JPS54127598A - Process for fabricating transparent conductive film - Google Patents

Process for fabricating transparent conductive film

Info

Publication number
JPS54127598A
JPS54127598A JP3563478A JP3563478A JPS54127598A JP S54127598 A JPS54127598 A JP S54127598A JP 3563478 A JP3563478 A JP 3563478A JP 3563478 A JP3563478 A JP 3563478A JP S54127598 A JPS54127598 A JP S54127598A
Authority
JP
Japan
Prior art keywords
transparent conductive
conductive film
added
permeability
argon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3563478A
Other languages
Japanese (ja)
Other versions
JPS6215961B2 (en
Inventor
Yutaka Takato
Sadatoshi Takechi
Kozo Yano
Tomio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3563478A priority Critical patent/JPS54127598A/en
Publication of JPS54127598A publication Critical patent/JPS54127598A/en
Publication of JPS6215961B2 publication Critical patent/JPS6215961B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Conductive Materials (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

PURPOSE: To provide the subject process comprising carrying out sputtering of a metal oxide in an atmosphere in which a small quantity of a reducing gas such as H2, a saturated or unsaturated hydrocarbon or the like is added in an inert gas such as argon or the like, thereby to increase photo-permeability and reduce a surface resistance value.
CONSTITUTION: Sputtering of a metal oxide such as In2O3 or the like in which SnO2 is doped is carried out in an atmosphere in which a small quantity of a reducing gas such as H2, saturated or unsaturated hydrocarbon is added in an inert gas such as argon or the like, thereby to form a transparent conductive film. This transparent conductive film has a very small surface resistance RS, and the value of T/RS (T : photo-permeability) becomes large, particularly transparency at the visible light short wavelength side (about 400Å) being excellent. When the quantity of H2 added is above 5%, the permeability decreases. Further, the influence of contaminations due to slight vacuum leakage and residual gas can be evaded, and time of vacuum drawing can be shortened and the adherence speed of the film is also high.
COPYRIGHT: (C)1979,JPO&Japio
JP3563478A 1978-03-27 1978-03-27 Process for fabricating transparent conductive film Granted JPS54127598A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3563478A JPS54127598A (en) 1978-03-27 1978-03-27 Process for fabricating transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3563478A JPS54127598A (en) 1978-03-27 1978-03-27 Process for fabricating transparent conductive film

Publications (2)

Publication Number Publication Date
JPS54127598A true JPS54127598A (en) 1979-10-03
JPS6215961B2 JPS6215961B2 (en) 1987-04-10

Family

ID=12447296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3563478A Granted JPS54127598A (en) 1978-03-27 1978-03-27 Process for fabricating transparent conductive film

Country Status (1)

Country Link
JP (1) JPS54127598A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209009A (en) * 1982-05-28 1983-12-05 株式会社日立製作所 Method of forming transparent conductive film
JPS62190612A (en) * 1986-02-17 1987-08-20 株式会社半導体エネルギー研究所 Manufacture of zinc oxide conductive film
WO2001071054A1 (en) * 2000-03-22 2001-09-27 Pilkington Plc Process for coating glass surfaces
JP2003532997A (en) * 2000-05-12 2003-11-05 ウンアクシス ドイチェランド ゲーエムベーハー Indium-tin oxide (ITO) film and method for producing the same
US7928946B2 (en) 1991-06-14 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP2011091063A (en) * 2011-02-09 2011-05-06 Inst Of Materials Research & Engineering Transparent electrode material which is improved for improvement of performance of oled device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209009A (en) * 1982-05-28 1983-12-05 株式会社日立製作所 Method of forming transparent conductive film
JPH0370327B2 (en) * 1982-05-28 1991-11-07 Hitachi Ltd
JPS62190612A (en) * 1986-02-17 1987-08-20 株式会社半導体エネルギー研究所 Manufacture of zinc oxide conductive film
US7928946B2 (en) 1991-06-14 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
WO2001071054A1 (en) * 2000-03-22 2001-09-27 Pilkington Plc Process for coating glass surfaces
JP2003532997A (en) * 2000-05-12 2003-11-05 ウンアクシス ドイチェランド ゲーエムベーハー Indium-tin oxide (ITO) film and method for producing the same
JP2011091063A (en) * 2011-02-09 2011-05-06 Inst Of Materials Research & Engineering Transparent electrode material which is improved for improvement of performance of oled device

Also Published As

Publication number Publication date
JPS6215961B2 (en) 1987-04-10

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