JPS5252570A - Device for production of compound semiconductor - Google Patents

Device for production of compound semiconductor

Info

Publication number
JPS5252570A
JPS5252570A JP12828675A JP12828675A JPS5252570A JP S5252570 A JPS5252570 A JP S5252570A JP 12828675 A JP12828675 A JP 12828675A JP 12828675 A JP12828675 A JP 12828675A JP S5252570 A JPS5252570 A JP S5252570A
Authority
JP
Japan
Prior art keywords
production
compound semiconductor
semiconductor material
holding device
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12828675A
Other languages
Japanese (ja)
Inventor
Noriyuki Shige
Kazutoshi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12828675A priority Critical patent/JPS5252570A/en
Publication of JPS5252570A publication Critical patent/JPS5252570A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: A metal solvent holding device, other semiconductor material holding device and substrate holder are made mutually slidable, whereby the refining of a semiconductor material before growth is made possible, the localized temperature distribution of growth solution is eliminated and crystal of good quality is obtained.
COPYRIGHT: (C)1977,JPO&Japio
JP12828675A 1975-10-27 1975-10-27 Device for production of compound semiconductor Pending JPS5252570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12828675A JPS5252570A (en) 1975-10-27 1975-10-27 Device for production of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12828675A JPS5252570A (en) 1975-10-27 1975-10-27 Device for production of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS5252570A true JPS5252570A (en) 1977-04-27

Family

ID=14981053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12828675A Pending JPS5252570A (en) 1975-10-27 1975-10-27 Device for production of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5252570A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59101823A (en) * 1982-12-03 1984-06-12 Nec Corp Liquid-phase epitaxial growth device
US5334278A (en) * 1991-05-16 1994-08-02 Samsung Electronics Co., Ltd. Liquid-phase epitaxy growth system and method for growing epitaxial layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3690965A (en) * 1971-11-29 1972-09-12 Bell Telephone Labor Inc Semiconductor epitaxial growth from solution
JPS4937569A (en) * 1972-08-09 1974-04-08
JPS50105374A (en) * 1974-01-28 1975-08-20

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3690965A (en) * 1971-11-29 1972-09-12 Bell Telephone Labor Inc Semiconductor epitaxial growth from solution
JPS4937569A (en) * 1972-08-09 1974-04-08
JPS50105374A (en) * 1974-01-28 1975-08-20

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59101823A (en) * 1982-12-03 1984-06-12 Nec Corp Liquid-phase epitaxial growth device
JPH029444B2 (en) * 1982-12-03 1990-03-02 Nippon Electric Co
US5334278A (en) * 1991-05-16 1994-08-02 Samsung Electronics Co., Ltd. Liquid-phase epitaxy growth system and method for growing epitaxial layer
US5482555A (en) * 1991-05-16 1996-01-09 Samsung Electronics Co., Ltd. Liquid-phase epitaxy growth system and method for growing epitaxial layer

Similar Documents

Publication Publication Date Title
JPS523583A (en) Crystal film forming process
JPS51111476A (en) Method of liquid phase epitaxial crystal growth
JPS5252570A (en) Device for production of compound semiconductor
JPS5247673A (en) Process for production of silicon crystal film
JPS5240059A (en) Process for production of semiconductor device
GB2045639B (en) Process for the production of epitaxial layers of semiconductor material on monocrystalline substrates
JPS5219975A (en) Semiconductor device
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS52137432A (en) Purification apparatus for beta-copper phthalocyanine
JPS5227353A (en) Cutting solution of semiconductor material
JPS5261475A (en) Production of silicon crystal film
JPS51140561A (en) Liquid phase epitaxial growing method
JPS5211860A (en) Liquid phase epitaxial device
JPS5249989A (en) Growth method of liquid phase epitaxial
JPS5240070A (en) Process for production of semiconductor device
JPS53100562A (en) Apparatus for separating aligning disk-shaped articles
JPS51123781A (en) A liquid phase crystal growth apparatus
JPS5224166A (en) Process for growth of 3-dimensional compound crystal
JPS53100769A (en) Semiconductor crystal growth apparatus
JPS51145277A (en) Manufacture of silicon crystal substratum
JPS5232890A (en) Method for liquid phase epitaxial growth
JPS5224165A (en) Process for growth of ribbon crystal by horizontal drawing
JPS5289144A (en) Jig for applying liquid substance to turning article
JPS5224167A (en) Process for growth of 3-dimensional compound crystal
JPS5261958A (en) Method and device for liquid phase crystal crowth