JPS56150876A - Photovoltaic device - Google Patents

Photovoltaic device

Info

Publication number
JPS56150876A
JPS56150876A JP5496480A JP5496480A JPS56150876A JP S56150876 A JPS56150876 A JP S56150876A JP 5496480 A JP5496480 A JP 5496480A JP 5496480 A JP5496480 A JP 5496480A JP S56150876 A JPS56150876 A JP S56150876A
Authority
JP
Japan
Prior art keywords
layer
type
region
impurity
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5496480A
Other languages
Japanese (ja)
Other versions
JPH0226394B2 (en
Inventor
Yukinori Kuwano
Terutoyo Imai
Michitoshi Onishi
Hidenori Nishiwaki
Shinya Tsuda
Takashi Shibuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP5496480A priority Critical patent/JPS56150876A/en
Publication of JPS56150876A publication Critical patent/JPS56150876A/en
Publication of JPH0226394B2 publication Critical patent/JPH0226394B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve the characteristics of a photovoltaic device by reducing the impurity density of the surface region in which an I-a type Si layer contacts with a P-a type Si layee smaller than that of the other region, thereby suppressing undesired diffusion of the impurity from the P-a type Si layer to the I-a type Si layer. CONSTITUTION:This device is composed of a glass substrate 1, the first transparent electrode film 2, a P-a type Si layer 3, an I-a type Si layer 4, an N<+>-a type Si layer 5 and the second electrode film 6. The layer 3 is composed of a high impurity density region 3a and a low impurity density region 3b. When the boundary between the layer 3 and the film 2 is set as an origin O and the boundary between the layers 3 and 4 is represented by tp, the P type impurity density N1 of the region 3a from the origin O to the tm of the region 3b in the layer 3 is higher than the density N2 of the region 3b from tm to tp as indicated in an impurity density distribution view. According to this density distribution, the diffusion of the impurity from the layer 3 to the layer 4 can be suppressed by sufficiently increasing the value of the N1 to effectively bond it to the layer 4 and sufficiently decreasing the value of the N2.
JP5496480A 1980-04-24 1980-04-24 Photovoltaic device Granted JPS56150876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5496480A JPS56150876A (en) 1980-04-24 1980-04-24 Photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5496480A JPS56150876A (en) 1980-04-24 1980-04-24 Photovoltaic device

Publications (2)

Publication Number Publication Date
JPS56150876A true JPS56150876A (en) 1981-11-21
JPH0226394B2 JPH0226394B2 (en) 1990-06-08

Family

ID=12985339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5496480A Granted JPS56150876A (en) 1980-04-24 1980-04-24 Photovoltaic device

Country Status (1)

Country Link
JP (1) JPS56150876A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3246948A1 (en) * 1982-04-27 1983-10-27 RCA Corp., 10020 New York, N.Y. PHOTOCELL
JPS595679A (en) * 1982-07-01 1984-01-12 Matsushita Electric Ind Co Ltd Photoelectric transducer device
JPS5914679A (en) * 1982-07-16 1984-01-25 Toshiba Corp Photovoltaic device
JPS5996775A (en) * 1982-11-25 1984-06-04 Agency Of Ind Science & Technol Amorphous silicon photoelectric conversion device
JPS59107574A (en) * 1982-12-13 1984-06-21 Agency Of Ind Science & Technol Manufacture of amorphous silicon solar cell
JPS59163876A (en) * 1983-03-08 1984-09-14 Agency Of Ind Science & Technol Amorphous silicon solar cell
JPS6050972A (en) * 1983-08-31 1985-03-22 Agency Of Ind Science & Technol Thin film solar battery
JPS60239068A (en) * 1984-05-11 1985-11-27 Sanyo Electric Co Ltd Photovoltaic device
JPS61222278A (en) * 1985-03-28 1986-10-02 Sanyo Electric Co Ltd Photovoltaic device
JPS6293983A (en) * 1985-10-19 1987-04-30 Sanyo Electric Co Ltd Photovoltaic device
JPS62115785A (en) * 1985-11-14 1987-05-27 Kanegafuchi Chem Ind Co Ltd Semiconductor device
US4692558A (en) * 1983-05-11 1987-09-08 Chronar Corporation Counteraction of semiconductor impurity effects
US4728370A (en) * 1985-08-29 1988-03-01 Sumitomo Electric Industries, Inc. Amorphous photovoltaic elements
JPS63244888A (en) * 1987-03-31 1988-10-12 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JPS63244889A (en) * 1987-03-31 1988-10-12 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JP2004327496A (en) * 2003-04-21 2004-11-18 Asahi Glass Co Ltd Solar battery and its manufacturing method
CN102447000A (en) * 2011-12-14 2012-05-09 杭州赛昂电力有限公司 Thin film solar cell and formation method thereof

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3246948A1 (en) * 1982-04-27 1983-10-27 RCA Corp., 10020 New York, N.Y. PHOTOCELL
JPS58192387A (en) * 1982-04-27 1983-11-09 ア−ルシ−エ−　コ−ポレ−シヨン Photocell
JPH0462186B2 (en) * 1982-04-27 1992-10-05 Rca Corp
JPS595679A (en) * 1982-07-01 1984-01-12 Matsushita Electric Ind Co Ltd Photoelectric transducer device
JPS5914679A (en) * 1982-07-16 1984-01-25 Toshiba Corp Photovoltaic device
JPS5996775A (en) * 1982-11-25 1984-06-04 Agency Of Ind Science & Technol Amorphous silicon photoelectric conversion device
JPS59107574A (en) * 1982-12-13 1984-06-21 Agency Of Ind Science & Technol Manufacture of amorphous silicon solar cell
JPS6310591B2 (en) * 1982-12-13 1988-03-08 Kogyo Gijutsuin
JPS59163876A (en) * 1983-03-08 1984-09-14 Agency Of Ind Science & Technol Amorphous silicon solar cell
US4692558A (en) * 1983-05-11 1987-09-08 Chronar Corporation Counteraction of semiconductor impurity effects
JPH0586677B2 (en) * 1983-08-31 1993-12-13 Kogyo Gijutsuin
JPS6050972A (en) * 1983-08-31 1985-03-22 Agency Of Ind Science & Technol Thin film solar battery
JPS60239068A (en) * 1984-05-11 1985-11-27 Sanyo Electric Co Ltd Photovoltaic device
JPS61222278A (en) * 1985-03-28 1986-10-02 Sanyo Electric Co Ltd Photovoltaic device
US4728370A (en) * 1985-08-29 1988-03-01 Sumitomo Electric Industries, Inc. Amorphous photovoltaic elements
JPS6293983A (en) * 1985-10-19 1987-04-30 Sanyo Electric Co Ltd Photovoltaic device
JPS62115785A (en) * 1985-11-14 1987-05-27 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JPS63244889A (en) * 1987-03-31 1988-10-12 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JPS63244888A (en) * 1987-03-31 1988-10-12 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JP2004327496A (en) * 2003-04-21 2004-11-18 Asahi Glass Co Ltd Solar battery and its manufacturing method
CN102447000A (en) * 2011-12-14 2012-05-09 杭州赛昂电力有限公司 Thin film solar cell and formation method thereof

Also Published As

Publication number Publication date
JPH0226394B2 (en) 1990-06-08

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