GB994911A - Improvements in or relating to sputtering apparatus - Google Patents

Improvements in or relating to sputtering apparatus

Info

Publication number
GB994911A
GB994911A GB32702/62A GB3270262A GB994911A GB 994911 A GB994911 A GB 994911A GB 32702/62 A GB32702/62 A GB 32702/62A GB 3270262 A GB3270262 A GB 3270262A GB 994911 A GB994911 A GB 994911A
Authority
GB
United Kingdom
Prior art keywords
plasma
target electrode
main anode
low
alternating potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB32702/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Guidance and Electronics Co Inc
Original Assignee
Litton Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Litton Systems Inc filed Critical Litton Systems Inc
Publication of GB994911A publication Critical patent/GB994911A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)

Abstract

A sputtering process comprises providing a gas discharge plasma and a target electrode, and supplying an alternating potential between said target electrode and said plasma to induce particle bombardment of the target electrode. A suitable target 54 is mounted on the target electrode 53 in particle intercepting relationship with said plasma generated by a mercury pool and main anode 50. The surface to be sputtered is 58. The alternating potential has a radio frequency higher than 25,000 cycles per second and preferably at 50 megacycles. The plasma is a low-pressure, high density gas discharge plasma. The main anode 50 is connected via 51 to a 200v. D.C. supply and the main discharge of about 5 amps. at 30v. potential drop is established between the mercury pool 23 and the main anode 50 to cause the envelope 11 to be filled with low-pressure mercury plasma with a density of 1011-1012 ions per c.c. Alternatively gases, e.g. A, He, may be admitted through inlet 16 to the low pressure envelope. The alternating potential is impressed between the target electrode 53 and the main anode 50. Non-conducting materials such as quarts, glass, ferrites or diamonds may be sputtered as well as metals and alternate layers of insulators and conductors may be formed. <PICT:0994911/C6-C7/1>
GB32702/62A 1961-08-28 1962-08-24 Improvements in or relating to sputtering apparatus Expired GB994911A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US134457A US3233137A (en) 1961-08-28 1961-08-28 Method and apparatus for cleansing by ionic bombardment

Publications (1)

Publication Number Publication Date
GB994911A true GB994911A (en) 1965-06-10

Family

ID=22463483

Family Applications (2)

Application Number Title Priority Date Filing Date
GB32701/62A Expired GB1008363A (en) 1961-08-28 1962-08-24 Improvements in or relating to electric discharge apparatus
GB32702/62A Expired GB994911A (en) 1961-08-28 1962-08-24 Improvements in or relating to sputtering apparatus

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB32701/62A Expired GB1008363A (en) 1961-08-28 1962-08-24 Improvements in or relating to electric discharge apparatus

Country Status (2)

Country Link
US (1) US3233137A (en)
GB (2) GB1008363A (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3347772A (en) * 1964-03-02 1967-10-17 Schjeldahl Co G T Rf sputtering apparatus including a capacitive lead-in for an rf potential
US3317354A (en) * 1964-05-28 1967-05-02 Gen Electric Process for doping a diamond in a gaseous electrical discharge
US3369990A (en) * 1964-12-31 1968-02-20 Ibm Cathodic sputtering apparatus including thermionic means for increasing sputtering efficiency
US3525680A (en) * 1965-12-20 1970-08-25 Ibm Method and apparatus for the radio frequency sputtering of dielectric materials
US3669861A (en) * 1967-08-28 1972-06-13 Texas Instruments Inc R. f. discharge cleaning to improve adhesion
US3627663A (en) * 1968-03-25 1971-12-14 Ibm Method and apparatus for coating a substrate by utilizing the hollow cathode effect with rf sputtering
BE758321A (en) * 1969-11-03 1971-04-01 Rca Corp PROCESS FOR METALLIZING SEMICONDUCTOR DEVICES
US3708418A (en) * 1970-03-05 1973-01-02 Rca Corp Apparatus for etching of thin layers of material by ion bombardment
US3640812A (en) * 1970-09-02 1972-02-08 Rca Corp Method of making electrical contacts on the surface of a semiconductor device
FR2108832B1 (en) * 1970-10-09 1973-11-23 Comp Generale Electricite
US3933644A (en) * 1972-03-23 1976-01-20 Varian Associates Sputter coating apparatus having improved target electrode structure
JPS5779169A (en) * 1980-11-06 1982-05-18 Sumitomo Electric Ind Ltd Physical vapor deposition method
JPH0770509B2 (en) * 1982-10-08 1995-07-31 株式会社日立製作所 Dry process equipment
US4534921A (en) * 1984-03-06 1985-08-13 Asm Fico Tooling, B.V. Method and apparatus for mold cleaning by reverse sputtering
JPH0655600B2 (en) * 1985-10-29 1994-07-27 ヒュ−ズ・エアクラフト・カンパニ− Oxygen particle irradiation method, particle beam irradiation method, contaminant film cleaning method, and method for extending the life of artificial satellites and spacecraft
US5391281A (en) * 1993-04-09 1995-02-21 Materials Research Corp. Plasma shaping plug for control of sputter etching
US5639356A (en) * 1995-09-28 1997-06-17 Texas Instruments Incorporated Field emission device high voltage pulse system and method
JP4627916B2 (en) * 2001-03-29 2011-02-09 キヤノンアネルバ株式会社 Ionizer
US7557362B2 (en) * 2004-02-04 2009-07-07 Veeco Instruments Inc. Ion sources and methods for generating an ion beam with a controllable ion current density distribution
US8158016B2 (en) * 2004-02-04 2012-04-17 Veeco Instruments, Inc. Methods of operating an electromagnet of an ion source

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2774013A (en) * 1949-04-07 1956-12-11 Gen Electric Electric discharge lamp
US2877338A (en) * 1954-10-22 1959-03-10 James Knights Company Method of adjusting the operating frequency of sealed piezoelectric crystals
US2947913A (en) * 1956-12-27 1960-08-02 Gen Dynamics Corp Gas tube switch

Also Published As

Publication number Publication date
GB1008363A (en) 1965-10-27
US3233137A (en) 1966-02-01

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