Int. Cl. C23c 15/00 U.S. Cl. 204-192 9 Claims ABSTRACT OF THE DISCLOSURE A method and apparatus for forming a highly tenacious deposit of material on a substrate by directing a high energy ion beam against the target, composed of the material that is to be deposited, in the presence of a vacuum of less than 10- Torr to cause high energy particles of target material to be removed by sputtering and directing the removed, sputtered, particles against the substrate.
This invention relates to the formation of tenacious solid deposits in such forms as films, coatings, spots of the like.
Forming deposits of one material on the surface of another has many purposes, such as the formation of thin films for protective purposes; in the manufacture of capacitors, coated lenses; in the formation of passivating layers for semi-conductor devices; for establishing contact to make electrical connection or simply to join one material to another. Numerous of the available techniques are unsuitable for many purposes, such as chemical methods making useful solvents or electrolytes that would affeet the surface to be coated, or methods requiring temperatures which one or the other of the materials can not tolerate. A further trouble in many cases arises when the substrate to receive the deposit and/or the material to be deposited are of such nature that a strong bond is not easily established.
The present invention provides for the formation of a deposit of material which is highly tenacious, generally quite independently of the nature of the two materials, such that strongly adherent contact may be made between them and thin continuous films of one solid may be applied to another.
In the process of this invention the material is transferred from a target source to the recipient substrate surface lat high energies (5-50 kev. or more) and at low temperatures. Strongly adherent deposits may be built-up under conditions which do not adversely alfect either material.
The transfer of material is effected by directing a high energy ion beam against the target material, under a high vacuum of less than torr pressure, to cause particles of the target material to be dislodged at high energy levels. By inclining the target surface to the ion beam the particles may be diverted to the side and deposited on a substrate surface located close by.
The process differs from known sputtering techniques which require an appreciable pressure to provide an ionizable atmosphere in which emission of cathode material will take place, Material which is sputtered conventionally encounters many collisions with gas molecules in its path and does not strike the recipient surface at maximum energy, nor at right angles except by chance.
In the process of this invention all of the material removed from the target by the ion beam travels directly to the substrate surface. Because of the high vacuum few, if any, collisions with other particles are encountered, and the particles accordingly hit the substrate surface at high energy and establish an extremely tenacious contact. It is "ice :assumed that the target material will in many cases penetrate or become embedded in the surface layer of molecules and become physically held to the recipient surface.
The process is applicable to a wide range of materials. Those which may be deposited include metals, metal oxides, non-metals and their oxides, and other compounds used for ceramics, dielectrics, semi-conductors, glass and other solids.
The substrate may be of almost any solid material, organic or inorganic, which is stable under high vacuum conditions. The process may be carried out cold, at room temperature or lower, or at elevated temperatures, as long as the vapor pressure is not too high for the required high vacuum condition that must be maintained.
Any of a number of accelerators capable of producing ion beams are known to the art as is their use to remove minute quantities of material, generally for analytical purposes. This invention is based on the discovery that these removal techniques, when carried out under very high vacuum, may be used to provide a tightly bonded thin film or other deposit on the substrate surface.
The apparatus of this invention consists of essentially an ion beam source mounted adjacent to a vacuum chamber, a target of material to be deposited mounted in the chamber in the path of the beam, with its exposed surface inclined to the beam, and means of supporting a closely spaced substrate material.
For the purposes of this invention the ion beam will consist of an inert gas, preferably one of the heavier gases, argon, krypton, or xenon, accelerated to an energy level suitable to cause material to be removed from the target surface.
The ion beam source should supply a beam of at least one to ten milliamperes at an energy level of preferably five to fifty kev., although some materials can be removed at lower energy levels. At higher energy levels, the sputtering coefficient drops off as the ions then tend to penetrate too deeply and become implanted into the target. Currents lower than one milliampere are suitable but the rate of film formation is correspondingly slow, and higher currents are more practical as long as overheating is avoided. The figures herein given are based on actual experience, and should not be taken as suggestive that the process does not operate outside the range given.
The preferred ion source is a duoplasmatron having a supply of argon for the ion beam, focused by an einzel electrostatic lens assembly. These are mounted to .a vacuum chamber arrangement which carries the target and a holder for the substrate.
The apparatus and method of using it, which constitute this invention, will be better understood from the following detailed description and the accompanying drawing.
The preferred apparatus shown schematically in the drawing consists of a generally cylindrical chamber 10 which is maintained under a vacuum pressure of less than 10- torr through a vacuum connection 12. The target 14 is mounted substantially axially within the chamber on a water cooled pedestal 15 carried by a plate 16 bolted to a flanged port 17. In a similar manner the substrate 18 is carried on a support 19 suspended from a plate 20 bolted to another flanged port 21.
The conducting supports 19 and 15 may be connected to the ground terminal as shown to carry away any resulting charge that would tend to accumulate on the target 14 or substrate 18 respectively.
The ion beam source is a duoplasmation 24 and an einzel lens system 25 mounted within a vacuum tight chamber 26 which connects with and forms part of the houing 10. In the duoplasmation, argon gas is introduced through a capillary to near the cathode 27 which is maintained at a moderate negative voltage, e.g., volts, with respect to the anode, and is additionally heated by a low voltage filament supply. Surrounding the cathode 27 is a solenoid 29 and intermediate electrode 28 which together serve to provide a magnetic field to confine the argon ion plasma in well known manner. The anode 30 having a central opening 31 is situated beyond the intermediate electrode, and in line with it and the cathode. The voltage between the anode and cathode causes the argon to ionize, forming a current conducting plasma of A+ ions. The energy level of the argon ion is controlled by the anode 30 which is typically maintained at 30 kv. above ground. The argon ions are withdrawn from the duoplasmatron by the extraction electrode 32 and the negatively charged focusing electrodes 34 and 36 of the einzel lens, each of which is maintained at a moderate negative voltage, e.g., 1 to 2 kv., and are then focused as a beam into the chamber 10, against the target 14. Focusing is accomplished by passing the ions withdrawn by the extraction electrode 32 through a ground electrode 33, the aforementioned negative electrode 34, which is an acceleration lens, a positively charged deceleration lens electrode 35 maintained at a very high positive voltage, e.g., 15-25 kv., to condense the beam into a narrow ray, and the aforementioned second negatively biased acceleration lens electrode 36. The ion beam is controlled by adjusting the several voltages in well known manner.
Within the chamber and close by the path of the beam is mounted a heated filament, e.g., of tantalum, which may be operated to neutralize the beam and prevent the accumulation of a charge on targets of dielectric material.
Additional control over the beam is provided by mounting a target aperture 40, preferably made of material the same as the target, just in front of the target. This serves to protect the substrate material from ion bombardment, and further narrows the beam striking the target.
In a typical operation the housing is evacuated to a pressure less than 3X lO- torr, and the argon ion beam is accelerated to an energy level of 30 kev., and focused through the aperture 40, having a diameter of 1.6 centimeters. A narrow beam of several milliamperes is thereby caused to strike the surface of the target, which is inclined to the beam at an angle a of 30 to 60, preferably 45. The substrate to be coated is mounted parallel to the target about centimeters away.
The rates at which various materials have been found to deposit are given in the following table:
POSITIVE ARGON IONS AT 30 KEV., a=45, L=5 cm., =1.6 cm.
A./minute/milliampere where a equals the angle of inclination of the target to the beam: L equals the distance between the substrate and the target; 4: equals the diameter of the aperture 40; and A. equals Angstroms.
Various films have been applied to several substrate materials including glass, Mylar and various metals. It was noted that when either silicon or carbon was applied to a Mylar base, they adhered with such great tenacity and strength that the films could be wrinkled severely with negligible effect on the physical or electrical characteristics of the film.
The application of a silicon dioxide film to a metal base followed by the application of a metal film provided a capacitor having a dielectric strength of about 5X10 volts per centimeter and a dielectric constant as high as 4.73.
A characteristic of the process is the ability to deposit materials of extremely high purity. For instance, fused quartz may be applied by this process to the surface of a semiconductor to form a passivating layer.
Although this invention has been described in detail with reference to the presently preferred embodiments, it is contemplated that modifications will occur to those skilled in the art and familiar with the principles herein disclosed, and that such modifications may be made without departing from the scope of the invention. In addition, while the invention is generally described as utilizing a beam of ions of an inert gas, it should be noted that the effect of the neutralizing filament 37 is to add electrons to the positively charged ion beam, to neutralize it, through the formation of atom particles. The formation of ions is necessary for electrostatic acceleration, but for bombardment purposes it is immaterial whether the particles are charged ions or neutral atoms.
Having thus disclosed my invention and described in detail the preferred embodiment thereof, I claim and desire to secure by Letters Patent:
1. The method of forming a tenacious deposit of a solid material on a solid substrate surface comprising directing a beam of ions of an inert gas along a selected path at a target surface of said solid material at an energy sufiicient to sputter particles of said solid material at energies greater than thermal energies, placing said substrate surface in the path of said particles, substantially preventing the accumulation of any charge upon the target or substrate surface resulting from said beam and maintaining an ambient pressure less than 10- torr to prevent undue moderation of the energy of the sputtered particles.
2. The method of forming a tenacious deposit of solid material on a solid substrate surface comprising ionizing an inert gas and forming a beam thereof, directing said beam thereof, directing said beam along a selected path, placing a target of said solid material in the path of said beam with a surface exposed to said beam inclined thereto, accelerating said beam to an energy sufiicient to sputter particles of said solid material from said exposed surface at energies greater than thermal energies, placing said substrate surface spaced from said exposed surface in the path of said particles, substantially preventing the accumulation of any charge upon the target or substrate surface resulting from said beam and maintaining an ambient pressure below 10- torr to prevent undue moderation of the energy of the sputtered particles and to permit a substantial portion of said particles to adhere to said substrate surface and form a deposit thereon.
3. The method of forming a tenacious deposit of solid material on a solid substrate surface comprising ionizing an inert gas and forming a beam thereof, directing said beam along a selected path, placing a target of said solid material in the path of said beam with a surface exposed to said beam inclined thereto, cooling said target to below its melting temperature accelerating said beam to an energy of between about 5 kev. and about 50 kev. to sputter particles from the surface of the target at energies greater than thermal energies, placing said substrate surface spaced from said exposed surface in the path of said particles, substantially preventing the accumulation of charge upon the target or substrate surface resulting from the said beam and maintaining an ambient pressure below 10' torr to permit a substantial portion of said particles to adhere to said substrate surface and form a deposit thereon.
4. The method of forming a tenacious deposit of solid material on a solid substrate surface comprising ionizing an inert gas and forming a beam thereof, directing said beam along a selected path, placing a target of said solid material in the path of said beam with a surface exposed to said beam inclined thereto accelerating said beam to an energy sufficient to remove particles of said solid material from said exposed surface, neutralizing said beam to discharge the ions and form atoms thereof, placing said substrate surface spaced from said exposed surface in the path of said particles, and maintaining an ambient pressure sufliciently low to permit a substantial portion of said particles to adhere to said substrate surface and form a deposit thereon.
5. The method defined by claim 1 wherein the inert gas is selected from the group consisting of argon, xenon and krypton.
'6. The method defined by claim 1 wherein the solid material is selected from the group consisting of metals, metal oxides, non-metals, non-metallic oxides, ceramics, dielectrics, semiconductors and glasses.
7. Apparatus for forming deposits of solid material on a solid substrate surface comprising means for forming a beam of ions of an inert gas, means for directing said beam along a selected path, a support for material to be deposited in the path of said beam and inclined thereto, a support for the article to receive said deposit adjacent to said beam and facing said inclined support, a housing providing a vacuum tight environment for said apparatus, means to form a vacuum of a pressure less than torr in said housing, a means whereby any charge upon the target or substrate surface resulting from said beam is substantially prevented from accumulating, and means for maintaining said material at temperature below its melting temperature.
8. Apparatus for forming deposits of solid material on a solid substrate surface comprising means for forming a beam of positive ions of an inert gas, means for directing said beam along a selected path, electron injection means adjacent to the path of said beam for neutralizing the ions therein, a support for material to be deposited in the path of said beam and inclined thereto, a support for the article to receive said deposit adjacent to said beam and facing said inclined support, a housing providing a vacuum tight environment for said apparatus, and means to form a vacuum of a pressure less than 10" torr in said housing.
9. Apparatus for forming deposits of solid material on a solid substrate surface comprising means for forming a beam of ions of an inert gas, means for directing said beam along a selected path, a support for material to be deposited in the path of said beam and inclined thereto, means for cooling said support, a support for the article to receive said deposit adjacent to said beam and facing said inclined support, an elongated housing providing a vacuum tight environment for said apparatus, a means whereby any charge upon the target or substrate surface resulting from said beam is substantially prevented from accumulating, and means to form a vacuum of a pressure less than 10- torr in said housing said forming means comprising a duoplasmation, an anode positioned between said duoplasrnation and said target, said directing means comprising an einzel lens positioned between said duoplasmation and said target, said support being inclined to said beam at an angle of greater than 30 but less than References Cited UNITED STATES PATENTS 5/1957 Steigerwald 2l969 5/1957 Steigerwald 219-69 OTHER REFERENCES ALFRED L. LEAVITT, Primary Examiner J. .H. NEWSOME, Assistant Examiner
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46436565A | 1965-06-16 | 1965-06-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3472751A true US3472751A (en) | 1969-10-14 |
Family
ID=23843654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US464365A Expired - Lifetime US3472751A (en) | 1965-06-16 | 1965-06-16 | Method and apparatus for forming deposits on a substrate by cathode sputtering using a focussed ion beam |
Country Status (4)
Country | Link |
---|---|
US (1) | US3472751A (en) |
DE (1) | DE1521327A1 (en) |
GB (1) | GB1133936A (en) |
NL (1) | NL6608211A (en) |
Cited By (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3625848A (en) * | 1968-12-26 | 1971-12-07 | Alvin A Snaper | Arc deposition process and apparatus |
US3790411A (en) * | 1972-03-08 | 1974-02-05 | Bell Telephone Labor Inc | Method for doping semiconductor bodies by neutral particle implantation |
US3904505A (en) * | 1970-03-20 | 1975-09-09 | Space Sciences Inc | Apparatus for film deposition |
US3925187A (en) * | 1971-03-25 | 1975-12-09 | Centre Nat Etd Spatiales | Apparatus for the formation of coatings on a substratum |
US3929512A (en) * | 1970-12-09 | 1975-12-30 | Philips Corp | Semiconductor devices |
US4001049A (en) * | 1975-06-11 | 1977-01-04 | International Business Machines Corporation | Method for improving dielectric breakdown strength of insulating-glassy-material layer of a device including ion implantation therein |
US4046712A (en) * | 1972-11-30 | 1977-09-06 | United Kingdom Atomic Energy Authority | Catalysts sputtered on substantially nonporous low surface area particulate supports |
US4047975A (en) * | 1975-07-02 | 1977-09-13 | Siemens Aktiengesellschaft | Process for the production of a bipolar integrated circuit |
US4059067A (en) * | 1974-10-09 | 1977-11-22 | Balzers Patent-Und Beteiligungs-Aktiengesellschaft | Apparatus for determining the rate of flow of particles in a vacuum deposition device |
US4086108A (en) * | 1976-06-24 | 1978-04-25 | Agency Of Industrial Science & Technology | Selective doping crystal growth method |
US4108751A (en) * | 1977-06-06 | 1978-08-22 | King William J | Ion beam implantation-sputtering |
US4210701A (en) * | 1972-08-14 | 1980-07-01 | Precision Thin Film Corporation | Method and apparatus for depositing film on a substrate, and products produced thereby |
US4278890A (en) * | 1977-07-01 | 1981-07-14 | The United States Of America As Represented By The United States Department Of Energy | Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering |
US4384911A (en) * | 1978-07-31 | 1983-05-24 | Precision Thin Film Corporation | Method for depositing hard film on a substrate |
US4503125A (en) * | 1979-10-01 | 1985-03-05 | Xebec, Inc. | Protective overcoating for magnetic recording discs and method for forming the same |
US4537791A (en) * | 1984-03-27 | 1985-08-27 | Cordis Corporation | Carbon coating of grafts or catheters |
US4539068A (en) * | 1979-09-20 | 1985-09-03 | Fujitsu Limited | Vapor phase growth method |
US4747922A (en) * | 1986-03-25 | 1988-05-31 | The United States Of America As Represented By The United States Department Of Energy | Confined ion beam sputtering device and method |
US4782235A (en) * | 1983-08-12 | 1988-11-01 | Centre National De La Recherche Scientifique | Source of ions with at least two ionization chambers, in particular for forming chemically reactive ion beams |
WO1988008460A1 (en) * | 1987-04-29 | 1988-11-03 | Vent-Plant Corporation | Method of manufacturing synthetic bone coated surgical implants |
US4885068A (en) * | 1988-09-08 | 1989-12-05 | Joshin Uramoto | Sheet plasma sputtering method and an apparatus for carrying out the method |
US4885070A (en) * | 1988-02-12 | 1989-12-05 | Leybold Aktiengesellschaft | Method and apparatus for the application of materials |
US5054902A (en) * | 1975-12-29 | 1991-10-08 | King William J | Light control with color enhancement |
US5082545A (en) * | 1988-12-15 | 1992-01-21 | Matsushita Electric Industrial Co., Ltd. | Sputtering apparatus |
US5084151A (en) * | 1985-11-26 | 1992-01-28 | Sorin Biomedica S.P.A. | Method and apparatus for forming prosthetic device having a biocompatible carbon film thereon |
US5133845A (en) * | 1986-12-12 | 1992-07-28 | Sorin Biomedica, S.P.A. | Method for making prosthesis of polymeric material coated with biocompatible carbon |
US5370684A (en) * | 1986-12-12 | 1994-12-06 | Sorin Biomedica S.P.A. | Prosthesis of polymeric material coated with biocompatible carbon |
US5387247A (en) * | 1983-10-25 | 1995-02-07 | Sorin Biomedia S.P.A. | Prosthetic device having a biocompatible carbon film thereon and a method of and apparatus for forming such device |
US5458754A (en) * | 1991-04-22 | 1995-10-17 | Multi-Arc Scientific Coatings | Plasma enhancement apparatus and method for physical vapor deposition |
US6036824A (en) * | 1985-11-12 | 2000-03-14 | Magnetic Media Development Llc | Magnetic recording disk sputtering process and apparatus |
US20110139605A1 (en) * | 2009-12-14 | 2011-06-16 | Spp Process Technology Systems Uk Limited | Ion beam source |
US9142387B2 (en) | 2009-10-27 | 2015-09-22 | Entegris, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
US9455147B2 (en) | 2005-08-30 | 2016-09-27 | Entegris, Inc. | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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GB2069008B (en) * | 1980-01-16 | 1984-09-12 | Secr Defence | Coating in a glow discharge |
GB8629409D0 (en) * | 1986-12-09 | 1987-01-21 | Evans B L | Multilayered structures |
DE3737142A1 (en) * | 1987-11-02 | 1989-05-11 | Christiansen Jens | GENERATION OF (THICK) LAYERS FROM HIGH-MELTING OR SUBLIMING MATERIAL (CONDUCTING, SEMICONDUCTING AND NON-CONDUCTING) AND MIXTURES OF THEM WITH PSEUDO RADIO EMISSIONS |
GB2213501A (en) * | 1987-12-11 | 1989-08-16 | Plessey Co Plc | Production of superconducting thin films by ion beam sputtering from a single ceramic target |
GB2399350B (en) * | 2003-03-11 | 2006-06-21 | Trikon Technologies Ltd | Methods of forming tungsten or tungsten containing films |
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US2793282A (en) * | 1951-01-31 | 1957-05-21 | Zeiss Carl | Forming spherical bodies by electrons |
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1965
- 1965-06-16 US US464365A patent/US3472751A/en not_active Expired - Lifetime
-
1966
- 1966-06-14 DE DE19661521327 patent/DE1521327A1/en active Pending
- 1966-06-14 NL NL6608211A patent/NL6608211A/xx unknown
- 1966-06-15 GB GB26790/66A patent/GB1133936A/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US2793282A (en) * | 1951-01-31 | 1957-05-21 | Zeiss Carl | Forming spherical bodies by electrons |
US2793281A (en) * | 1951-01-31 | 1957-05-21 | Zeiss Carl | Drilling by electrons |
Cited By (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3625848A (en) * | 1968-12-26 | 1971-12-07 | Alvin A Snaper | Arc deposition process and apparatus |
US3904505A (en) * | 1970-03-20 | 1975-09-09 | Space Sciences Inc | Apparatus for film deposition |
US3929512A (en) * | 1970-12-09 | 1975-12-30 | Philips Corp | Semiconductor devices |
US3925187A (en) * | 1971-03-25 | 1975-12-09 | Centre Nat Etd Spatiales | Apparatus for the formation of coatings on a substratum |
US3790411A (en) * | 1972-03-08 | 1974-02-05 | Bell Telephone Labor Inc | Method for doping semiconductor bodies by neutral particle implantation |
US4210701A (en) * | 1972-08-14 | 1980-07-01 | Precision Thin Film Corporation | Method and apparatus for depositing film on a substrate, and products produced thereby |
US4046712A (en) * | 1972-11-30 | 1977-09-06 | United Kingdom Atomic Energy Authority | Catalysts sputtered on substantially nonporous low surface area particulate supports |
US4059067A (en) * | 1974-10-09 | 1977-11-22 | Balzers Patent-Und Beteiligungs-Aktiengesellschaft | Apparatus for determining the rate of flow of particles in a vacuum deposition device |
US4001049A (en) * | 1975-06-11 | 1977-01-04 | International Business Machines Corporation | Method for improving dielectric breakdown strength of insulating-glassy-material layer of a device including ion implantation therein |
US4047975A (en) * | 1975-07-02 | 1977-09-13 | Siemens Aktiengesellschaft | Process for the production of a bipolar integrated circuit |
US5054902A (en) * | 1975-12-29 | 1991-10-08 | King William J | Light control with color enhancement |
US4086108A (en) * | 1976-06-24 | 1978-04-25 | Agency Of Industrial Science & Technology | Selective doping crystal growth method |
US4108751A (en) * | 1977-06-06 | 1978-08-22 | King William J | Ion beam implantation-sputtering |
DE2824818A1 (en) * | 1977-06-06 | 1978-12-07 | William James Dr King | ION BEAM SPUTTER IMPLANTING PROCEDURE |
US4278890A (en) * | 1977-07-01 | 1981-07-14 | The United States Of America As Represented By The United States Department Of Energy | Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering |
US4384911A (en) * | 1978-07-31 | 1983-05-24 | Precision Thin Film Corporation | Method for depositing hard film on a substrate |
US4539068A (en) * | 1979-09-20 | 1985-09-03 | Fujitsu Limited | Vapor phase growth method |
US4503125A (en) * | 1979-10-01 | 1985-03-05 | Xebec, Inc. | Protective overcoating for magnetic recording discs and method for forming the same |
US4782235A (en) * | 1983-08-12 | 1988-11-01 | Centre National De La Recherche Scientifique | Source of ions with at least two ionization chambers, in particular for forming chemically reactive ion beams |
US5387247A (en) * | 1983-10-25 | 1995-02-07 | Sorin Biomedia S.P.A. | Prosthetic device having a biocompatible carbon film thereon and a method of and apparatus for forming such device |
US4537791A (en) * | 1984-03-27 | 1985-08-27 | Cordis Corporation | Carbon coating of grafts or catheters |
US6036824A (en) * | 1985-11-12 | 2000-03-14 | Magnetic Media Development Llc | Magnetic recording disk sputtering process and apparatus |
US5084151A (en) * | 1985-11-26 | 1992-01-28 | Sorin Biomedica S.P.A. | Method and apparatus for forming prosthetic device having a biocompatible carbon film thereon |
US4747922A (en) * | 1986-03-25 | 1988-05-31 | The United States Of America As Represented By The United States Department Of Energy | Confined ion beam sputtering device and method |
US5133845A (en) * | 1986-12-12 | 1992-07-28 | Sorin Biomedica, S.P.A. | Method for making prosthesis of polymeric material coated with biocompatible carbon |
US5370684A (en) * | 1986-12-12 | 1994-12-06 | Sorin Biomedica S.P.A. | Prosthesis of polymeric material coated with biocompatible carbon |
WO1988008460A1 (en) * | 1987-04-29 | 1988-11-03 | Vent-Plant Corporation | Method of manufacturing synthetic bone coated surgical implants |
US4885070A (en) * | 1988-02-12 | 1989-12-05 | Leybold Aktiengesellschaft | Method and apparatus for the application of materials |
US4885068A (en) * | 1988-09-08 | 1989-12-05 | Joshin Uramoto | Sheet plasma sputtering method and an apparatus for carrying out the method |
US5082545A (en) * | 1988-12-15 | 1992-01-21 | Matsushita Electric Industrial Co., Ltd. | Sputtering apparatus |
US5458754A (en) * | 1991-04-22 | 1995-10-17 | Multi-Arc Scientific Coatings | Plasma enhancement apparatus and method for physical vapor deposition |
US6139964A (en) * | 1991-04-22 | 2000-10-31 | Multi-Arc Inc. | Plasma enhancement apparatus and method for physical vapor deposition |
US9455147B2 (en) | 2005-08-30 | 2016-09-27 | Entegris, Inc. | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
US9142387B2 (en) | 2009-10-27 | 2015-09-22 | Entegris, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
US9685304B2 (en) | 2009-10-27 | 2017-06-20 | Entegris, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
US20110139605A1 (en) * | 2009-12-14 | 2011-06-16 | Spp Process Technology Systems Uk Limited | Ion beam source |
US8968535B2 (en) * | 2009-12-14 | 2015-03-03 | Spp Process Technology Systems Uk Limited | Ion beam source |
Also Published As
Publication number | Publication date |
---|---|
DE1521327A1 (en) | 1969-08-07 |
GB1133936A (en) | 1968-11-20 |
NL6608211A (en) | 1966-12-19 |
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