GB1496590A - Sputtered dielectric thin films - Google Patents

Sputtered dielectric thin films

Info

Publication number
GB1496590A
GB1496590A GB50078/75A GB5007875A GB1496590A GB 1496590 A GB1496590 A GB 1496590A GB 50078/75 A GB50078/75 A GB 50078/75A GB 5007875 A GB5007875 A GB 5007875A GB 1496590 A GB1496590 A GB 1496590A
Authority
GB
United Kingdom
Prior art keywords
ratio
chamber
gas
dec
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB50078/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Technology Corp
Original Assignee
Bell Northern Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bell Northern Research Ltd filed Critical Bell Northern Research Ltd
Publication of GB1496590A publication Critical patent/GB1496590A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0084—Producing gradient compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/25—Metals
    • C03C2217/263—Metals other than noble metals, Cu or Hg
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Filters (AREA)
  • Surface Treatment Of Glass (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

1496590 Sputtering Nb or Ta in O 2 and N 2 BELL-NORTHERN RESEARCH Ltd 5 Dec 1975 [6 Dec 1974] 50078/75 Heading C7F [Also in Division G2] A chamber is evacuated, O 2 and N 2 are separately fed into the chamber, the flows being adjusted to give a predetermined pressure and O 2 : N 2 ratio, a target of Nb or Ta is sputtered in the resulting atmosphere on to a substrate, and during sputtering the relative flows of O 2 and N 2 are varied as necessary to give predetermined variation in the gas ratio, which in turn varies the ratio of O 2 :N 2 included in the deposited film. Graphs are given relating refractive index and dielectric properties to the gas ratio; variation of this may be continuous or step-wise so that the properties of the deposit change accordingly. A substrate, e.g. of glass, is mounted on a rotating holder above an apertured anode, the cathode of Nb or Ta being aligned with the aperture; separate feed lines are provided for N 2 and O 2 , and a bleed line to a mass spectrometer permits sampling of the gas in the chamber to monitor O 2 :N 2 ratio variations.
GB50078/75A 1974-12-06 1975-12-05 Sputtered dielectric thin films Expired GB1496590A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA215,398A CA1014889A (en) 1974-12-06 1974-12-06 Sputtered dielectric thin films

Publications (1)

Publication Number Publication Date
GB1496590A true GB1496590A (en) 1977-12-30

Family

ID=4101793

Family Applications (1)

Application Number Title Priority Date Filing Date
GB50078/75A Expired GB1496590A (en) 1974-12-06 1975-12-05 Sputtered dielectric thin films

Country Status (7)

Country Link
JP (1) JPS62229B2 (en)
CA (1) CA1014889A (en)
DE (1) DE2554854A1 (en)
FR (1) FR2333056A1 (en)
GB (1) GB1496590A (en)
NL (1) NL7514208A (en)
SE (1) SE435298B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2264718A (en) * 1992-03-04 1993-09-08 Univ Hull Vapour deposited coatings having at least three transitions in structure
GB2310218A (en) * 1996-02-13 1997-08-20 Marconi Gec Ltd Oxynitride coatings
GB2345919A (en) * 1999-01-20 2000-07-26 Marconi Caswell Ltd Depositing material

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142958A (en) * 1978-04-13 1979-03-06 Litton Systems, Inc. Method for fabricating multi-layer optical films
DE3027256A1 (en) * 1980-07-18 1982-02-18 Robert Bosch Gmbh, 7000 Stuttgart MULTILAYER SYSTEM FOR HEAT PROTECTION APPLICATIONS AND METHOD FOR THE PRODUCTION THEREOF
JPS57177971A (en) * 1981-04-28 1982-11-01 Yoichi Murayama High frequency ion plating device
JPS58140705A (en) * 1982-02-15 1983-08-20 Fujitsu Ltd Optical filter and its production
JPH0610926B2 (en) * 1985-05-23 1994-02-09 松下電器産業株式会社 Dielectric film manufacturing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3558461A (en) * 1968-10-28 1971-01-26 Bell Telephone Labor Inc Thin film resistor and preparation thereof
DE2215151C3 (en) * 1972-03-28 1979-05-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for producing thin layers of tantalum

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2264718A (en) * 1992-03-04 1993-09-08 Univ Hull Vapour deposited coatings having at least three transitions in structure
GB2264718B (en) * 1992-03-04 1995-04-26 Univ Hull Coatings produced by vapour deposition
GB2310218A (en) * 1996-02-13 1997-08-20 Marconi Gec Ltd Oxynitride coatings
GB2310218B (en) * 1996-02-13 1999-12-22 Marconi Gec Ltd Coatings
GB2345919A (en) * 1999-01-20 2000-07-26 Marconi Caswell Ltd Depositing material

Also Published As

Publication number Publication date
SE7513312L (en) 1976-06-08
CA1014889A (en) 1977-08-02
DE2554854A1 (en) 1976-06-16
FR2333056A1 (en) 1977-06-24
SE435298B (en) 1984-09-17
JPS62229B2 (en) 1987-01-06
NL7514208A (en) 1976-06-09
JPS5192740A (en) 1976-08-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee