JPS5662965A - Sputtering apparatus - Google Patents

Sputtering apparatus

Info

Publication number
JPS5662965A
JPS5662965A JP13684979A JP13684979A JPS5662965A JP S5662965 A JPS5662965 A JP S5662965A JP 13684979 A JP13684979 A JP 13684979A JP 13684979 A JP13684979 A JP 13684979A JP S5662965 A JPS5662965 A JP S5662965A
Authority
JP
Japan
Prior art keywords
recess
film thickness
substrate holder
metallic mesh
thickness meter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13684979A
Other languages
Japanese (ja)
Inventor
Keiji Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13684979A priority Critical patent/JPS5662965A/en
Publication of JPS5662965A publication Critical patent/JPS5662965A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To control film thickness at a high precision compared with conventional method so as to improve working efficiency, by forming a recess at a position on a substrate holder which faces to the target of an apparatus described in the title, by covering the surface of the recess with metallic mesh, then by installing a quartz film thickness meter in the recess. CONSTITUTION:An apparatus for measuring film thickness is constituted by forming a recess 8 at a position on a substrate holder 4 which faces to a target 2 arranged in an airtight chamber 1 of an apparatus described in the title, and by installing a quartz film thickness meter 6 in the recess 8, then by attaching a metallic mesh 5 having the same potential as that of the substrate holder 4 to the surface of the recess 8. Hereby, the film thickness meter 6 is hardly affected by the plasma because it is covered with metallic mesh 5, hence it is used similarly as in vacuum vapor deposition. Consequently, the film thickness is controlled during sputtering easily and at a high precision, and the working efficiency is improved.
JP13684979A 1979-10-23 1979-10-23 Sputtering apparatus Pending JPS5662965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13684979A JPS5662965A (en) 1979-10-23 1979-10-23 Sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13684979A JPS5662965A (en) 1979-10-23 1979-10-23 Sputtering apparatus

Publications (1)

Publication Number Publication Date
JPS5662965A true JPS5662965A (en) 1981-05-29

Family

ID=15184933

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13684979A Pending JPS5662965A (en) 1979-10-23 1979-10-23 Sputtering apparatus

Country Status (1)

Country Link
JP (1) JPS5662965A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59118884A (en) * 1982-12-24 1984-07-09 Hitachi Ltd Sputtering device
WO2011134631A1 (en) * 2010-04-29 2011-11-03 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E .V. Method and apparatus for coating rate measurement
CN106567044A (en) * 2015-10-08 2017-04-19 北京北方微电子基地设备工艺研究中心有限责任公司 Film preparation cavity and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59118884A (en) * 1982-12-24 1984-07-09 Hitachi Ltd Sputtering device
WO2011134631A1 (en) * 2010-04-29 2011-11-03 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E .V. Method and apparatus for coating rate measurement
CN106567044A (en) * 2015-10-08 2017-04-19 北京北方微电子基地设备工艺研究中心有限责任公司 Film preparation cavity and method

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