JPS56116034A - Photomask - Google Patents

Photomask

Info

Publication number
JPS56116034A
JPS56116034A JP1886080A JP1886080A JPS56116034A JP S56116034 A JPS56116034 A JP S56116034A JP 1886080 A JP1886080 A JP 1886080A JP 1886080 A JP1886080 A JP 1886080A JP S56116034 A JPS56116034 A JP S56116034A
Authority
JP
Japan
Prior art keywords
shielding film
thin shielding
insulation
prevented
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1886080A
Other languages
Japanese (ja)
Other versions
JPS6134671B2 (en
Inventor
Jun Uno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1886080A priority Critical patent/JPS56116034A/en
Publication of JPS56116034A publication Critical patent/JPS56116034A/en
Publication of JPS6134671B2 publication Critical patent/JPS6134671B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

PURPOSE:To prevent breakdown of a thin shielding film accompained with electrostatic charging and discharging such as friction by forming a conductive surfce layer and the thin shielding film on an insulation-characteristic transparent substrate. CONSTITUTION:B, P or As, etc. is implanted through ion implantation into the surface of an insulation-characteristic transparent substrate 1 of quartz, glass or the like, whereby a conductive surface layer 1a of about KOMEGA/ is formed on the surface, on which a thin shielding film 2 by metals (oxides) such as In2O3, SnO or the like is formed by plasma etching, sputter etching, etc. Thereby, the damages in the conductive surface layer at the working of the thin shielding film are prevented and the pattern deformation owing the electrostatic breakdown of the thin shielding film is prevented.
JP1886080A 1980-02-18 1980-02-18 Photomask Granted JPS56116034A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1886080A JPS56116034A (en) 1980-02-18 1980-02-18 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1886080A JPS56116034A (en) 1980-02-18 1980-02-18 Photomask

Publications (2)

Publication Number Publication Date
JPS56116034A true JPS56116034A (en) 1981-09-11
JPS6134671B2 JPS6134671B2 (en) 1986-08-08

Family

ID=11983288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1886080A Granted JPS56116034A (en) 1980-02-18 1980-02-18 Photomask

Country Status (1)

Country Link
JP (1) JPS56116034A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158335A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Metallic photomask
JPS58118647A (en) * 1981-12-30 1983-07-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Irradiation mask
JPS6231853A (en) * 1985-08-03 1987-02-10 Fujitsu Ltd Quartz mask

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158335A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Metallic photomask
JPS6154213B2 (en) * 1980-05-12 1986-11-21 Mitsubishi Electric Corp
JPS58118647A (en) * 1981-12-30 1983-07-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Irradiation mask
JPS6161668B2 (en) * 1981-12-30 1986-12-26 Intaanashonaru Bijinesu Mashiinzu Corp
JPS6231853A (en) * 1985-08-03 1987-02-10 Fujitsu Ltd Quartz mask

Also Published As

Publication number Publication date
JPS6134671B2 (en) 1986-08-08

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