JPS5214600A - Process for the production of a thin film of silicon carbide - Google Patents

Process for the production of a thin film of silicon carbide

Info

Publication number
JPS5214600A
JPS5214600A JP9141675A JP9141675A JPS5214600A JP S5214600 A JPS5214600 A JP S5214600A JP 9141675 A JP9141675 A JP 9141675A JP 9141675 A JP9141675 A JP 9141675A JP S5214600 A JPS5214600 A JP S5214600A
Authority
JP
Japan
Prior art keywords
thin film
silicon carbide
production
thickness
low temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9141675A
Other languages
Japanese (ja)
Other versions
JPS5824371B2 (en
Inventor
Atsuo Senda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP9141675A priority Critical patent/JPS5824371B2/en
Publication of JPS5214600A publication Critical patent/JPS5214600A/en
Publication of JPS5824371B2 publication Critical patent/JPS5824371B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:A thin film several microns or less in thickness of silicon carbide is uniformly deposited and formed at a relatively low temperature of about 300 deg. C by means of glow discharge.
JP9141675A 1975-07-25 1975-07-25 Method for manufacturing silicon carbide thin film Expired JPS5824371B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9141675A JPS5824371B2 (en) 1975-07-25 1975-07-25 Method for manufacturing silicon carbide thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9141675A JPS5824371B2 (en) 1975-07-25 1975-07-25 Method for manufacturing silicon carbide thin film

Publications (2)

Publication Number Publication Date
JPS5214600A true JPS5214600A (en) 1977-02-03
JPS5824371B2 JPS5824371B2 (en) 1983-05-20

Family

ID=14025758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9141675A Expired JPS5824371B2 (en) 1975-07-25 1975-07-25 Method for manufacturing silicon carbide thin film

Country Status (1)

Country Link
JP (1) JPS5824371B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671399A (en) * 1979-11-14 1981-06-13 Mitsubishi Metal Corp Composite layer diaphragm plate for sound converter and its manufacture
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element
JPS57200215A (en) * 1981-06-04 1982-12-08 Kanegafuchi Chem Ind Co Ltd Chemical-resistant protective film having excellent surface hardness
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode
JPH03255459A (en) * 1990-11-16 1991-11-14 Matsushita Electric Ind Co Ltd Production of electrophotographic sensitive body
EP0632145A2 (en) * 1993-07-01 1995-01-04 Dow Corning Corporation Method of forming crystalline silicon carbide coatings

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671399A (en) * 1979-11-14 1981-06-13 Mitsubishi Metal Corp Composite layer diaphragm plate for sound converter and its manufacture
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element
JPS6335025B2 (en) * 1980-02-15 1988-07-13 Matsushita Electric Ind Co Ltd
JPS57200215A (en) * 1981-06-04 1982-12-08 Kanegafuchi Chem Ind Co Ltd Chemical-resistant protective film having excellent surface hardness
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode
JPH0468390B2 (en) * 1982-03-29 1992-11-02 Enaajii Konbaajon Debaisesu Inc
JPH03255459A (en) * 1990-11-16 1991-11-14 Matsushita Electric Ind Co Ltd Production of electrophotographic sensitive body
JPH0541990B2 (en) * 1990-11-16 1993-06-25 Matsushita Electric Ind Co Ltd
EP0632145A2 (en) * 1993-07-01 1995-01-04 Dow Corning Corporation Method of forming crystalline silicon carbide coatings
EP0632145A3 (en) * 1993-07-01 1995-03-29 Dow Corning Method of forming crystalline silicon carbide coatings.
US5465680A (en) * 1993-07-01 1995-11-14 Dow Corning Corporation Method of forming crystalline silicon carbide coatings

Also Published As

Publication number Publication date
JPS5824371B2 (en) 1983-05-20

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