JPS5670636A - Gas plasma etching of transparent conductive film - Google Patents

Gas plasma etching of transparent conductive film

Info

Publication number
JPS5670636A
JPS5670636A JP14652079A JP14652079A JPS5670636A JP S5670636 A JPS5670636 A JP S5670636A JP 14652079 A JP14652079 A JP 14652079A JP 14652079 A JP14652079 A JP 14652079A JP S5670636 A JPS5670636 A JP S5670636A
Authority
JP
Japan
Prior art keywords
transparent conductive
conductive film
gas plasma
base
plasma etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14652079A
Other languages
Japanese (ja)
Other versions
JPS6234138B2 (en
Inventor
Kensaku Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14652079A priority Critical patent/JPS5670636A/en
Publication of JPS5670636A publication Critical patent/JPS5670636A/en
Publication of JPS6234138B2 publication Critical patent/JPS6234138B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

PURPOSE:To obtain accurately a conductive pattern without affecting the base of the pattern by gas plasma etching a transparent conductive film coated on a silicon oxide as a base with BCl3 as reactive gas. CONSTITUTION:The transparent conductive film formed, for example, of SnO2 is coated on the silicon oxide as the base, the BCl3 is supplied under gas pressure of 3X10<-2> Torr or less, and the film is thereby gas plasma etched. Thus, the SnO2 or the like is etched without affecting the silicon oxide of the base by utilizing the difference of etching velocity, thereby obtaining precisely the conductive pattern.
JP14652079A 1979-11-14 1979-11-14 Gas plasma etching of transparent conductive film Granted JPS5670636A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14652079A JPS5670636A (en) 1979-11-14 1979-11-14 Gas plasma etching of transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14652079A JPS5670636A (en) 1979-11-14 1979-11-14 Gas plasma etching of transparent conductive film

Publications (2)

Publication Number Publication Date
JPS5670636A true JPS5670636A (en) 1981-06-12
JPS6234138B2 JPS6234138B2 (en) 1987-07-24

Family

ID=15409501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14652079A Granted JPS5670636A (en) 1979-11-14 1979-11-14 Gas plasma etching of transparent conductive film

Country Status (1)

Country Link
JP (1) JPS5670636A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249209A (en) * 1984-05-24 1985-12-09 科学技術庁無機材質研究所長 Method of forming electronic circuit pattern of tin oxide film
US5607602A (en) * 1995-06-07 1997-03-04 Applied Komatsu Technology, Inc. High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249209A (en) * 1984-05-24 1985-12-09 科学技術庁無機材質研究所長 Method of forming electronic circuit pattern of tin oxide film
JPH0345489B2 (en) * 1984-05-24 1991-07-11 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho
US5607602A (en) * 1995-06-07 1997-03-04 Applied Komatsu Technology, Inc. High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas

Also Published As

Publication number Publication date
JPS6234138B2 (en) 1987-07-24

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